A method of manufacturing a diamond heat sink based LED
A production method and diamond technology, which are applied in electrical components, circuits, semiconductor devices, etc., to achieve the effects of easy implementation, excellent heat dissipation, and damage avoidance
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Embodiment 1
[0061] The sapphire substrate GaN-based LED epitaxial material described in Embodiment 1 is as figure 1 , sapphire substrate 1 single-sided polishing, thickness 500 μm, intrinsic GaN buffer layer 2 thickness 50 nm, n-GaN layer 3 thickness 2 μm, 10 pairs of GaN / InGaN quantum wells 4, p-GaN layer 5 thickness 0.2 μm, Example 1 It is mainly the epitaxial growth of GaN-based LED epitaxial materials on the sapphire substrate, including the following steps:
[0062] (1) The sapphire substrate 1 is cleaned, and ultrasonicated with acetone and deionized water for 2 minutes each.
[0063] (2) Put the sapphire substrate 1 at 1000°C in H 2 Baking is carried out under the atmosphere to remove surface adsorption impurities.
[0064] (3) with trimethylgallium (TMGa) and ammonia (NH 3 ) as Ga source and N source respectively, N 2 and H 2 As a carrier gas, a 50nm GaN buffer layer 2 is grown on a sapphire substrate at a low temperature by using MOCVD technology at 530°C.
[0065] (4) foll...
Embodiment 2
[0069] Schematic diagram of peeling off the substrate of the sapphire substrate GaN-based LED epitaxial material described in Embodiment 2, as shown in figure 2 , image 3 , Figure 4 , the temporary support material of the device is a wafer with (111) crystal orientation Si, and the scanning laser adopts a KrF pulse laser with a wavelength of 248nm and a pulse width of 38ns. Embodiment 2 is mainly used to complete the stripping of the sapphire substrate, comprising the following steps:
[0070] (1) Take a Si (111) wafer as the Si temporary support material 6, and use an adhesive to temporarily reverse the GaN-based LED epitaxial material on the sapphire substrate onto the Si support material to form a sapphire / GaN-based LED epitaxial material / Si three-layer structure;
[0071] (2) Use a KrF pulse laser with a wavelength of 248nm and a pulse width of 38ns to scan the entire sample from the sapphire side; the energy density of the laser pulse can be adjusted by a quartz le...
Embodiment 3
[0074] In Embodiment 3, the sapphire substrate GaN-based LED epitaxial material is bonded with the diamond heat sink substrate 8 adhesive, as Figure 5 , Figure 6 , Figure 7 , The diamond is polycrystalline diamond with a thickness of 0.3mm, the binder is benzocyclobutene (BCB), the bonding time is 30min, and the bonding and curing temperature is lower than 150°C. Embodiment 3 mainly uses adhesive low-temperature bonding technology to complete the low-temperature bonding of GaNHEMTs power devices and diamond heat sink substrates, including the following steps:
[0075] (1) The intrinsic GaN buffer layer 2 is removed with a KOH:ethylene glycol=5:3 solution, and the n-GaN layer 3 is leaked out.
[0076] (2) etching and polishing the exposed n-GaN layer 3, polishing to nano-scale surface roughness, preparing for wafer bonding, and simultaneously polishing the diamond heat sink;
[0077] (3) Polish and deposit a thin layer of bonding adhesive benzocyclobutene (BCB) 7 on the s...
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