Antimonide II superlattice infrared detector with planar structure and preparation method thereof

A technology of infrared detectors and planar structures, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as limited effects, unfinished processes, surface leakage currents of conductive channels on the surface of side walls, etc., to achieve Best performance, no surface leakage current, high reliability
CN106558633BActive Publication Date: 2017-10-24苏州晶歌半导体有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
苏州晶歌半导体有限公司
Publication Date
2017-10-24

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Abstract

The invention discloses an antimonide second class superlattice infrared detector with a planar structure and a preparation method thereof; the antimonide second class superlattice infrared detector comprises a lower electrode, an InAs / GaSb or InAs / InAsSb superlattice absorbed layer, an InAs / GaSb superlattice or GaSb or GaAsSb contact layer, and an upper electrode arranged in sequence in a set direction; a p type zone is also locally formed in the contact layer or the contact layer and the superlattice absorbed layer; the invention also discloses an infrared detector preparation method; the antimonide second class superlattice infrared detector uses the planar structure to prevent surface leak current caused by etching in a normal mesa structure, thus reducing dark current and noises of the infrared detector, and simplifying the manufacture technology of the antimonide second class superlattice infrared detector. In addition, an energy zone composition and material combination of the pin type detector are specially designed, thus ensuring photoproduction carrier collection not to be blocked by barriers, and effectively ensuring and improving infrared detector work performance.
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Description

technical field

[0001] The invention relates to an infrared detector, in particular to a pin-type antimonide II superlattice infrared detector based on a planar structure and a preparation method thereof, belonging to the technical field of semiconductors. Background technique

[0002] Infrared technology is an important strategic and tactical means in the military, and it is widely used in missile early warning, low-light imaging, target tracking, photoelectric countermeasures and other fields. Under the needs of modern high-tech warfare, the infrared detection system has developed to the third generation, which has the characteristics of large area array, high frame rate, better thermal resolution, multi-color detection capability and real-time signal processing capability. Antimonide InAs / GaSb and InAs / InAsSb type II superlattice infrared detectors are considered to be the most ideal choices for the preparation of third-generation infrared detectors because of their good ...

Claims

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