Oxygen-doped SbSe nano phase-change thin film material, preparation method and application of oxygen-doped SbSe nano phase-change thin film material

Abstract

The invention belongs to the nanometer material technical field and relates to an oxygen-doped SbSe nano phase-change thin film material, preparation method and application of the oxygen-doped SbSe nano phase-change thin film material. The general chemical formula of the oxygen-doped SbSe nano phase-change thin film material is Sb70Se30Ox, wherein x represents an oxygen flow rate value, the unit of the oxygen flow rate value is sccm, and x is equal to 1, 2 or 3; and argon and oxygen are introduced simultaneously in a radio frequency sputtering process for depositing the Sb70Se30 thin film, and the Sb70Se30 thin film is prepared at the nanometer scale. Compared with a conventional Ge2Sb2Te5 phase-change thin film material, the oxygen-doped SbSe nano phase-change thin film material of the invention has high crystallization speed, high crystallization temperature, high activation energy, high amorphous state and high crystal resistance; and the oxygen-doped SbSe nano phase-change thin film material does not contain tellurium, so that the oxygen-doped SbSe nano phase-change thin film material has no negative impacts on human bodies and the environment. The oxygen-doped SbSe nano phase-change thin film material is suitable for preparing a high-speed, high-stability and low-power consumption phase-change memory, and has a very bright industrial prospect.

Description

Technical field [0001] The invention belongs to the technical field of nanomaterials, and specifically relates to an oxygen-doped SbSe nanophase change film material, a preparation method thereof, and an application in the preparation of a phase change memory. Background technique [0002] Phase-Change Random Access Memory (PCRAM) is a new type of non-volatile memory that uses sulfur compounds as storage media. The storage medium material has high resistance when it is in the amorphous state, and has low resistance when it is in the crystalline state. The principle is to use the heat of the electric pulse to make the storage medium material between the crystalline state (low resistance) and the amorphous state (high resistance). Conversion, and then realize the writing and erasing of information, and the reading of information is realized by measuring the change of resistance. Because the phase change memory has a long cycle life (> 10 13 Second), small component size, high s...

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Problems solved by technology

[0003] Ge 2 Sb 2 Te 5 It is a phase-change memory material widely used at present. Although its performance in all aspects is balanced and there is no major disadvantage, there are still many places to be improved and improved (see Zhou Xilin, et al., Scientific Reports, 2015, 5: 11150 ))

First of all, Ge 2 Sb 2 Te 5 The phase change speed of thin film materials is slow, which cannot meet the information storage requirements of the future high-speed and big data era; secondly, Ge 2 Sb 2 Te 5 The thermal stability of thin film materials is poor, the crystallization temperature is only about 160°C, and the data can only be kept for 10 years at an ambient temperature of 85°C, which cannot fully meet the requirements of future highly integrated semiconductor chips; The tellurium element has a low melting point and low vapor pressure, and is easy to volatilize during high-temperature preparation, which has a negative impact on the human body and the environment

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