Solution processing preparation method of crystalline Sb2S3 thin film

A solution processing and crystallinity technology, applied in chemical instruments and methods, inorganic chemistry, coatings, etc., can solve the problems of unfavorable large-area preparation, high energy consumption, complex equipment and preparation process, etc. The effect of large particle size and large light absorption coefficient

Pending Publication Date: 2017-01-04
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The chemical vapor deposition method involves the application of a high vacuum and substrate temperature control syste...

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  • Solution processing preparation method of crystalline Sb2S3 thin film
  • Solution processing preparation method of crystalline Sb2S3 thin film
  • Solution processing preparation method of crystalline Sb2S3 thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Embodiment 1: Crystalline Sb on the FTO conductive glass substrate 2 S 3 Film preparation

[0033] (1) Cleaning of FTO conductive glass:

[0034] The FTO conductive glass was ultrasonically cleaned by acetone, isopropanol, and ultrapure water for 5 minutes to obtain a clean FTO conductive glass substrate, which was dried and used for later use.

[0035] (2) SbCl 3 Sb with a concentration of 1.0mol / L 2 S 3 Preparation of reaction precursor solution:

[0036] SbCl at room temperature 3 Dissolve in N,N-dimethylformamide and stir for 0.5 hours to obtain clear SbCl with a concentration of 1.0mol / L 3 solution; then, in the resulting SbCl 3 Add thiourea to the solution, where SbCl 3 The molar ratio to thiourea was 1:1.8, and stirred at room temperature for 0.5 hours to obtain clear SbCl 3 and thiourea mixture solution; finally, add glycerol to this mixture solution, wherein the volume ratio of N,N-dimethylformamide and glycerol is 2.5:1, and stir for 10 minutes to ob...

Embodiment 2

[0041] Example 2: TiO 2 Crystalline Sb on Thin Film Substrate 2 S 3 Film preparation

[0042] (1) cleaning of FTO conductive glass: with embodiment 1.

[0043] (2)TiO 2 Preparation of film backing:

[0044] Mix absolute ethanol, n-butyl titanate, and glacial acetic acid at a volume ratio of 20:5:0.5 to prepare uniform, colorless and transparent TiO 2 Sol precursor. Then, the TiO 2 The sol precursor solution was spin-coated on a clean FTO conductive glass (2500 rpm, 30 seconds) to obtain TiO 2 Sol film; the TiO 2 After the sol film was stored at room temperature in a humidifier with a relative humidity of 50% for 12 hours, it was placed in a muffle furnace in an air atmosphere, and the temperature of the muffle furnace was raised to 550 °C at a heating rate of 1 °C / min. ℃, and kept at this temperature for 30 minutes for TiO 2 Sintering of the sol film; after sintering, let the muffle furnace cool down to room temperature at a rate of 1°C / min to obtain TiO 2 Film subs...

Embodiment 3

[0051] Example 3: TiO 2 Crystalline Sb on Thin Film Substrate 2 S 3 Film preparation

[0052] (1) cleaning of FTO conductive glass: with embodiment 1.

[0053] (2)TiO 2 The preparation of film backing base: with embodiment 2.

[0054] (3) SbCl 3 Sb with a concentration of 1.5mol / L 2 S 3 Preparation of reaction precursor solution:

[0055] SbCl at room temperature 3 Dissolve in N,N-dimethylformamide and stir for 0.5 hours to obtain clear SbCl with a concentration of 1.5mol / L 3 solution; then, in the resulting SbCl 3 Add thiourea to the solution, where SbCl 3 The molar ratio to thiourea was 1:1.8, and stirred at room temperature for 0.5 hours to obtain clear SbCl 3 and thiourea mixture solution; finally, add glycerol to this mixture solution, wherein the volume ratio of N,N-dimethylformamide and glycerol is 2.5:1, and stir for 10 minutes to obtain SbCl 3 Sb with a concentration of 1.5mol / L 2 S 3 Reaction precursor solution. The Sb 2 S 3 The reaction precursor s...

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Abstract

The invention discloses a solution processing preparation method of a crystalline Sb2S3 thin film. The solution processing preparation method comprises the following steps of dissolving a simple compound in mixed organic solvent at room temperature to prepare a stable, transparent and uniform Sb2S3 reaction precursor solution; depositing a reaction precursor thin film on a substrate by a solution processing technology at room temperature and normal pressure; performing thermal treatment on the reaction precursor thin film to prepare the crystalline Sb2S3 thin film with great grain size, high density, controllable thickness and large absorption coefficient. A preparation technology disclosed by the invention has the advantages of simple and feasible method, low cost, and low toxicity and safety of used solvent; the defects of high requirement on equipment, complex preparation conditions, use of high-toxicity solvent, low degree of crystallinity of the Sb2S3 thin film and the like in the prior art are overcome; the solution processing preparation method has an important application value in the fields of photoelectric materials, photovoltaic materials, devices and the like.

Description

technical field [0001] The invention relates to the field of preparation methods of semiconductor thin film materials, specifically a crystalline Sb 2 S 3 Solution processing preparation method of thin film. Background technique [0002] Antimony trisulfide (Sb 2 S 3 ) is a direct bandgap semiconductor material with high optical refractive index, high photosensitivity, excellent pyroelectricity, good photoconductivity and electrical conductivity. It is important in TV cameras, microwave devices, conversion devices and various optoelectronic devices. Application of [J.Non-Cryst.Solids2005,351,987-992; Appl.Surf.Sci.2008,254,3200-3206; Opt.Mater.2015,46,536-541; Mater.Sci.Semicond.Proc.2015 , 40, 643-649]. Because it has a bandgap width (E g =1.7-1.8eV) and larger light absorption coefficient (10 5 cm -1 ), Sb 2 S 3 It is considered to be an effective solar cell light absorbing material [Thin Solid Films 2009,517,2503-2507; Nano Lett.2010,10,2609-2612; NanoLett.2011,...

Claims

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Application Information

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IPC IPC(8): C01G30/00C03C17/34
CPCC01G30/008C03C17/347C03C2218/116C03C2218/32
Inventor 陈俊伟王命泰齐娟娟
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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