Method for increasing doping concentration of phosphor in nanometer silicon material through employing boron-phosphor codoping

Abstract

The invention discloses a method for increasing the doping concentration of phosphor in a nanometer silicon material through employing the boron-phosphor codoping technology, and the method comprises the following steps: 1), preparing a multilayer film material doped with nanometer silicon / silicon oxide through employing PECVD; 2), obtaining the multilayer film material doped with nanometer silicon / silicon oxide (a-Si / SiO2) through the alternate conducting of two processes: noncrystalline silicon layer deposition / in-situ oxidation, and obtaining the thickness of the a-Si / SiO2 multilayer film through controlling the time of the noncrystalline silicon layer deposition / in-situ oxidation; 3), carrying out the dehydrogenation processing of the prepared a-Si / SiO2 multilayer film; 4), carrying out the high-temperature annealing under the nitrogen condition after dehydrogenation, enabling polycrystalline silicon to be crystalized to form nanometer silicon, activating foreign matter atoms to enter the nanometer silicon, and achieving the doping of the nanometer silicon. The method prepares the codoping nanometer silicon / silicon oxide multilayer film.

Description

[0001] 1. Technical field [0002] The present invention proposes a method that can solve the difficulty of doping nanomaterials and increase the doping concentration of impurities in nano-silicon, especially a new method that can increase the effective doping concentration of phosphorus in nano-silicon-based thin films through boron-phosphorus co-doping technology. technology. [0003] 2. Background technology [0004] Silicon (Si) is currently the most important semiconductor material. Since the 1960s, silicon materials have been widely used in microelectronics, solar photovoltaics, semiconductor integrated circuits and other fields. The development of the semiconductor industry based on silicon materials has greatly promoted the development of electronic science and information technology. With the development of semiconductor technology and devices, the size of silicon materials used in devices is also decreasing, and has entered the deep submicron and even nanoscale so fa...

AI Technical Summary

Problems solved by technology

[0008] The purpose of the invention is to solve key and difficult problems such as difficult doping of impurities caused by the "self-cleaning" effect and surface defect states in nano-silicon materials and low doping concentration; The method of doping concentration, especially to increase the effective doping concentration of impurities in low-dimensional semiconductor materials, to achieve effective and controllable doping, to solve problems such as impurity distribution and relative energy level position in nano-silicon materials

Images