Dielectric material for hydrogen sensor core, hydrogen sensor core and preparation method and application thereof
A sensor core and dielectric material technology, applied in the field of sensors, can solve the problems of reducing the long-term stability and reliability of materials, low hydrogen detection sensitivity, complex preparation, etc., and achieve low raw material and preparation costs, low material and processing costs, The effect of simple preparation process
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Example Embodiment
[0036] Example 1:
[0037] A medium material for a core body of a hydrogen sensor, the medium material is amorphous carbon.
[0038] In this embodiment, the amorphous carbon is N-doped amorphous carbon.
[0039] In this embodiment, the atomic percentage of N in the N-doped amorphous carbon is 3.68%.
Example Embodiment
[0040] Example 2
[0041] like figure 1 As shown, the hydrogen sensor core of this embodiment includes a substrate, a dielectric layer and a hydrogen sensitive layer in sequence, and the dielectric layer is an N-doped amorphous carbon film formed from the dielectric material for the hydrogen sensor core of Embodiment 1.
[0042] In this embodiment, the thickness of the N-doped amorphous carbon film is 90 nm.
[0043] In this embodiment, the substrate is a phosphorus-doped N-type silicon wafer.
[0044] In this embodiment, the resistivity of the phosphorus-doped N-type silicon substrate is 3Ω·cm˜6Ω·cm.
[0045] In this embodiment, the hydrogen sensitive layer is a palladium-chromium alloy thin film, wherein chromium accounts for 18.3 wt % and palladium accounts for 81.7 wt %.
[0046] In this embodiment, the thickness of the palladium-chromium alloy thin film is 30 nm.
[0047] figure 2 The preparation method of the hydrogen sensor core of the present invention is shown, ...
Example Embodiment
[0056] Example 3
[0057] like figure 1 As shown, the hydrogen sensor core of this embodiment includes a substrate, a dielectric layer and a hydrogen sensitive layer in sequence, and the dielectric layer is an N-doped amorphous carbon film formed from the dielectric material for the hydrogen sensor core of Embodiment 1.
[0058] In this embodiment, the thickness of the N-doped amorphous carbon film is 90 nm.
[0059] In this embodiment, the substrate is a phosphorus-doped N-type silicon wafer.
[0060] In this embodiment, the resistivity of the phosphorus-doped N-type silicon substrate is 3Ω·cm˜6Ω·cm.
[0061] In this embodiment, the hydrogen sensitive layer is a palladium-chromium alloy thin film, wherein chromium accounts for 18.3 wt % and palladium accounts for 81.7 wt %.
[0062] In this embodiment, the thickness of the palladium-chromium alloy thin film is 30 nm.
[0063] The preparation method of the hydrogen sensor core body of this embodiment includes the followi...
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