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A kind of niobium-doped tin dioxide transparent conductive film and preparation method thereof

A technology of transparent conductive film and tin dioxide, which is applied in the preparation of niobium-doped tin dioxide transparent conductive film, in the field of niobium-doped tin dioxide transparent conductive film, which can solve the problem of difficult control of preparation technology, difficult guarantee of photoelectric performance, TCO Complicated components and other issues, to achieve good chemical stability, excellent photoelectric performance, and superior photoelectric performance

Active Publication Date: 2019-03-08
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The foregoing raises concerns about the inclusion of SnO 2 TCO materials that are multi-element doped with multi-element oxides, but the composition of these multi-element oxides is complex, the cost is high, the preparation technology is not easy to control, and the photoelectric performance is not easy to guarantee, so it cannot be used in actual production.

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  • A kind of niobium-doped tin dioxide transparent conductive film and preparation method thereof
  • A kind of niobium-doped tin dioxide transparent conductive film and preparation method thereof
  • A kind of niobium-doped tin dioxide transparent conductive film and preparation method thereof

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Embodiment 1

[0048] The niobium-doped tin dioxide transparent conductive film of the present embodiment is composed of the following atomic percentages: O66.94%, and the rest are Nb and Sn (the total atomic number of Nb, Sn and O is 100%); wherein , the number of atoms of Nb is 5% of the total number of atoms of Nb and Sn.

[0049] The preparation method of the niobium-doped tin dioxide transparent conductive film of the present embodiment comprises the following steps:

[0050] 1) Argon is used as the plasma gas source, oxygen is used as the reaction gas, and the remote plasma sputtering technology is used to deposit the thin film on the glass substrate by reactive sputtering, specifically:

[0051] Fix the cleaned glass substrate on the sample stage in the sputtering chamber of the remote plasma sputtering system; before reactive sputtering, evacuate the sputtering chamber to a vacuum degree better than 2.0×10 -3 Pa, then feed the argon gas with a flow rate of 70 sccm into the chamber, ...

Embodiment 2

[0059] The niobium-doped tin dioxide transparent conductive film of the present embodiment is composed of the following atomic percentages: O67.00%, and the rest are Nb and Sn (the total atomic number of Nb, Sn and O is 100%); wherein , the number of atoms of Nb is 6% of the total number of atoms of Nb and Sn.

[0060] The preparation method of the niobium-doped tin dioxide transparent conductive film of the present embodiment comprises the following steps:

[0061] 1) Argon is used as the plasma gas source, oxygen is used as the reaction gas, and the remote plasma sputtering technology is used to deposit the thin film on the glass substrate by reactive sputtering, specifically:

[0062] Fix the cleaned glass substrate on the sample stage in the sputtering chamber of the remote plasma sputtering system; before reactive sputtering, evacuate the sputtering chamber to a vacuum degree better than 2.0×10 -3 Pa, then feed the argon gas with a flow rate of 200 sccm into the chamber,...

Embodiment 3

[0073] The niobium-doped tin dioxide transparent conductive film of the present embodiment is composed of the following atomic percentages: O67.00%, and the rest are Nb and Sn (the total atomic number of Nb, Sn and O is 100%); wherein , the number of atoms of Nb is 6% of the total number of atoms of Nb and Sn.

[0074] The preparation method of the niobium-doped tin dioxide transparent conductive film of the present embodiment comprises the following steps:

[0075] 1) With argon as the plasma gas source and oxygen as the reactive gas, the remote plasma sputtering technology was used to deposit thin films on transparent plastic (polyethylene naphthalate, PEN) substrates by reactive sputtering, specifically for:

[0076] Fix the cleaned glass substrate on the sample stage in the sputtering chamber of the remote plasma sputtering system; before reactive sputtering, evacuate the sputtering chamber to a vacuum degree better than 2.0×10 -3 Pa, then feed the argon gas with a flow ...

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Abstract

The invention discloses a niobium-doped tin dioxide transparent electric conducting film and a preparation method thereof. The niobium-doped tin dioxide transparent electric conducting film consists of the following components in percentage by atomic number: 63-70% of O, and the balance of Nb and Sn, wherein the atomic number of Nb is 1-9% of the total atomic number of Nb and Sn. The transparent electric conducting film is sputtered and deposited on a substrate by a far source plasma sputtering technology. The carrier mobility of the transparent electric conducting film is high up to 18 cm 2 V-1 s-1; the transmittance to visible light is above 85%; the resistivity is lower to 10-4 omega.cm; and the transparent electric conducting film is transparent in near ultraviolet and visual light range, can be widely applied to solar batteries and transparent photoelectric devices, is excellent in photoelectric performance, simple in components, rich in raw materials, controllable in preparation process and environment-friendly, largely saves the production cost and time, is suitable for flexible photoelectric and photovoltaic devices, and is broad in application prospect.

Description

technical field [0001] The invention belongs to the technical field of transparent conductive oxide thin films, specifically relates to a niobium-doped tin dioxide transparent conductive film, and also relates to a preparation method of the niobium-doped tin dioxide transparent conductive film. Background technique [0002] Transparent conductive oxides (transparent conductive oxides, referred to as TCOs) are a class of widely used semiconductor functional materials, mainly including oxides of In, Sn, Zn and Cd and their composite multi-element oxide thin film materials, which have a band gap and visible spectrum region Common optoelectronic characteristics such as high light transmittance and low resistivity, as transparent electrodes of optoelectronic devices, are widely used in flat panel display devices, touch panels, solar photovoltaic cells, reflective thermal mirrors, gas sensitive devices, special function window coatings, transparent PN junction and optoelectronics,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/46C23C14/58
CPCC23C14/0036C23C14/08C23C14/46C23C14/5806
Inventor 邵国胜胡俊华郭美澜宋安刚韩小平
Owner ZHENGZHOU UNIV