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Method for preparing SnO2-doped ZnO sputtering target material

A sputtering target material and target material technology, applied in sputtering coating, metal material coating process, ion implantation plating, etc., can solve the problems of non-disclosure and achieve the effect of improving comprehensive performance

Active Publication Date: 2016-12-14
GEMCH MATERIAL TECH SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] For SnO 2 The technique of doping ZnO sputtering targets has not been published yet

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0018] In the present invention, the steps of the preparation method include:

[0019] 1): Select SnO with a particle size of 1-5μm and a purity of ≥99.95% 2 and ZnO powder as raw materials, use mixing equipment to mix them evenly in proportion, among which SnO 2 The powder accounts for 20-50% of the mass ratio of the mixed powder.

[0020] 2): Assemble a graphite mold, and coat the surface of the inner cavity of the graphite mold with 0.5mm thick high temperature resistant ZrO 2 Protective coating; put the mixed powder in 1) into the assembled graphite mold, and compact it with a special tool.

[0021] 3): Put the powdered and tamped graphite mold in 2) into a nitrogen atmosphere protection furnace for heating and pressing, that is, hot pressing. The heating temperature in the furnace is 1000°C-1300°C, the pressure is 5MPa-30MPa, and heating and pressing Time 2-6 hours.

[0022] 4): The semi-finished product hot-pressed in 3) is taken out from the nitrogen protection furn...

Embodiment 1

[0025] Select SnO with a purity ≥ 99.95% and a particle size of 1-5 μm 2 powder and ZnO powder as raw materials, weighing SnO2 200g ZnO powder and 800g ZnO powder; put the two powders weighed into a mixing equipment with a volume of 10L, and the mixing equipment works for 8 hours to make the two powders completely uniform; assemble a graphite mold, and coat the surface of the inner cavity of the graphite mold with 0.5mm thick high temperature resistant ZrO 2 Protective coating; put the mixed powder into the assembled graphite mold, and tamp it with special tools; place the powdered and tamped graphite mold in a nitrogen atmosphere protection furnace for heating; use a Roots pump to make the pressure in the nitrogen furnace When it reaches 100 Pa, stop the Roots pump, and then fill nitrogen into the nitrogen atmosphere protection furnace. The pressure of the nitrogen gas is less than 1 atmosphere, heat the nitrogen atmosphere protection furnace at a heating rate of 30°C / min, an...

Embodiment 2

[0027] The previous process and the mass ratio of raw materials are the same as in Example 1. In the later stage, the nitrogen atmosphere protection furnace is heated, the heating rate is set to 30°C / min, heated to 1300°C, and kept for 5 hours; while heating, the graphite mold is pressurized, and the pressure is from 0 Increase to 15Mpa; after keeping at 1300°C for 5 hours, stop heating and pressurizing the nitrogen atmosphere protection furnace to cool the nitrogen atmosphere protection furnace to room temperature; take out the graphite mold from the nitrogen atmosphere protection furnace, and take out the pressed SnO 2 Doped ZnO semi-finished target for processing, the processing size is 200mm×100mm×8mm, and the target density is 5.82g / cm measured by drainage method 3 .

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Abstract

The invention discloses a method for preparing a SnO2-doped ZnO sputtering target material. The method includes the steps that SnO2 and ZnO powder with the grain size being 1-5 um and the purity being larger than or equal to 99.95% is selected as raw materials, the raw materials are evenly mixed in proportion through mixing equipment, and the SnO2 powder accounts for 20%-50% mass weight of mixed powder; a graphite mold is assembled, the surface of an inner cavity of the graphite mold is coated with a high temperature resistant ZrO2 protective coating with the thickness being 0.5mm; the mixed powder is placed into the assembled graphite mold, and tamping is performed with a special tool; the tamped graphite mold with the powder is placed into a nitrogen atmosphere shielded furnace to be heated and pressurized, namely hot pressing is performed; and the heating temperature inside the furnace is 1000-1300 DEG C, pressure is 5-30MPa, and heating and pressurizing time is 2-6 hours. By means of doping, the overall performance of a ZnO thin film is improved, and ZnO-based transparent conducting thin films can be widely applied on the aspects of solar cells, flat-panel displays, electromagnetic shielding, hot mirrors, ultraviolet detectors and the like.

Description

technical field [0001] The invention relates to the general coating technology of IPC classification C23C vacuum evaporation method, sputtering method, ion implantation method or chemical vapor deposition method, and belongs to the field of new materials, especially SnO 2 A method for preparing a doped ZnO sputtering target. Background technique [0002] The requirements for sputtering targets are higher than those of the traditional material industry. General requirements such as size, flatness, purity, various impurity content, density, N / O / C / S, grain size and defect control; higher requirements or special Requirements include: surface roughness, resistance value, grain size uniformity, composition and structure uniformity, foreign matter (oxide) content and size, magnetic permeability, ultra-high density and ultra-fine grain, etc. Magnetron sputtering coating is a new type of physical vapor phase coating method, which uses an electron gun system to emit and focus electro...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/08C01G19/02
CPCC01G19/02C23C14/086C23C14/3414
Inventor 贾泽夏庄志杰诸斌顾宗慧
Owner GEMCH MATERIAL TECH SUZHOU
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