Dielectric material for hydrogen sensor core, hydrogen sensor core and preparation method and application thereof

A sensor core and dielectric material technology, applied in the field of sensors, can solve the problems of reducing the long-term stability and reliability of materials, low hydrogen detection sensitivity, complex preparation, etc., and achieve low raw material and preparation costs, low material and processing costs, The effect of simple preparation process

Active Publication Date: 2016-03-23
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of the research on the dielectric layer in the MOS capacitive hydrogen sensor is limited to oxide materials. The lower limit of the hydrogen concentration of the MOS capacitive hydrogen sensor using ordinary oxides as the dielectric layer is generally only a few tens of ppm, and hydrogen detection sensitivity is low
And defects such as oxygen vacancies, interstitial ox

Method used

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  • Dielectric material for hydrogen sensor core, hydrogen sensor core and preparation method and application thereof
  • Dielectric material for hydrogen sensor core, hydrogen sensor core and preparation method and application thereof
  • Dielectric material for hydrogen sensor core, hydrogen sensor core and preparation method and application thereof

Examples

Experimental program
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Example Embodiment

[0036] Example 1:

[0037] A medium material for a core body of a hydrogen sensor, the medium material is amorphous carbon.

[0038] In this embodiment, the amorphous carbon is N-doped amorphous carbon.

[0039] In this embodiment, the atomic percentage of N in the N-doped amorphous carbon is 3.68%.

Example Embodiment

[0040] Example 2

[0041] like figure 1 As shown, the hydrogen sensor core of this embodiment includes a substrate, a dielectric layer and a hydrogen sensitive layer in sequence, and the dielectric layer is an N-doped amorphous carbon film formed from the dielectric material for the hydrogen sensor core of Embodiment 1.

[0042] In this embodiment, the thickness of the N-doped amorphous carbon film is 90 nm.

[0043] In this embodiment, the substrate is a phosphorus-doped N-type silicon wafer.

[0044] In this embodiment, the resistivity of the phosphorus-doped N-type silicon substrate is 3Ω·cm˜6Ω·cm.

[0045] In this embodiment, the hydrogen sensitive layer is a palladium-chromium alloy thin film, wherein chromium accounts for 18.3 wt % and palladium accounts for 81.7 wt %.

[0046] In this embodiment, the thickness of the palladium-chromium alloy thin film is 30 nm.

[0047] figure 2 The preparation method of the hydrogen sensor core of the present invention is shown, ...

Example Embodiment

[0056] Example 3

[0057] like figure 1 As shown, the hydrogen sensor core of this embodiment includes a substrate, a dielectric layer and a hydrogen sensitive layer in sequence, and the dielectric layer is an N-doped amorphous carbon film formed from the dielectric material for the hydrogen sensor core of Embodiment 1.

[0058] In this embodiment, the thickness of the N-doped amorphous carbon film is 90 nm.

[0059] In this embodiment, the substrate is a phosphorus-doped N-type silicon wafer.

[0060] In this embodiment, the resistivity of the phosphorus-doped N-type silicon substrate is 3Ω·cm˜6Ω·cm.

[0061] In this embodiment, the hydrogen sensitive layer is a palladium-chromium alloy thin film, wherein chromium accounts for 18.3 wt % and palladium accounts for 81.7 wt %.

[0062] In this embodiment, the thickness of the palladium-chromium alloy thin film is 30 nm.

[0063] The preparation method of the hydrogen sensor core body of this embodiment includes the followi...

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Abstract

The invention discloses a dielectric material for a hydrogen sensor core, the hydrogen sensor core and a preparation method and application thereof. The dielectric material for the hydrogen sensor core is amorphous carbon; the hydrogen sensor core comprises a substrate, a dielectric layer formed by amorphous carbon and a hydrogen sensitive layer successively. The preparation method comprises the following steps: (1) firstly cleaning the substrate surface, and then removing a natural oxidation layer on the substrate surface; (2) preparing an amorphous carbon thin film on the substrate treated in the step (1); (3) preparing the hydrogen sensitive layer on the surface of the amorphous carbon thin film. The amorphous carbon has simple components, is steady in chemical property, and is particularly suitable for preparing electronic devices with high stability and long service life. The lower limit of detection of hydrogen by the MOS capacitive film hydrogen sensor prepared from the hydrogen sensor core can reach 10ppm, and the response time and dehydrogenation time are less than 25s. The preparation method of the hydrogen sensor core is simple in process and low in material and process cost.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a dielectric material for a hydrogen sensor core, and also relates to a hydrogen sensor core and a preparation method and application thereof. Background technique [0002] Hydrogen has a wide range of uses, not only widely used in the booster systems of aerospace, vehicles and ships, but also as an important reducing gas and carrier gas, it also plays an extremely important role in chemical, electronic, medical and other fields. effect. Hydrogen is colorless, tasteless, odorless, and transparent. It is easy to leak and difficult to detect during production, storage, transportation, and use. When the content in the air is between 4-75%, it will explode when exposed to open flames. Therefore, the hydrogen sensor used to detect the concentration of hydrogen in the environment has attracted more and more attention and attention. [0003] At present, there are few types...

Claims

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Application Information

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IPC IPC(8): G01N27/22
CPCG01N27/227
Inventor 陈浩谢贵久陈伟白庆星龚星
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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