Insulated gate algan/gan high electron mobility transistor with multi-channel side gate structure

Abstract

The invention discloses an insulated grid AlGaN / GaN high electron mobility transistor of a multi-channel side grid structure. The insulated grid AlGaN / GaN high electron mobility transistor mainly solves the problems that a multi-channel device is poor in grid control capacity and great in grid electric leakage and a top grid structure device is low in carrier mobility at present. The insulated grid AlGaN / GaN high electron mobility transistor comprises a substrate (1), a first-layer AlGaN / GaN heterojunction (2), an SiN passivation layer (4), insulated grid dielectric layers (5) and source drain grid electrodes, wherein the source drain grid electrodes are positioned on AlGaN layers on two side side layers of the SiN layer respectively. The insulated grid AlGaN / GaN high electron mobility transistor is characterized in that a GaN layer and an AlGaN layer are arranged between the first-layer AlGaN / GaN heterojunction and the SiN layer to form a second-layer AlGaN / GaN heterojunction (3); the top of the SiN layer, the SiN layer as well as the two side walls of the first-layer AlGaN / GaN heterojunction and the second-layer AlGaN / GaN heterojunction are covered with the grid dielectric layers; and the grid dielectric layers are covered with grid electrodes. The device disclosed by the invention is high in grid control capacity, high in carrier mobility, large in saturation current and low in grid electric leakage, and can be used for low noise microwave power devices with short grid length.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the structure and manufacture of semiconductor devices, in particular to an insulated gate AlGaN / GaN high electron mobility transistor with a multi-channel side gate structure, which can be used to manufacture large-scale integrated circuits. Background technique [0002] In recent years, the third-generation wide-bandgap semiconductors represented by SiC and GaN have the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturation electron velocity, and high concentration of two-dimensional electron gas 2DEG at the heterojunction interface. make it receive widespread attention. In theory, high electron mobility transistor HEMT, light emitting diode LED, laser diode LD and other devices made of these materials have obvious superior characteristics than existing devices, so in recent years, researchers at home and abroad have co...

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Problems solved by technology

The transistor uses a high κ dielectric A1 2 o 3 and HfO 2 Although the dielectric gate can significantly reduce the gate leakage current and increase the breakdown voltage of the device, because the transistor adopts an AlGaN / GaN single heterojunction structure, the two-dimensional electron gas density is low, resulting in a small saturation current of the device; at the same time Because the transistor adopts a one-dimensional gate structure, the control ability of the gate to the channel is weak. When the channel length is very short, short channel effect is prone to occur, resulting in a large off-state leakage current of the device.

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