Thin-film solar cell module and preparation method thereof

Abstract

The invention provides a thin-film solar cell module and a preparation method thereof. The thin-film solar cell module comprises a substrate, a back electrode layer, a semiconductor layer, a transparent conductive layer and grooves P1, P2 and P3, wherein the groove P1 is filled with a semiconductor layer material; the side walls and the bottom part of the groove P2 are covered with a high-resistance material film layer; the groove P2 is filled with a conductive material; the high-resistance material film layer is located between the side walls and / or the bottom part of the groove P2 and the transparent conductive layer; the upper part and / or the lower part of the transparent conductive layer are filled with the conductive material; the conductive material is prepared from resin or ink containing conductive particles; and the conductive particles comprise silver, aluminum, titanium, copper, molybdenum, carbon or alloys thereof and the like. The performance of the thin-film solar cell module can be improved.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a CIGS-based thin-film solar cell component and a preparation method thereof. Background technique [0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a P-type semiconductor material with a direct band gap, and its absorption coefficient is as high as 105 / cm, and a 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of the CIGS thin film is continuously adjustable from 1...

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Problems solved by technology

[0004] The situation is different when the transparent conductive layer covers the sidewall and bottom of the P2 trench. Due to the deposition effect of the film layer, the thickness of the transparent conductive layer deposited on the sidewall of the P2 trench is relatively thin, which causes the area The resistance of the film layer is high, which will increase the series resistance of the thin film solar cell module, thereby affecting the performance of the thin film solar cell module

[0005] Furthermore, on the sidewall of the P2 groove, the material of the transparent conductive layer is directly in contact with the material of the light absorbing layer of CuInGaSe; at the bottom of the groove of P2, the material of the transparent conductive layer is directly in contact with the material of the back electrode layer; Both the CIGS light-absorbing layer material and the back electrode layer material contain alkali metal elements. If the transparent conductive layer is in direct contact with it, the alkali metal will easily diffuse into the transparent conductive layer in this area, which will cause the The performance of the regional transparent conductive layer deteriorates (such as increased resistance, etc.), which in turn reduces the performance of thin-film solar cell modules

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