A method for preparing niobium oxide target material by hot isostatic pressing

A technology of hot isostatic pressing and niobium oxide, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of long production cycle and high production cost of powder treatment, and increase material utilization and production. Efficiency, shrinkage reduction, production cost reduction effect

Active Publication Date: 2019-01-15
AEROSPACE RES INST OF MATERIAL & PROCESSING TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method needs to keep the powder in a hydrogen atmosphere, the powder processing production cycle is long, and the production cost is high

Method used

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  • A method for preparing niobium oxide target material by hot isostatic pressing
  • A method for preparing niobium oxide target material by hot isostatic pressing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The niobium pentoxide powder with a purity of 99.99% was weighed and subjected to cold isostatic pressing and crushing. The cold isostatic pressing pressure was 240 MPa, and the holding time was 50 minutes. Put the obtained niobium pentoxide powder into the sheath, the relative tap density is 52%, and carry out vacuum thermal degassing after welding. The vacuum thermal degassing process is the final degassing temperature of 900 ° C, and the final vacuum degree is greater than 1×10 -3 Pa, keep warm for 180min on this basis. The oxygen loss was 4 wt% of the total oxygen content in the powder. The jacket after vacuum heat degassing is subjected to hot isostatic pressing densification treatment. The process parameters of hot isostatic pressing are: temperature 1000°C, pressure 140MPa, holding time 3h. After testing, the density of the niobium oxide target is 4.54g / cm 3 , the resistivity is 4.6×10 -4 Ω.cm.

Embodiment 2

[0037] The niobium pentoxide powder with a purity of 99.99% was weighed and subjected to cold isostatic pressing and crushing. The cold isostatic pressing pressure was 180 MPa, and the holding time was 40 minutes. The obtained niobium pentoxide powder is loaded into the sheath, the relative density of vibration is 54%, and vacuum heat degassing is carried out after welding. The vacuum thermal degassing process is the final degassing temperature of 850°C, and the final vacuum degree is greater than 1×10 -3 Pa, keep warm for 80min on this basis. The oxygen loss was 4.6 wt% of the total oxygen content in the powder. The jacket after vacuum heat degassing is subjected to hot isostatic pressing densification treatment. The process parameters of hot isostatic pressing are: temperature 900°C, pressure 100MPa, holding time 4h. After testing, the density of the niobium oxide target is 4.52g / cm 3 , the resistivity is 2.8×10 -4 Ω.cm.

Embodiment 3

[0039] The niobium pentoxide powder with a purity of 99.99% was weighed and subjected to cold isostatic pressing and crushing. The cold isostatic pressing pressure was 200 MPa, and the holding time was 60 minutes. The obtained niobium pentoxide powder is loaded into the sheath, the relative density of vibration is 51%, and vacuum heat degassing is carried out after welding. The vacuum thermal degassing process is the final degassing temperature of 750 °C, and the final vacuum degree is greater than 1×10 -3 Pa, keep warm for 240min on this basis. The oxygen loss is about 3.7wt% of the total oxygen content in the powder. The jacket after vacuum heat degassing is subjected to hot isostatic pressing densification treatment. The process parameters of hot isostatic pressing are: temperature 950°C, pressure 130MPa, holding time 2h. After testing, the density of the niobium oxide target is 4.51g / cm 3 , the resistivity is 2.1×10 -4 Ω.cm.

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Abstract

The invention provides a method for preparing a hot isostatic pressing niobium oxide target material for a sputter coating. By means of the method, high-purity niobium pentoxide powder serves as a raw material, and the purity of the niobium pentoxide powder is not lower than 99.99%; the powder is packaged into a packaging sleeve after being pretreated; then vacuum thermal degassing is conducted on the powder, and the powder is pressed and molded in a hot isostatic pressing machine; and afterwards, a finished product is manufactured through machining. The niobium oxide target material prepared through the method has the beneficial effects that the density of the target material is high, and the density can reach 4.5 g / cm<3> or higher; and conductivity is good, the specific resistivity ranges from 2*10<-4> omega.cm to 5*10<-4> omega.cm, and the requirement for manufacturing niobium oxide films through an intermediate-frequency or direct current sputtering technology can be met.

Description

technical field [0001] The invention relates to the field of target material preparation for sputtering coating, in particular to a method for preparing a hot isostatic pressing niobium oxide target material. Background technique [0002] Niobium pentoxide thin film has high transmittance to visible light, and can be applied in liquid crystal display (LCD), plasma display (PDP), touch screen (Touch Panel), electroluminescent display (LED), thin film solar cells, optical lenses, etc. aspect. [0003] Niobium pentoxide target is an important material for the preparation of AR glass (anti-reflection and anti-reflection glass) and ITO glass (touch screen glass). AR glass is coated with Nb2O5 film and SiO on the glass surface by using sputtering coating technology. 2 Film, glass + high refractive film (Nb 2 o 5 film) + low refractive film (SiO 2 Thin film) has an anti-reflection effect, and each additional layer of high-refraction film + low-refraction film can increase the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C04B35/495C04B35/645
CPCC04B35/495C04B35/6455C23C14/3414
Inventor 崔子振谢飞石刚黄国基赵鹏飞
Owner AEROSPACE RES INST OF MATERIAL & PROCESSING TECH
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