Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of cdse/cds nanorod, polarizing film and preparation method thereof

A polarizing film and nanorod technology, applied in the field of quantum dots, can solve problems such as energy loss and complex stacking structure, achieve high quantum yield, high luminous efficiency, and realize the effect of light output

Active Publication Date: 2020-06-23
TCL CORPORATION
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a CdSe / CdS nanorod, a polarizing film and a preparation method thereof, aiming at solving the problem that existing quantum dot TVs still use polarizers, liquid crystals and filters to control Light output, such a stack structure is not only complicated but also causes a lot of energy loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of cdse/cds nanorod, polarizing film and preparation method thereof
  • A kind of cdse/cds nanorod, polarizing film and preparation method thereof
  • A kind of cdse/cds nanorod, polarizing film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] 1. Preparation of CdSe / CdS core-shell nanorods:

[0073] (1) Preparation of CdSe seed crystal: 60 mg of cadmium oxide (CdO), 2.8 g of trioctylamine (Trioctylamine, TOA), 1.2 g of oleic acid (Oleic acid, OA) were mixed and stirred evenly in a 50 mL three-necked flask , heated to 170 °C under vacuum and degassed for 1 h. Under Ar atmosphere, the solution was heated to 300°C to fully dissolve cadmium oxide to form a colorless and transparent solution. Subsequently, 1.5 g of trioctylphosphine (Trioctylphosphine, TOP) was quickly injected into the flask, and the temperature of the solution decreased slightly. When the temperature of the solution rose to 300 °C, a mixed solution of 40 mg Se and 2 mL TOP was injected into the flask, and the reaction was maintained at 300 °C for 5 min. After the reaction was completed, the solution was cooled to 100 °C and poured into a centrifuge tube, ethyl acetate and methanol were added to precipitate it, and the precipitate was taken out...

Embodiment 2

[0078] 1. Preparation of CdSe / CdS core-shell nanorods:

[0079] (1) Preparation of CdSe seed crystal: 128.4 mg of cadmium oxide (Cadmium oxide, CdO), 3.53 g of trioctylamine (Trioctylamine, TOA), 2.06 g of oleic acid (Oleic acid, OA) were mixed and stirred evenly in a 50 mL three-necked flask , heated to 170 °C under vacuum and degassed for 1 h. Under Ar atmosphere, the solution was heated to 300°C to fully dissolve cadmium oxide to form a colorless and transparent solution. Subsequently, 1.5 g of trioctylphosphine (Trioctylphosphine, TOP) was quickly injected into the flask, and the temperature of the solution decreased slightly. When the temperature of the solution rose to 320 °C, a mixed solution of 79 mg Se and 2 mL TOP was injected into the flask, and the reaction was maintained at 320 °C for 5 min. After the reaction was completed, the solution was cooled to 100 °C and poured into a centrifuge tube, ethyl acetate and methanol were added to precipitate it, and the preci...

Embodiment 3

[0084] 1. A preparation method of CdSe / CdS nanorods:

[0085] Add cadmium oxide, trioctylamine and oleic acid into the flask at a ratio of 1:5:2 by molar ratio, stir evenly, vacuumize at 160°C for 50 minutes, and then heat to 300°C in an Ar gas environment to oxidize The cadmium is fully dissolved to obtain a colorless transparent solution; the mixed solution of selenium powder and TOP is added to the colorless transparent solution, and the reaction is carried out at 280° C. for 4 minutes to obtain an intermediate mixed solution; the intermediate mixed solution is cooled to Pour it into a centrifuge tube after 80°C, add ethyl acetate and methanol to precipitate it, take out the precipitate, add toluene and methanol and centrifuge once to obtain CdSe seed crystals, and dissolve the CdSe seed crystals in TOP solution to obtain CdSe seed crystal solution, set aside; dissolving S powder in TOP solution to obtain S-TOP solution, then adding the S-TOP solution into the CdSe seed sol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a CdSe / CdS nano-rod, a polarized thin film and a preparation method thereof. The preparation method of the polarized thin film comprises the following steps: preparing a CdSe / CdS nano-rod solution in advance, and coating the CdSe / CdS nano-rod solution on an ITO (Indium Tin Oxide) glass substrate in a spinning manner by adopting a homogenizer; and finally, putting a spin-coated sample into a vacuum drying box and drying to prepare the polarized thin film. The prepared polarized thin film based on the CdSe / CdS nano-rod has the advantages of high quantum yield, high light emitting efficiency, good stability and the like, and transition dipoles of the CdSe / CdS nano-rod are arrayed along the long axis of the nano-rod and light can generate polarized emission, so that the polarized thin film can be used as a relatively good polarization light source; the polarized thin film based on the CdSe / CdS nano-rod, provided by the invention, is used as a backlight source, so that a quantum dot television can effectively realize light output; and the output of the light does not need to be controlled by a polaroid so that energy loss is avoided and a backlight source assembly structure is simplified.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a CdSe / CdS nanorod, a polarizing film and a preparation method thereof. Background technique [0002] Because liquid crystal display technology has the advantages of producing large pictures, occupying less space, low energy consumption, flat right-angle display, stable and non-flickering images, etc., it has gradually replaced cathode tube technology. Liquid crystal display technology uses a backlight source, and at the same time uses polarizers, liquid crystals and filters to stack to achieve light output. Among them, the polarizer is used to adjust the vibration direction of light, and the filter is used to filter the white light backlight to produce other colors. However, such a liquid crystal stack structure will generate a lot of heat and cause energy loss. [0003] In recent years, quantum dots have become a new generation of display materials with great application ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/30H01L33/58
CPCG02B5/3041H01L33/58
Inventor 覃辉军刘政杨一行
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com