Super-hydrophobic microstructure and manufacturing method thereof
A super-hydrophobic micro-structure technology, applied in the field of materials, can solve problems such as not reaching the super-hydrophobic standard
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Embodiment 1
[0039] 1) Hydrophilic treatment of silicon substrate
[0040] (1) Cut the silicon wafer into 10mm*20mm size.
[0041] (2) The conditions of organic cleaning are: acetone ultrasonic cleaning for 5-15 minutes, absolute ethanol ultrasonic cleaning for 5-15 minutes, and deionized water ultrasonic cleaning for 5-15 minutes.
[0042] (3) Concentrated sulfuric acid and hydrogen peroxide were mixed in a volume ratio of 3:1, heated continuously at 85°C for 60 minutes, and finally rinsed with deionized water.
[0043] 2) Using a gas-liquid interface assembly method to complete the self-assembly of a polystyrene ball with a diameter of 2000 nm on the silicon surface to form a single-layer polystyrene ball mask.
[0044] 3) Using inductively coupled plasma to etch the colloidal crystal grain mask. The etching conditions are: SF 6 The flow rate is 60sccm, O 2 The flow rate is 5sccm, C 4 F 8 The flow rate is 80sccm, the ICP power is 800W, the RF power is 35W, the etching temperature is 10°C, the cha...
Embodiment 2
[0050] 1) Hydrophilic treatment of silicon substrate
[0051] (1) Cut the silicon wafer into 20mm*20mm size.
[0052] (2) The conditions of organic cleaning are: acetone ultrasonic cleaning for 5-15 minutes, absolute ethanol ultrasonic cleaning for 5-15 minutes, and deionized water ultrasonic cleaning for 5-15 minutes.
[0053] (3) Concentrated sulfuric acid and hydrogen peroxide were mixed in a volume ratio of 3:1, heated continuously at 85°C for 60 minutes, and finally rinsed with deionized water.
[0054] 2) The self-assembly of polystyrene balls with a diameter of 500 nm on the silicon surface is completed by the natural sedimentation method to form a single-layer polystyrene ball mask.
[0055] 3) Using BOSCH process in inductively coupled plasma etching to etch the colloidal crystal grain mask. The etching conditions are: SF 6 The flow rate is 150sccm, O 2 The flow rate is 30sccm, the time is 6s; the passivation condition is: C 4 F 8 The flow rate is 50sccm, the time is 5s, the I...
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