Method and device for preparing high-purity silicon monoxide by medium-frequency induction heating way

An induction heating equipment, induction heating technology, applied in the direction of silicon oxide, chemical instruments and methods, pressure vessels used in chemical processes, etc. Equipment can not be effectively controlled and other problems, to achieve the effect of continuous and stable equipment, stable equipment, and low maintenance costs

Pending Publication Date: 2017-05-03
SHANGHAI SHANSHAN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The utility model patent with the publication number CN2451567Y discloses a new type of silicon oxide production device, which consists of a high-alumina inner tube as a furnace, and an electric furnace wire is wound outside it, and a heat-insulation sleeve outside the high-alumina outer tube Layer, cooling by circulating water outside the tube, because it is still resistance heating, the tube diameter is limited by the temperature gradient, the production of materials prepared and the energy consumption of equipment are not economical
[0007] The above-mentioned existing equipment has improved the production rate to a certain extent, but because molybdenum wire

Method used

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  • Method and device for preparing high-purity silicon monoxide by medium-frequency induction heating way
  • Method and device for preparing high-purity silicon monoxide by medium-frequency induction heating way
  • Method and device for preparing high-purity silicon monoxide by medium-frequency induction heating way

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Example Embodiment

[0040] Example 1

[0041] A method for preparing high-purity silicon oxide by means of medium-frequency induction heating, characterized in that the following preparation method is adopted:

[0042] 1. Raw material preparation: high-purity silicon with a content of >99.5wt% and silicon dioxide with a content >99.5wt% are mixed in a weight ratio of 1:1, pressed into a cake shape by a tablet press, and then dehydrated;

[0043] 2. Intermediate frequency induction heating: Put the cake-shaped mixed raw materials into the graphite crucible of intermediate frequency induction heating equipment, heat to 1200-2000°C under vacuum conditions, and keep the temperature constant for 3-5 hours to make the raw materials react and gradually sublimate; the intermediate frequency induction heating equipment The collector in introduces the sublimation gas into the cavity of the collector;

[0044] 3. Cooling to obtain the finished product: After 8-10 hours of constant temperature, the material...

Example Embodiment

[0053] Example 2

[0054] see figure 2 and image 3 , this example is the intermediate frequency induction heating equipment matched with the preparation method in Example 1, comprising a vacuum furnace shell 6, an induction coil 8, a thermal insulation layer 9, a graphite crucible 10, a collector, a furnace cover 15, and a water cooling system 14 , an intermediate frequency power supply 4, an intermediate frequency feeder 5, a vacuum pumping system, and a temperature measuring system, characterized in that the included angle between the central axis of the vacuum furnace shell 6 and the installation ground of the vacuum furnace shell 6 is 1 to 10 °; At least the open end side of the graphite crucible 10 located at the lower part of the central axis of the graphite crucible 10 is provided with a graphite baffle 11; the end face of the open end of the graphite crucible 10 is covered with a collector 12, and the collector 12 is a round table Cylindrical, and the diameter of t...

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Abstract

The invention relates to the technical field of preparation of high-purity silicon monoxide, in particular, relates to a method and device for preparing high-purity silicon monoxide by a medium-frequency induction heating way, and is characterized in that the preparation method comprises the following steps: 1, preparing raw materials: mixing high-purity silicon with the content of more than 99.5 wt% and silicon dioxide with the content of more than 99.5 wt% according to the weight ratio of 1:1; 2, carrying out medium-frequency induction heating; and 3, cooling to obtain the finished product; when the medium-frequency induction heating temperature is 1200-1600 DEG C, the molar ratio of the raw materials of high-purity silicon and silicon dioxide is adjusted, and the value of x in the product SiOx is a fixed value; but when the medium-frequency induction heating temperature is more than or equal to 1600 DEG C, the value of the molar ratio of the raw materials of high-purity silicon and silicon dioxide is controlled to be 0.88-1.2, and the value of x in the product SiOx is adjustable in a range of 0.89-1.10. Compared with the prior art, the method and the device have the advantages of high heating efficiency and stable equipment; products with different silicon-oxygen ratios are obtained by adjustment of the heating temperature and the ratio of the raw materials.

Description

technical field [0001] The invention relates to the technical field of preparation of high-purity silicon oxide, in particular to a method and equipment for preparing high-purity silicon oxide by means of medium-frequency induction heating. Background technique [0002] Due to its high activity, silicon dioxide micropowder can be used as a synthetic raw material for fine ceramics such as silicon nitride and silicon carbide; it is evaporated in a vacuum and coated on the surface of a metal mirror for optical instruments, which can be used as optical glass and semiconductor materials ; Silicon oxide can also be used to prepare lithium-ion battery anode materials with excellent performance. [0003] The preparation principle of silicon oxide is Si+SiO 2 → SiO, mix silicon powder and silicon dioxide at a molar ratio of 1:1, and heat under vacuum to obtain the product. This reaction is a reversible reaction. If the pressure is further reduced and the temperature is increased, t...

Claims

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Application Information

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IPC IPC(8): C01B33/113B01J19/24B01J19/00B01J3/03
CPCB01J3/03B01J19/0013B01J19/0053B01J19/24B01J2219/00132C01B33/113C01P2002/72C01P2006/80Y02P20/10
Inventor 马飞沈龙丁晓阳葛传长
Owner SHANGHAI SHANSHAN TECH CO LTD
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