Process for preparing mesoporous graphene and field effect transistor biosensor based on mesoporous graphene

Abstract

The invention relates to a process for preparing mesoporous graphene and a field effect transistor biosensor based on the mesoporous graphene. Periodically arranged nanometer microsphere arrays are assembled on the surface of graphene, evaporation of a metal film is performed, nanometer microspheres are removed, the metal film serves as a mask to prepare mesoporous graphene with different pore diameters is prepared, the mesoporous graphene having different hole pitches is obtained, and the goal of regulating energy gaps of the graphene is achieved; oxygen plasma is utilized to etch active oxygen-containing groups formed by the graphene, and bioactive molecules can be connected; use of common coupling agents such as AuNPs, glutaraldehyde, pyrenebutyric acid, 1-hydroxysuccinimide eater-1-pyrenebutyric acid is avoided, and the manufacturing cost of the biosensor is greatly reduced. According to the field effect transistor biosensor based on the mesoporous graphene, band gaps of the graphene are opened, the biosensor has a large current on/off ratio, a very small amount of biomolecules can make electric conductivity of a graphene conducting channel have a remarkable response, and the detection sensitivity is greatly improved.

Description

Technical field [0001] The invention belongs to the field of biosensors, and particularly relates to a process for preparing mesoporous graphene and a biosensor based on mesoporous graphene field effect transistors. Background technique [0002] Graphene is a new type of two-dimensional carbon material that exhibits excellent electrical properties. Nanoelectronic devices based on graphene are considered to be excellent alternatives to traditional semiconductors. However, the zero band gap of intrinsic graphene limits its depth Important application factors, such as field effect transistors, require non-zero band gap semiconductor materials; therefore, it is of great significance to control the band gap width of graphene. [0003] With the development of graphene preparation technology, it is relatively easy to obtain graphene with a complete structure, but the band gap width of graphene is almost zero or very small, and its use in the preparation of semiconductor devices is greatl...

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Problems solved by technology

[0006] (3) Layer number control method; single-layer graphene is difficult to meet the application requirements in some fields, and it is necessary to develop a preparation process for preparing high-quality few-layer and multi-layer graphene; for example, the intrinsic band gap of single-layer graphene is zero , has great application limitations in the field of semiconductors; existing studies have shown that bilayer graphene with an AB stacking structure can produce continuously adjustable band gaps within a certain range under the action of an external electric field, although for the growth of bilayer graphene Graphene has done a lot of research, but because the grown double-layer graphene cannot be precisely regulated, or it is a random layer stacking structure, or the number of layers is uneven, there are more three-layer or single-layer regions; how to control the stacking structure, Improving the uniformity of layer number is a common problem faced by the current CVD growth of bilayer and multilayer graphene research

[0007] In summary, it is simple and feasible to design the geometric size of graphene to control the band gap through physical methods; however, due to the constraints of photolithography technology, the width of graphene nanoribbons prepared by etching is greatly limited

In addition, cutting carbon nanotubes cannot guarantee the uniformity of graphene nanoribbons, and is not suitable for large-scale preparat

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