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Method for reducing thickness of hexagonal boron nitride two-dimensional thin film

A technology of hexagonal boron nitride and film thickness, applied in the field of materials, can solve the problems of small size of boron nitride single crystal crystal domain, poor quality of boron nitride film, uncontrollable film thickness, etc., so as to reduce thickness and improve quality. Effect

Active Publication Date: 2016-06-08
江苏中商碳素研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although hexagonal boron nitride can be prepared by CVD method, the quality of boron nitride film is poor at present, and the size of boron nitride single crystal domain is small
Boron nitride CVD growth is usually a layer-island mixed growth mode, which has the disadvantage that the thickness of the grown film cannot be controlled, and granular boron nitride grows on the surface of the film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Step (1). The copper sheet (3cmx2cmx0.05cm) is soaked with hydrochloric acid with a concentration of 0.5mol / L for 10 seconds, cleaned with deionized water and dried with nitrogen, and put into the quartz tube of the electric furnace;

[0019] Step (2). The mixed gas of argon and hydrogen is continuously fed into the quartz tube, the flow ratio of argon and hydrogen is 1:2, and the temperature of the electric furnace is raised to 900°C and then kept for 30 minutes;

[0020] Step (3). Simultaneously feed borazine vapor into the quartz tube, and turn off borazine vapor after 20 minutes. The boramine vapor introduced is obtained by heating in a water bath, and the temperature of the water bath is 40°C.

[0021] Step (4). Stop heating the electric furnace, cool the quartz tube to normal temperature at a cooling rate of 20° C. / min, then turn off hydrogen and argon, and take out the copper sheet.

[0022] Step (5). The copper sheet is taken out, and the PMMA solution is spin-...

Embodiment 2

[0025] Step (1). The copper sheet is soaked with hydrochloric acid of 0.6mol / L for 9 seconds, cleaned with deionized water, dried with nitrogen, and put into the quartz tube of the electric furnace;

[0026] Step (2). Continuously feed a mixture of argon and hydrogen into the quartz tube. The flow ratio of argon to hydrogen is 15:10. Raise the temperature of the electric furnace to 1000° C. and keep it warm for 20 minutes.

[0027] Step (3). Simultaneously feed boramine vapor into the quartz tube, and after 30 minutes, close the feed of boramine vapor; the introduced boramine vapor is obtained by heating in a water bath, and the temperature of the water bath is 100°C.

[0028] Step (4). Stop heating the electric furnace, cool the quartz tube to normal temperature at a cooling rate of 30° C. / min, then shut down and feed hydrogen and argon, and take out the copper sheet.

[0029] Step (5). The copper sheet is taken out, and the PMMA solution is spin-coated on the upper surface o...

Embodiment 3

[0032] Step (1). The copper sheet is soaked with hydrochloric acid with a concentration of 1.5mol / L for 5 seconds, cleaned with deionized water, dried with nitrogen, and put into the quartz tube of the electric furnace;

[0033] Step (2). Continuously feed the mixed gas of argon and hydrogen into the quartz tube. The flow ratio of argon to hydrogen is 3:2. Raise the temperature of the electric furnace to 950°C and keep it warm for 5 minutes.

[0034] Step (3). Simultaneously feed borazine vapor into the quartz tube, and then close and feed borazine vapor after 25 minutes. The boramine vapor introduced is obtained by heating in a water bath, and the temperature of the water bath is 60°C.

[0035] Step (4). Stop heating the electric furnace, cool the quartz tube to normal temperature at a cooling rate of 25° C. / min, then turn off hydrogen and argon, and take out the copper sheet.

[0036] Step (5). The copper sheet is taken out, and the PMMA solution is spin-coated on the lower...

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Abstract

The invention relates to a method for reducing the thickness of a hexagonal boron nitride two-dimensional thin film. At present, a hexagonal boron nitride atomic layer thin film can grow through a chemical vapor deposition method, but growth quality of the hexagonal boron nitride atomic layer thin film is not high, for example, the domain size of single crystals is small and scattered boron nitride particles or continuous granular films exist on the surface layer of the thin film, and performance and application of boron nitride thin films are affected. According to the method, a boron nitride thin film is synthesized first through the chemical vapor deposition method, then particles in the surface layer of the thin film are removed through heat treatment in different atmospheres, and the high-quality hexagonal boron nitride two-dimensional thin film with the thickness being reduced is obtained. The method is beneficial to reduction of the thickness of the boron nitride thin film and improvement of quality of the thin film.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a method for preparing a boron nitride atomic layer thin film. Background technique [0002] Since graphene was first prepared by mechanical exfoliation in 2004, the world has set off a wave of research on graphene and other two-dimensional (2D) materials, and has successfully prepared a variety of 2D materials, such as molybdenum sulfide, lithium cobalt oxide, silicene, germanium ene, arsenene and antimonene, etc. Hexagonal boron nitride h-BN is also a two-dimensional material similar in structure to graphene, with high thermal conductivity comparable to graphene; higher chemical stability than graphene, in air, 1000 ° C does not oxidize, while graphene 600 Oxidation occurs at ℃; h-BN is an insulator with a dielectric constant of 3-4 and a breakdown voltage of 0.7V / nm, which is close to silicon oxide. It is a very good substrate material for graphene. Compared with silicon ...

Claims

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Application Information

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IPC IPC(8): C23C16/34
CPCC23C16/342
Inventor 赵士超张琪吕燕飞金圣忠
Owner 江苏中商碳素研究院有限公司
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