Preparation method of Li-doped ZnO crystal thin film

A thin film and crystal technology, applied in the field of preparation of p-type ZnO crystal thin film, can solve problems such as difficult practice of large-scale production, limitation of nano-device application, time-consuming reaction, etc., to achieve good light-transmitting and conductive properties, surface The effect of good appearance and low cost

Inactive Publication Date: 2017-05-17
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the solid phase synthesis method not only needs to consume a lot of reaction time and very high temperature, but also the obtained product particles are large and uneven
Methods such as magnet

Method used

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  • Preparation method of Li-doped ZnO crystal thin film
  • Preparation method of Li-doped ZnO crystal thin film
  • Preparation method of Li-doped ZnO crystal thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Weigh 2.46g of Zn(CH 3 COO) 2 2H 2 O was dissolved in 100ml of ethylene glycol methyl ether solvent, 10g of citric acid was added, and after stirring in a water bath at 70°C for 2 hours, a uniform colloidal solution was obtained, and the solution was left to stand for 24 hours to obtain a sol; a glass sheet was used as a substrate, The substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 10 minutes, then rinsed with absolute ethanol, and then dried on a heating platform; Coating. Slowly dip the glass slide into the sol at a descending speed of 3000mm / s, and use the sol to have a certain viscosity to make the wet sol adhere to the glass slide. Then the glass slide is slowly pulled out of the wet gel by a constant speed motor at a pulling speed of 1333mm / s. The pulling height is 90mm, and the residence time is 480s. The wet gel is evenly distributed by gravity. on both sides of the glass slide. Repeat the above lifting process 2 t...

Embodiment 2

[0026] Weigh 2.46g of Zn(CH 3 COO) 2 2H 2 Dissolve O in 100ml of ethylene glycol methyl ether solvent, add 10g of citric acid, stir in a water bath at 70°C for 1h, and then press Li + accounted for Zn 2+ Add LiCl at a molar ratio of 1% and continue to stir for 2 hours to obtain a uniform colloidal solution. Let the solution stand for 24 hours to obtain a sol; select a glass sheet as the substrate, and place the substrate in acetone, absolute ethanol and deionized water in sequence. Ultrasonic cleaning for 10 minutes, followed by rinsing with absolute ethanol, and drying on a heating platform; the obtained sol was coated on the cleaned substrate material by dipping and pulling method. Slowly dip the glass slide into the sol at a descending speed of 3000mm / s, and use the sol to have a certain viscosity to make the wet sol adhere to the glass slide. Then the glass slide is slowly pulled out of the wet gel by a constant speed motor at a pulling speed of 1333mm / s. The pulling h...

Embodiment 3

[0028] Weigh 2.46g of Zn(CH 3 COO) 2 2H 2 Dissolve O in 100ml of ethylene glycol methyl ether solvent, add 10g of citric acid, stir in a water bath at 70°C for 1h, and then press Li + accounted for Zn 2+ Add LiCl at a molar ratio of 2%, and continue to stir for 2 hours to obtain a uniform colloidal solution. The solution is left to stand for 24 hours to obtain a sol; use a glass sheet as the substrate, and place the substrate in acetone, absolute ethanol and deionized water in sequence. Ultrasonic cleaning for 10 minutes, followed by rinsing with absolute ethanol, and drying on a heating platform; the obtained sol was coated on the cleaned substrate material by dipping and pulling method. Slowly dip the glass slide into the sol at a descending speed of 3000mm / s, and use the sol to have a certain viscosity to make the wet sol adhere to the glass slide. Then the glass slide is slowly pulled out of the wet gel by a constant speed motor at a pulling speed of 1333mm / s. The pull...

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Abstract

The invention relates to a preparation method of an Li-doped p type ZnO crystal thin film, and belongs to the technical field of semiconductor materials. The preparation method comprises the following steps: dissolving Zn(CH3COO)2.2H2O into a 2-methoxyethanol solvent; adding citric acid; stirring in a water bath and adding LiCl; continually stirring to obtain a uniform colloidal solution; enabling the solution obtain sol to stand, so as to obtain sol; plating a film on a washed and dried glass sheet by adopting the obtained sol through a dipping-lifting method, i.e., slowly immersing the glass sheet into the sol, attaching the glass sheet to the wet sol by using certain viscosity of the sol, slowly and stably lifting the glass sheet from the wet sol at a constant lifting speed through a constant-speed motor, and uniformly distributing the wet sol on two faces of the glass sheet by using the action of gravity; finally, raising the temperature to 400 DEG C to 600 DEG C and carrying out heat treatment on the thin film in air, so as to obtain the Li-doped ZnO thin film.

Description

technical field [0001] The invention relates to a preparation method of a Li-doped p-type ZnO crystal thin film, belonging to the technical field of semiconductor materials. Background technique [0002] At room temperature, the static band width of ZnO is 3.37eV, and the exciton binding energy is 60meV. It is an important II-VI semiconductor material. It is chemically stable, non-toxic, and has good electrical properties and biocompatibility. It is widely used in gas sensors, photodetectors, light-emitting diodes, varistors, piezoelectric devices, etc. It has great application potential in the field of short-wavelength optoelectronic devices, and has gradually become a hot spot in the research of electronic component materials. . [0003] The preparation of controllable n-type and p-type ZnO transparent crystal thin films is the key to realize the application of ZnO-based optoelectronic devices. At present, the research on n-type ZnO crystal thin films has been relatively...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B5/02C30B28/00
CPCC30B29/16C30B5/02C30B28/00
Inventor 王茂华孙尉杰
Owner CHANGZHOU UNIV
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