Preparation method of zinc oxide/antimony tin oxide composite nano-material

A technology of composite nanomaterials and tin antimony oxide, applied in metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, chemical/physical processes, etc., can solve the problem of easy recombination and loss of catalysis problems such as activity, to achieve the effect of easy operation control, low preparation cost and high product purity

Inactive Publication Date: 2016-08-17
BOHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if there are no suitable active/reactive sites on the surface of the semiconductor c

Method used

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  • Preparation method of zinc oxide/antimony tin oxide composite nano-material
  • Preparation method of zinc oxide/antimony tin oxide composite nano-material
  • Preparation method of zinc oxide/antimony tin oxide composite nano-material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Slowly add the isopropanol solution with a concentration of 0.1 mol / L zinc acetylacetonate into the DMF solution with a concentration of 0.1 mol / L tin tetrachloride and antimony trichloride, and mix well. Wherein the molar ratio of zinc acetylacetonate and tin tetrachloride is 9:0.9. The obtained mixed solution was subjected to a cross-linking reaction, the reaction temperature was 150° C., and the reaction time was 8 hours. Wherein, the molar concentration of the DMF mixed solution of tin tetrachloride and antimony trichloride is 0.1 mol / L, and the molar ratio of tin tetrachloride and antimony trichloride is 9:2. After the cross-linking reaction, the high-temperature reaction was carried out in the muffle furnace. The high-temperature reaction temperature was 800 °C and the reaction time was 6 h. After natural cooling, the target product is obtained.

[0035] The band gap of the product is 2.5 eV. The yield of its product is 99.5%. The purity of the product is not ...

Embodiment 2

[0037] The methanol solution with a concentration of 0.1 mol / L zinc acetylacetonate was slowly added dropwise to the DMF solution with a concentration of 0.1 mol / L tin tetrachloride and antimony trichloride, and mixed well. Wherein the molar ratio of zinc acetylacetonate and tin tetrachloride is 9:1.8. The obtained mixed solution was subjected to cross-linking reaction, the reaction temperature was 400° C., and the reaction time was 2 hours. Wherein, the molar concentration of the DMF mixed solution of tin tetrachloride and antimony trichloride is 0.1 mol / L, and the molar ratio of tin tetrachloride and antimony trichloride is 9:2. After the cross-linking reaction, the high-temperature reaction was carried out in the muffle furnace. The high-temperature reaction temperature was 500 °C and the reaction time was 24 h. After natural cooling, the target product is obtained.

[0038] The band gap of the product is 2.6 eV. The yield of its product is 99.3%. The product purity is ...

Embodiment 3

[0040] Slowly add the ethylene glycol solution with a concentration of 0.05 mol / L zinc acetylacetonate into the DMF solution with a concentration of 0.05 mol / L tin tetrachloride and antimony trichloride, and mix well. Wherein the molar ratio of zinc acetylacetonate and tin tetrachloride is 9:3.6. The obtained mixed solution was subjected to cross-linking reaction, the reaction temperature was 400° C., and the reaction time was 6 hours. Wherein, the molar concentration of the DMF mixed solution of tin tetrachloride and antimony trichloride is 0.05 mol / L, and the molar ratio of tin tetrachloride and antimony trichloride is 9:2. After the cross-linking reaction, the high-temperature reaction was carried out in the muffle furnace. The high-temperature reaction temperature was 600 °C and the reaction time was 12 h. After natural cooling, the target product is obtained.

[0041] The band gap of the product is 2.7 eV. The yield of its product is 98.0%. The product purity is not l...

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Abstract

The invention belongs to the technical field of preparation of functional materials, and relates to a preparation method of a zinc oxide/antimony tin oxide composite nano-material. The method comprises the following steps: slowly adding an alcohol solution of zinc acetylacetonate to a tin tetrachloride and antimony trichloride mixed DMF solution in a dropwise manner, fully stirring above solutions to realize uniform mixing, carrying out a cross-linking reaction at a certain temperature, and carrying out heat treatment in a muffle furnace to obtain the zinc oxide/antimony tin oxide composite nano-material. The preparation method is simple and easy, and the zinc oxide/antimony tin oxide composite nano-material has the advantages of high purity, low content of impurities, low preparation cost, excellent performances, and realization of industrial batch production. The zinc oxide/antimony tin oxide composite nano-material prepared in the invention has high catalysis activity as a photocatalytic material, and has wide application prospects in the field of degradation of dye wastewater and indoor harmful gases and the field of photocatalytic disinfection.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional materials, and in particular relates to a preparation method of a zinc oxide / tin antimony oxide composite nanomaterial. Background technique [0002] The general light-absorbing semiconductor photocatalysis principle believes that when the energy is equal to or greater than its band gap (Band Gap) light radiation, electrons are stimulated to transition from the highest electron-occupied molecular orbital (HOMO, ie Valence band) to the lowest electron-occupied Molecular orbital (LUMO, that is, conduction band), thus leaving photogenerated holes (h+) in the valence band, and introducing photogenerated electrons (e-) into the conduction band. Photo-generated holes and photo-generated electrons have oxidation and reduction capabilities, respectively, thereby triggering the next redox reaction. However, if there are no suitable active / reactive sites on the surface of semiconductor ca...

Claims

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Application Information

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IPC IPC(8): B01J23/18
CPCB01J23/002B01J23/18B01J35/004B01J2523/00B01J2523/27B01J2523/43B01J2523/53
Inventor 许家胜孙誉东张杰王莉丽王琳唐爽李阁丁亮艾慧婷车昕彤刘娇唐克邢锦娟刘琳钱建华
Owner BOHAI UNIV
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