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Etching solution and etching concentrate for multilayer film and etching method

A multi-layer film and etching solution technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as cost increase, blockage, short circuit, etc., and achieve the effect of light load

Active Publication Date: 2019-02-22
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The third item is the life of the etching solution itself
If deposits are generated by etching, the piping of the etching device will be clogged or the hole of the spray nozzle for spraying the etching solution will be clogged.
These phenomena cause the stoppage of the etching equipment, leading to an increase in cost
In addition, if the precipitate adheres to the product through the etching solution, it will cause short circuit and open circuit, and become a problem directly related to product quality.

Method used

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  • Etching solution and etching concentrate for multilayer film and etching method
  • Etching solution and etching concentrate for multilayer film and etching method
  • Etching solution and etching concentrate for multilayer film and etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0115] Will contain nitric acid 1.29% by mass,

[0116] Glycolic acid 1.14% by mass,

[0117] 0.85% by mass of malic acid,

[0118] β-alanine 1.42% by mass,

[0119] 1.71% by mass of 1-amino-2-propanol,

[0120] 0.11% by mass of phenylurea,

[0121] 1-propanol 1.16% by mass,

[0122] 2-butoxyethanol 1.29% by mass

[0123] The etching solution raw material and water 91.03% by mass were prepared to prepare an etching concentrate.

[0124] Hydrogen peroxide and the etching concentrate were mixed to prepare an etching solution having a hydrogen peroxide concentration of 4.50% by mass. Further, copper sulfate and molybdenum powder were added to make the copper ion concentration 2000ppm and the molybdenum ion concentration 200ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the etching concentrate and the results of each evaluation item. In addition, the concentration of each component in the whole etching l...

Embodiment 2

[0127] Will contain nitric acid 0.09% by mass,

[0128] Glycolic acid 1.44% by mass,

[0129] 0.86% by mass of malic acid,

[0130] 0.91% by mass of β-alanine,

[0131] 0.87% by mass of 1-amino-2-propanol,

[0132] 0.11% by mass of phenylurea,

[0133] 1-propanol 1.15% by mass,

[0134] 2-butoxyethanol 1.28% by mass

[0135] The etching solution raw material and water 93.29% by mass were prepared to prepare an etching concentrate.

[0136] Hydrogen peroxide and the etching concentrate were mixed to prepare an etching solution having a hydrogen peroxide concentration of 4.50% by mass. Further, copper sulfate and molybdenum powder were added to make the copper ion concentration 2000ppm and the molybdenum ion concentration 200ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the etching concentrate and the results of each evaluation item. In addition, the concentration of each component in the whole etchin...

Embodiment 3

[0138] Will contain nitric acid 0.18% by mass,

[0139] Glycolic acid 1.30% by mass,

[0140] 0.87% by mass of malic acid,

[0141] 0.91% by mass of β-alanine,

[0142] 0.86% by mass of 1-amino-2-propanol,

[0143] 0.11% by mass of phenylurea,

[0144] 1-propanol 1.16% by mass,

[0145] 2-butoxyethanol 1.28% by mass

[0146] The etching solution raw material and water 93.33% by mass were prepared to prepare an etching concentrate.

[0147] Hydrogen peroxide and the etching concentrate were mixed to prepare an etching solution having a hydrogen peroxide concentration of 4.50% by mass. Further, copper sulfate and molybdenum powder were added to make the copper ion concentration 2000ppm and the molybdenum ion concentration 200ppm. In addition, it was used at a liquid temperature of 30°C. Table 1 shows the concentration of each component in the etching concentrate and the results of each evaluation item. In addition, the concentration of each component in the whole etching ...

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PUM

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Abstract

When an etching liquid for etching, with a single liquid, a multilayer film formed of a copper layer and a molybdenum layer is to be used in mass production, it is important that the post-etching cross-sectional shape of the edge meets the morphological demand of having a forward tapered shape without any undercuts and that a precipitate does not develop in the etching liquid. This etching liquid for multilayer films including a copper layer and a molybdenum layer contains hydrogen peroxide, an inorganic acid, an acidic organic acid, a neutral organic acid, an amine compound, and a hydrogen peroxide decomposition inhibitor. Since the etching liquid does not contain an azole compound, the etching liquid does not generate a reactant with hydrogen peroxide and a precipitate is not produced in the etching liquid. In addition, the cross-sectional shape of the edge after the etching can be formed in a preferable forward tapered shape. Furthermore, since the etching liquid also does not contain a phosphorus compound or a fluorine compound, the etching liquid has a small environmental load upon being discarded.

Description

technical field [0001] The present invention relates to an etchant for a multilayer film, an etching concentrate, and an etching method used when etching a multilayer film of a copper layer and a molybdenum layer used for wiring in flat panel displays such as liquid crystal and organic EL. Background technique [0002] Aluminum is used as a wiring material for thin film transistors (TFT, Thin Film Transistor) of flat panel displays (FPDs) such as liquid crystals and organic electroluminescence (EL, Electro-Luminescence). In recent years, large-screen and high-definition FPDs have become popular, and the wiring material used is required to have a resistance lower than that of aluminum. Therefore, copper, which has lower resistance than aluminum, has been used as a wiring material in recent years. [0003] When copper is used as a wiring material, two problems arise in terms of adhesion to the substrate and diffusion into the semiconductor base material. That is, when used f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23F1/26H01L21/308
CPCC23F1/18C23F1/26H01L21/308
Inventor 着能真鬼头佑典渊上真一郎小佐野善秀
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD