Method and device for preparing high-purity silicon monoxide by medium-frequency induction heating way

Abstract

The invention relates to the technical field of preparation of high-purity silicon monoxide, in particular, relates to a method and device for preparing high-purity silicon monoxide by a medium-frequency induction heating way, and is characterized in that the preparation method comprises the following steps: 1, preparing raw materials: mixing high-purity silicon with the content of more than 99.5 wt% and silicon dioxide with the content of more than 99.5 wt% according to the weight ratio of 1:1; 2, carrying out medium-frequency induction heating; and 3, cooling to obtain the finished product; when the medium-frequency induction heating temperature is 1200-1600 DEG C, the molar ratio of the raw materials of high-purity silicon and silicon dioxide is adjusted, and the value of x in the product SiOx is a fixed value; but when the medium-frequency induction heating temperature is more than or equal to 1600 DEG C, the value of the molar ratio of the raw materials of high-purity silicon and silicon dioxide is controlled to be 0.88-1.2, and the value of x in the product SiOx is adjustable in a range of 0.89-1.10. Compared with the prior art, the method and the device have the advantages of high heating efficiency and stable equipment; products with different silicon-oxygen ratios are obtained by adjustment of the heating temperature and the ratio of the raw materials.

Description

technical field [0001] The invention relates to the technical field of preparation of high-purity silicon oxide, in particular to a method and equipment for preparing high-purity silicon oxide by means of medium-frequency induction heating. Background technique [0002] Due to its high activity, silicon dioxide micropowder can be used as a synthetic raw material for fine ceramics such as silicon nitride and silicon carbide; it is evaporated in a vacuum and coated on the surface of a metal mirror for optical instruments, which can be used as optical glass and semiconductor materials ; Silicon oxide can also be used to prepare lithium-ion battery anode materials with excellent performance. [0003] The preparation principle of silicon oxide is Si+SiO 2 → SiO, mix silicon powder and silicon dioxide at a molar ratio of 1:1, and heat under vacuum to obtain the product. This reaction is a reversible reaction. If the pressure is further reduced and the temperature is increased, t...

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Problems solved by technology

[0006] The utility model patent with the publication number CN2451567Y discloses a new type of silicon oxide production device, which consists of a high-alumina inner tube as a furnace, and an electric furnace wire is wound outside it, and a heat-insulation sleeve outside the high-alumina outer tube Layer, cooling by circulating water outside the tube, because it is still resistance heating, the tube diameter is limited by the temperature gradient, the production of materials prepared and the energy consumption of equipment are not economical

[0007] The above-mentioned existing equipment has improved the production rate to a certain extent, but because molybdenum wire is used for heating, it is extremely brittle after high-temperature vacuum-cooling, and the furnace body is easily damaged; in order to ensure the heating uniformity of the material during the heating process and the safety of the equipment The resistance heating furnace can only prepare kilograms in each batch, and the output still cannot meet the needs of the market for this type of material; the difference in x value in SiOx directly determines the performance of the material, which is of great significance for downstream applications, but the existing equipment cannot be effectively regulated, therefore, the current technology still needs to be further improved

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