Method for reducing thickness of hexagonal boron nitride two-dimensional thin film

A technology of hexagonal boron nitride and film thickness, applied in the field of materials, can solve the problems of small size of boron nitride single crystal crystal domain, poor quality of boron nitride film, uncontrollable film thickness, etc., so as to reduce thickness and improve quality. Effect

Active Publication Date: 2016-06-08
江苏中商碳素研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although hexagonal boron nitride can be prepared by CVD method, the quality of boron nitride film is poor at present, and the size of boron nitride single crystal domain is small
Boron nitride CVD g

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0017] Example 1:

[0018] Step (1). The copper sheet (3cmx2cmx0.05cm) was immersed in hydrochloric acid with a concentration of 0.5 mol / L for 10 seconds, washed with deionized water and dried with nitrogen, and placed in the quartz tube of the electric furnace;

[0019] Step (2). A mixture of argon and hydrogen is continuously fed into the quartz tube, the flow ratio of argon to hydrogen is 1:2, the temperature of the electric furnace is raised to 900°C and the temperature is kept for 30 minutes;

[0020] Step (3). Simultaneously pass borazane vapor into the quartz tube, turn off borazane vapor after 20 minutes. The borazane vapor passed in is obtained by heating in a water bath with a temperature of 40°C.

[0021] Step (4). The heating of the electric furnace is stopped, the quartz tube is cooled to normal temperature at a cooling rate of 20° C. / min, and then hydrogen and argon are turned off, and the copper sheet is taken out.

[0022] Step (5). Take out the copper sheet, spin-coat ...

Example Embodiment

[0024] Example 2:

[0025] Step (1). The copper sheet was immersed in hydrochloric acid with a concentration of 0.6 mol / L for 9 seconds, washed with deionized water and dried with nitrogen, and placed in the quartz tube of the electric furnace;

[0026] Step (2). A mixture of argon and hydrogen is continuously fed into the quartz tube. The flow ratio of argon to hydrogen is 15:10. The temperature of the electric furnace is raised to 1000° C. and the temperature is kept for 20 minutes.

[0027] Step (3). Simultaneously pass borazane vapor into the quartz tube, turn off borazane vapor after 30 minutes; the passed borazane vapor is obtained by heating in a water bath with a temperature of 100°C.

[0028] Step (4). The heating of the electric furnace is stopped, the quartz tube is cooled to normal temperature at a cooling rate of 30° C. / min, and then hydrogen and argon are turned off, and the copper sheet is taken out.

[0029] Step (5). Take out the copper sheet, spin-coated PMMA solution ...

Example Embodiment

[0031] Example 3:

[0032] Step (1). The copper sheet is immersed in hydrochloric acid with a concentration of 1.5 mol / L for 5 seconds, washed with deionized water and dried with nitrogen, and placed in the quartz tube of the electric furnace;

[0033] Step (2). A mixture of argon and hydrogen is continuously fed into the quartz tube. The flow ratio of argon to hydrogen is 3:2. The temperature of the electric furnace is raised to 950°C and the temperature is maintained for 5 minutes.

[0034] Step (3). Simultaneously pass borazane vapor into the quartz tube, turn off borazane vapor after 25 minutes. The borazane vapor passed in is obtained by heating in a water bath with a temperature of 60°C.

[0035] Step (4). The heating of the electric furnace is stopped, the quartz tube is cooled to normal temperature at a cooling rate of 25° C. / min, and then hydrogen and argon are turned off, and the copper sheet is taken out.

[0036] Step (5). Take out the copper sheet, spin-coat PMMA solution ...

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Abstract

The invention relates to a method for reducing the thickness of a hexagonal boron nitride two-dimensional thin film. At present, a hexagonal boron nitride atomic layer thin film can grow through a chemical vapor deposition method, but growth quality of the hexagonal boron nitride atomic layer thin film is not high, for example, the domain size of single crystals is small and scattered boron nitride particles or continuous granular films exist on the surface layer of the thin film, and performance and application of boron nitride thin films are affected. According to the method, a boron nitride thin film is synthesized first through the chemical vapor deposition method, then particles in the surface layer of the thin film are removed through heat treatment in different atmospheres, and the high-quality hexagonal boron nitride two-dimensional thin film with the thickness being reduced is obtained. The method is beneficial to reduction of the thickness of the boron nitride thin film and improvement of quality of the thin film.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a method for preparing a boron nitride atomic layer thin film. Background technique [0002] Since graphene was first prepared by mechanical exfoliation in 2004, the world has set off a wave of research on graphene and other two-dimensional (2D) materials, and has successfully prepared a variety of 2D materials, such as molybdenum sulfide, lithium cobalt oxide, silicene, germanium ene, arsenene and antimonene, etc. Hexagonal boron nitride h-BN is also a two-dimensional material similar in structure to graphene, with high thermal conductivity comparable to graphene; higher chemical stability than graphene, in air, 1000 ° C does not oxidize, while graphene 600 Oxidation occurs at ℃; h-BN is an insulator with a dielectric constant of 3-4 and a breakdown voltage of 0.7V / nm, which is close to silicon oxide. It is a very good substrate material for graphene. Compared with silicon ...

Claims

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Application Information

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IPC IPC(8): C23C16/34
CPCC23C16/342
Inventor 赵士超张琪吕燕飞金圣忠
Owner 江苏中商碳素研究院有限公司
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