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Method for industrialized mass production of silicon carbide powder

A silicon carbide powder, a large-scale technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve problems such as affecting the use of powder and interfering with product purity, and achieve low pollution, high purity, and low energy consumption. Effect

Active Publication Date: 2017-02-22
江苏中天利科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the rare earth elements introduced by this process are likely to interfere with the purity of the product and affect the subsequent use of the powder
Therefore, this method is not suitable for large-scale industrial preparation of high-purity silicon carbide powder

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] SiCl 4 with H 2 Mix at a molar ratio of 1:2.2, and react at 1200°C to obtain 4N high-purity Si powder; put ethylene glycol in N 2 High-temperature carbonization under protected conditions to obtain 4N high-purity C powder. Si powder and C powder are mixed and hydrolyzed, and the slurry is granulated and dried at 200°C, and carbonized at 600°C to obtain uniformly mixed SiO 2 Mix with powder C.

[0042] Pre-burn in a high-temperature furnace at 500-600 °C until the water vapor content drops to a level that cannot be detected by the instrument, and then in N 2 Grind evenly under protection. Then carry out medium temperature synthesis at 1400~1900°C. After the reaction, use 1900°C high-temperature vacuum distillation to remove impurities.

[0043] The obtained product is subjected to particle size analysis with a laser particle size analyzer, and the average particle size d 50 Distributed in 4 ~ 20μm. Using ICP-MS for elemental analysis, the Si content in the high-p...

Embodiment 2

[0045] SiHCl 3 with H 2 Mix at a molar ratio of 1:1.2 and react at 1100°C to obtain 4N high-purity Si powder; 2 High-temperature carbonization under protected conditions to obtain 4N high-purity C powder. After Si powder and C powder are mixed and hydrolyzed, the slurry is granulated and dried at 240°C, and carbonized at 600°C to obtain uniformly mixed SiO 2 Mix with powder C.

[0046] Pre-burn in a high-temperature furnace at 500-600 °C until the water vapor content drops to a level that cannot be detected by the instrument, and then in N 2 Grind evenly under protection. Then carry out medium temperature synthesis at 1400~1900°C. After the reaction, use 2000°C high-temperature vacuum distillation to remove impurities.

[0047] The obtained product is subjected to particle size analysis with a laser particle size analyzer, and the average particle size d 50 Distributed in 4 ~ 20μm. Using ICP-MS for elemental analysis, the Si content in the high-purity Si powder reaches...

Embodiment 3

[0049] SiI 4 with H 2 Mix at a molar ratio of 1:2.2 and react at 1200°C to obtain 4N high-purity Si powder; 2 High-temperature carbonization under protected conditions to obtain 4N high-purity C powder. After Si powder and C powder are mixed and hydrolyzed, the slurry is granulated and dried at 250°C, and carbonized at 550°C to obtain uniformly mixed SiO 2 Mix with powder C.

[0050] Pre-burn in a high-temperature furnace at 500-600 °C until the water vapor content drops to a level that cannot be detected by the instrument, and then in N 2 Grind evenly under protection. Then carry out medium temperature synthesis at 1400~1900°C. After the reaction, use 2100°C high-temperature vacuum distillation to remove impurities, and finally carry out directional condensation segregation purification.

[0051] The obtained product is subjected to particle size analysis with a laser particle size analyzer, and the average particle size d 50 Distributed in 4 ~ 20μm. Using ICP-MS for ...

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PUM

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Abstract

The invention discloses a method for industrialized mass production of silicon carbide powder, and relates to industrialized mass production of high-purity SiC powder. According to the method for the industrialized mass production of the silicon carbide powder, halogenosilane or silane is used as an original silicon resource, and mixture is blended more uniformly through the adoption of an incremental heating method and particularly a grinding process. Besides, directional coagulation is adopted to conduct segregation and purification on a product, so that pollution during the production process is lesser; a method combining precursor hydrolyzation with high temperature carbonization is adopted so that silicon powder and carbon powder can be mixed uniformly, thus guaranteeing good homogeneity of a final product.

Description

technical field [0001] The invention relates to an industrial scale production method of high-purity SiC powder. Background technique [0002] Since its birth, silicon carbide has become a leading inorganic non-metallic material due to its high hardness, chemical stability, good corrosion resistance, good thermal stability, small thermal expansion coefficient, high thermal conductivity, and high doping performance. An outstanding variety. Among them, ultra-fine silicon carbide powder is the preferred raw material for structural ceramics, functional ceramics, semiconductor components and other application fields due to its superior properties such as high chemical reaction performance and good uniformity. Silicon carbide ceramics have shown their talents in many fields such as national defense, microelectronics, chemical industry, petroleum, machinery, metallurgy and so on. Therefore, it is very necessary and meaningful to industrially prepare silicon carbide powder on a la...

Claims

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Application Information

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IPC IPC(8): C01B32/984
CPCC01P2004/61C01P2006/80
Inventor 陈琦尹龙卫银航李显坪俞欢
Owner 江苏中天利科技有限公司