Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A multiferroic bi0.83pr0.15sr0.02fe0.97-xmn0.03cuxo3-cufe2o4 composite film and its preparation method

A bi0.83pr0.15sr0.02fe0.97-xmn0.03cuxo3-cufe2o4, cufe2o4 technology is applied in the field of functional materials to improve ferroelectric and ferromagnetic properties, reduce leakage current density, and suppress volatilization

Active Publication Date: 2019-02-19
SHAANXI UNIV OF SCI & TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, it has not been seen that doping Pr and Sr on the A site, doping Mn, Cu on the B site, and magnetic thin film CuFe 2 o 4 Composite method to prepare Bi 0.83 PR 0.15 Sr 0.02 Fe 0.97-x mn 0.03 Cu x o 3 -CuFe 2 o 4 Composite films to improve BiFeO 3 Reports on various properties of thin films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A multiferroic bi0.83pr0.15sr0.02fe0.97-xmn0.03cuxo3-cufe2o4 composite film and its preparation method
  • A multiferroic bi0.83pr0.15sr0.02fe0.97-xmn0.03cuxo3-cufe2o4 composite film and its preparation method
  • A multiferroic bi0.83pr0.15sr0.02fe0.97-xmn0.03cuxo3-cufe2o4 composite film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Step 1: Dissolve ferric nitrate and copper nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, then add acetic anhydride and stir for 90 minutes to obtain stable CuFe with a Cu ion concentration of 0.15mol / L 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3:1;

[0040] Step 2: Dissolve bismuth nitrate, praseodymium nitrate, strontium nitrate, ferric nitrate, manganese nitrate and copper nitrate in a solvent in a molar ratio of 0.88:0.15:0.02:0.96:0.03:0.01 (x=0.01, bismuth nitrate excess 5% ), to obtain a stable Bi with a total concentration of metal ions of 0.25mol / L 0.83 PR 0.15 Sr 0.02 Fe 0.96 mn 0.03 Cu 0.01 o 3 Precursor solution; the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1;

[0041] Step 3: Select the FTO / glass substrate, place the cut FTO / glass substrate in detergent, acetone...

Embodiment 2

[0047]Step 1: Dissolve ferric nitrate and copper nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, then add acetic anhydride and stir for 90 minutes to obtain stable CuFe with a Cu ion concentration of 0.15mol / L 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3:1;

[0048] Step 2: Dissolve bismuth nitrate, praseodymium nitrate, strontium nitrate, ferric nitrate, manganese nitrate and copper nitrate in a solvent in a molar ratio of 0.88:0.15:0.02:0.95:0.03:0.02 (x=0.02, bismuth nitrate excess 5% ), to obtain a stable Bi with a total concentration of metal ions of 0.25mol / L 0.83 PR 0.15 Sr 0.02 Fe 0.95 mn 0.03 Cu 0.02 o 3 Precursor solution; the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1;

[0049] Step 3: Select the FTO / glass substrate, place the cut FTO / glass substrate in detergent, acetone,...

Embodiment 3

[0055] Step 1: Dissolve ferric nitrate and copper nitrate in ethylene glycol methyl ether at a molar ratio of 1:2, stir for 30 minutes, then add acetic anhydride and stir for 90 minutes to obtain stable CuFe with a Cu ion concentration of 0.15mol / L 2 o 4 Precursor, CuFe 2 o 4 The volume ratio of ethylene glycol methyl ether and acetic anhydride in the precursor solution is 3:1;

[0056] Step 2: Dissolve bismuth nitrate, praseodymium nitrate, strontium nitrate, ferric nitrate, manganese nitrate and copper nitrate in a solvent in a molar ratio of 0.88:0.15:0.02:0.94:0.03:0.03 (x=0.03, bismuth nitrate excess 5% ), to obtain a stable Bi with a total concentration of metal ions of 0.25mol / L 0.83 PR 0.15 Sr 0.02 Fe 0.94 mn 0.03 Cu 0.03 o 3 Precursor solution; the solvent is a mixed solution of ethylene glycol methyl ether and acetic anhydride with a volume ratio of 3:1;

[0057] Step 3: Select the FTO / glass substrate, place the cut FTO / glass substrate in detergent, acetone...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
saturated polarizationaaaaaaaaaa
remanent polarizationaaaaaaaaaa
saturated polarizationaaaaaaaaaa
Login to View More

Abstract

The invention discloses a multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 (x=0.01-0.05) crystalline film in the upper layer and a CuFe2O4 crystalline film in the lower layer. The preparation method comprises respectively preparing a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 precursor solution and a CuFe2O4 precursor solution, carrying out spin-coating on a substrate with multiple CuFe2O4 films and carrying out spin-coating on the CuFe2O4 film with multiple Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 films to obtain the multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film. The preparation method has simple equipment requirements, can prepare the film with good uniformity, easily controls a doping amount, improves ferroelectric and ferromagnetic properties of the film and effectively reduces film leakage current density.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a method for preparing a multiferroic composite film on the surface of a functionalized substrate, in particular to a multiferroic Bi 0.83 PR 0.15 Sr 0.02 Fe 0.97-x mn 0.03 Cu x o 3 -CuFe 2 o 4 Composite membrane and method for its preparation. Background technique [0002] BiFeO 3 It is a typical single-phase multiferroic material, and it is also a lead-free material with ferroelectricity and ferromagnetism. BiFeO 3 The magnetization (M) and electric polarization (P) of the magnetic field can be electromagnetically coupled, and a magnetic field can be induced by an electric field, and at the same time, the magnetic field can induce electric polarization, that is, the magnetoelectric effect. This has broad applications in the fields of microelectronics, optoelectronics, integrated optics, and microelectromechanical systems, and is currently a hot topic of research. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2217/70C03C2217/94C03C2218/116
Inventor 谈国强乐忠威晏霞任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com