Method for preparing copper indium sulfide photoelectric thin film from copper chloride
A photoelectric thin film, copper indium sulfur technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of high preparation costs and complicated process routes, achieve low production costs, low requirements for equipment, and realize large-scale production The effect of industrial production
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[0032] a. Cleaning of the glass substrate: the glass substrate is cleaned as described above, and the size of the substrate is 20mm×20mm.
[0033] b. 1.13 parts of CuCl 2 2H 2 O, 2.55 In(NO 3 ) 3 4.5H 2 O and 1.0 CH 3 CSNH 2 Put into 13.3 parts of ethanol and mix evenly, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution mix evenly.
[0034] c. Drop the above solution onto the glass substrate placed on the homogenizer, start the homogenizer, make the homogenizer rotate at 300 rpm for 5 seconds, and rotate at 2150 rpm for 15 seconds, so that the dripped solution is coated After uniformity, after the substrate is dried, the above-mentioned solution is repeatedly dripped and spin-coated, and then dried again. This is repeated 3 to 5 times, and a precursor thin film sample with a certain thickness is obtained on the glass substrate.
[0035] d. Put the precursor thin film sample obtained by the above process into a sealable containe...
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