A preparation method of polyamide quartz crystal chip assembled with polyelectrolyte
A technology of quartz crystals and polyelectrolytes, applied in polyamide coatings, material absorption weighing, coatings, etc., can solve problems that cannot represent the surface properties of polyamide nanofiltration membranes, and achieve the effect of ensuring modification
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[0031] The preparation method of the polyamide quartz crystal chip assembled by polyelectrolyte of the present invention comprises the following steps:
[0032] 1) Substrate pretreatment: Soak the silica substrate in a sodium dodecyl sulfate solution with a temperature of 20-30°C and a mass concentration of 2-5% for 20-30 minutes, and then place it in ultrapure water , at a temperature of 20-30°C for 10-20 minutes, rinsed with ultrapure water and dried with nitrogen, and finally placed the silicon dioxide substrate under a UV lamp with a power of 30-40w and a wavelength of 185nm for 10- 30min, stand by;
[0033] 2) Generation of poly-L-lysine adsorption layer:
[0034]First prepare 4-hydroxyethylpiperazineethanesulfonic acid buffer solution and poly-L-lysine solution: dissolve 4-hydroxyethylpiperazineethanesulfonic acid in ultrapure water, the preparation concentration is 10mM, and the pH is 7 —7.5 4-hydroxyethylpiperazineethanesulfonic acid buffer solution, stand-by. Disso...
Embodiment 1
[0045] Soak the silicon dioxide substrate in a sodium lauryl sulfate solution with a temperature of 25°C and a mass concentration of 3% for 25 minutes, then place it in ultrapure water, and ultrasonically treat it at a temperature of 25°C for 10 minutes, and then Rinse fully with ultrapure water and blow dry with nitrogen, and finally place the silicon dioxide substrate under a UV lamp with a wavelength of 185nm and a power of 30w for 20min and set it aside.
[0046] 4-Hydroxyethylpiperazineethanesulfonic acid was dissolved in ultrapure water to prepare a 4-hydroxyethylpiperazineethanesulfonic acid buffer solution with a concentration of 10 mM and a pH of 7.4 for use. Poly-L-lysine hydrobromide was dissolved in 4-hydroxyethylpiperazineethanesulfonic acid buffer solution to obtain a poly-L-lysine solution with a concentration of 0.1 g / L, which was ready for use. Dissolve trimesoyl chloride and m-phenylenediamine in Isopar-G and N,N-dimethylacetamide respectively to obtain polym...
Embodiment 2
[0053] Soak the silicon dioxide substrate in a sodium lauryl sulfate solution with a temperature of 20°C and a mass concentration of 5% for 20 minutes, then place it in ultrapure water, and ultrasonically treat it at a temperature of 20°C for 20 minutes, and then Rinse fully with ultrapure water and blow dry with nitrogen, and finally place the silicon dioxide substrate under a UV lamp with a wavelength of 185nm and a power of 40w for 10min and set it aside.
[0054] 4-Hydroxyethylpiperazineethanesulfonic acid was dissolved in ultrapure water to prepare a buffer solution of 4-hydroxyethylpiperazineethanesulfonic acid with a concentration of 10 mM and a pH of 7 for use. Poly-L-lysine hydrobromide was dissolved in 4-hydroxyethylpiperazineethanesulfonic acid buffer solution to obtain a poly-L-lysine solution with a concentration of 0.3 g / L, which was ready for use. Dissolve trimesoyl chloride and m-phenylenediamine in Isopar-G and N,N-dimethylacetamide respectively to obtain poly...
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