GaN Growth Method Based on Hexagonal Boron Nitride and Magnetron Sputtering AlN

Abstract

The invention discloses a gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride. The method is mainly used for improving the quality of gallium nitride material. The method comprises the following growing steps: (1) growing of a boron nitride transition layer; (2) magnetron sputtering of an aluminum nitride transition layer; (3) heat treatment; (4) growing of an aluminum nitride buffer layer; (5) growing of a gallium nitride layer with a low V-SH ratio; and (6) growing of a gallium nitride layer with a high V-SH ratio. A gallium nitride film formed according to the method has the advantages of combining hexagonal boron nitride and magnetron-sputtered aluminum nitride, having high material quality and a large applicable substrate range and being capable of being used for manufacturing high-performance gallium nitride devices.

Description

technical field [0001] The invention belongs to the field of electronic technology, and further relates to a gallium nitride growth method based on hexagonal boron nitride and magnetron sputtering aluminum nitride in the field of microelectronic technology. The invention can be used for making gallium nitride thin films and devices thereof. Background technique [0002] The third-generation semiconductors represented by gallium nitride have the advantages of large band gap, high breakdown field strength, high thermal conductivity, corrosion resistance and radiation resistance, and are widely used in optoelectronic devices and electronic devices. One of the factors that limit the quality and price of GaN-based devices is the substrate material. Due to the differences in lattice constants and other physical properties between different materials, the lattice between the substrate material and GaN single crystal Mismatch and thermal mismatch are large, so GaN thin films obtain...

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Problems solved by technology

However, the disadvantages of this method are: 1. Using HVPE for homoepitaxy requires metal-organic chemical vapor deposition (MOCVD) to grow gallium nitride films in advance, and the process is complicated.

2. Using hexagonal boron nitride nanosheets, the quality of epitaxial gallium nitride is poor, and the background carrier concentration is high

However, the shortcomings of this method are: 1. Graphene is easy to decompose at high temperature to produce a large amount of C impurities, and the direct growth of GaN will make the impurities diffuse into the material and affect the material quality of GaN

2. The thickness of graphene is very thin, it is difficult to effectively alleviate the lattice mismatch between the substrate and gallium nitride, which greatly limits the selection range of substrates

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