High-quality quantum dot fluorescent thin-film material and preparation method thereof

A technology of thin film materials and quantum dots, which is applied in the field of high-quality quantum dot fluorescent film materials and its preparation, can solve the problems that the yield, stability and mechanical properties of quantum dot fluorescent film materials cannot be guaranteed, and achieve good compactness, Strong operability and good stability

Active Publication Date: 2017-04-26
厦门世纳芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] (4) Electroluminescent devices, which are self-illuminating devices similar to OLEDs, can be made into flexible wearable devices, which have the advantages of low energy consumption, wide color gamut, and long life, but there are still technical problems at this stage not yet conquered
[0011] In addition, the yield, stability and mechanical properties of quantum dot fluorescent film materials prepared by existing technologies cannot be guaranteed

Method used

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  • High-quality quantum dot fluorescent thin-film material and preparation method thereof
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  • High-quality quantum dot fluorescent thin-film material and preparation method thereof

Examples

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Embodiment 1

[0044] Example 1 Preparation of high-quality quantum dot fluorescent film material using InP@ZnS@ZnS as quantum dots, the preparation method includes:

[0045] Step 1: Prepare a quantum dot solution;

[0046] Take 0.2mmol of tris(dimethylamino)phosphine and 2.2mmol of n-octylamine in the glove box and dissolve it in 2ml of octadecene. After dissolution, it will be recorded as solution A; take 1mmol of zinc stearate and dissolve in 10ml of octadecene, Dissolve it and record it as solution B; take 1mmol of sulfur powder and dissolve it in 10ml octadecene, and record it as solution C after dissolution.

[0047] Take 0.4mmol indium acetate, 1.5mmol myristic acid and 4g octadecene in a 25ml three-necked flask, heat to 100℃ and pump for 1h, then pass in argon for protection, then increase the temperature to 180℃ and then inject solution A, then Cool down to 162°C and hold for 15 minutes to grow InP quantum dots;

[0048] Continue to control the temperature to 145°C and inject 1.2ml of solu...

Embodiment 2

[0058] Embodiment 2 Using Mn:ZnSe as doped quantum dots to prepare high-quality quantum dot fluorescent film materials, the preparation method includes:

[0059] Step 1: Prepare a quantum dot solution;

[0060] Dissolve 0.05g manganese stearate in 5g octadecene and heat to 100°C to obtain solution A; take 0.36g zinc stearate, 0.04g stearic acid and 2.4g octadecene to obtain solution B;

[0061] Take 0.0237g of selenium powder, 5g of octadecene and 0.1g of oleylamine in a three-necked flask, heat to 100°C, pump for 20min, then pass in argon, heat up to 260°C until the selenium powder is dissolved, continue to heat up to 275°C for injection 1ml of solution A; further cooling to 260°C and holding for 4min to grow MnSe; then cooling to 240°C and injecting 0.5ml of solution B, reacting for 2h and then cooling to room temperature naturally to obtain Mn: ZnSe doped quantum dots.

[0062] Step 2: Preparation of polystyrene polymer-Mn: ZnSe doped quantum dot bulk material;

[0063] Take 100ml o...

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Abstract

The invention relates to a high-quality quantum dot fluorescent thin-film material and a preparation method thereof. The preparation method comprises the following steps: preparing a quantum dot solution; then preparing a polymer, adding the quantum dot solution into the polymer, carrying out placing in a mold, and carrying out cooling and curing so as to obtain a polymer-quantum dot bulk material; subjecting the polymer-quantum dot bulk material to mechanical cutting, and adjusting cutting parameters so as to be able to obtain a compact quantum dot fluorescent thin film with different thicknesses; and coating the prepared quantum dot fluorescent thin film on a thin-film protection layer so as to prepare the high-quality quantum dot fluorescent thin-film material. According to the invention, the prepared high-quality quantum dot fluorescent thin-film material has the advantages of high yield, good stability, uniform luminous intensity, wide color gamut, safety, environmental protection, controllable thickness, good compactness, high mechanical strength, etc; meanwhile, the method is simple and practical, has strong operability, and is applicable to mass preparation of quantum dot fluorescent thin films.

Description

Technical field [0001] The invention relates to the field of quantum dot materials, in particular to a high-quality quantum dot fluorescent film material and a preparation method thereof. Background technique [0002] As a new type of nano fluorescent material, quantum dots have good application prospects in the field of lighting and display. In terms of lighting, it has incomparable advantages such as long life, high yield, high color rendering index, and high luminous efficiency. In the field of display, its wide color gamut, long life, low cost, and continuously adjustable emission wavelength make quantum The dot display is even better than the current popular organic light emitting diode (OLED) display performance. [0003] For quantum dot displays, there are four main directions of development at this stage: (1) "On-chip" method, which is similar to white light LED packaging, using blue or violet LED as the substrate, and packaging quantum dots on it Floor; [0004] (2) "On-e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B37/12
CPCB32B37/1284
Inventor 魏居富周超李静
Owner 厦门世纳芯科技有限公司
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