Acceleration sensor and manufacturing method thereof

An acceleration sensor, axial acceleration technology, applied in the measurement of acceleration, speed/acceleration/shock measurement, manufacturing tools, etc., can solve the problem of low sensitivity, achieve the effect of improving sensitivity, reducing parasitic capacitance, and widening the operating temperature range

Active Publication Date: 2017-06-09
华景传感科技(无锡)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Embodiments of the present invention provide an acceleration sensor and a manufacturing method thereof, which are used to solve the problem of low sensitivity of sensitive capacitors in the z-axis in the prior art

Method used

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  • Acceleration sensor and manufacturing method thereof
  • Acceleration sensor and manufacturing method thereof

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Embodiment 1

[0034] figure 1 A method of manufacturing an acceleration sensor according to an aspect of the present application is shown. The manufacturing method can be used to manufacture sensors that only measure z-axis acceleration, and can also be used to manufacture sensors that measure three-axis axial acceleration.

[0035] In step S1, at least one cavity is etched on the single crystal silicon substrate; wherein, the cavity includes: a first cavity providing a movement space for a vertical acceleration sensitive capacitor.

[0036] Here, the method of etching at least one cavity on the single crystal silicon substrate can be first coated with photoresist on the single crystal silicon substrate, and then according to the preset cavity position pattern, the photoresist is etched performing photolithography exposure processing and etching processing all cavities including the first cavity.

[0037] Alternatively, the manner of etching at least one cavity on the single crystal silic...

Embodiment 2

[0061] The difference from step S1 in Embodiment 1 is that each cavity containing the stopper is etched on the single crystal silicon substrate; wherein, the stopper in the first cavity is located at the first mass The first mass block corresponding to the pattern 11 is located at a position with a lighter mass on one side of the torsion beam corresponding to the torsion beam pattern 12 .

[0062] For example, in the structural pattern of the vertical axial acceleration sensitive capacitor, the torsion beam pattern 12 bisects the first mass block pattern 11, and the part corresponding to the lighter mass in the first mass block pattern 11 contains a hollow area, the The stop portion in the first cavity is provided corresponding to the hollow area.

[0063]The difference from step S2 in Embodiment 1 is that during the etching of the sensitive device layer on the corresponding cavity according to the preset structural pattern including the vertical axial acceleration sensitive c...

Embodiment 3

[0067] Such as Figure 4 , 7 As shown in and 8, another embodiment of the present invention is an acceleration sensor manufactured according to the above manufacturing method.

[0068] The acceleration sensor may be a sensor that only measures vertical (z-axis) acceleration, or a sensor that includes three-axis axial acceleration.

[0069] The acceleration sensor includes: a single crystal silicon substrate 100 , a sensitive device layer 500 , a silicon oxide film 408 and a metal electrode 200 .

[0070] The single crystal silicon substrate 100 includes at least one cavity, wherein the cavity includes: a first cavity 102 providing a space for a vertical acceleration sensitive capacitor.

[0071] Here, the number of cavities is related to the direction of acceleration that the acceleration sensor can sense. If the sensor is a z-axis acceleration sensor, it may only include the first cavity 102 . If the sensor is a three-axis acceleration sensor, the cavity includes the firs...

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Abstract

The invention provides an acceleration sensor and a manufacturing method thereof. The manufacturing method comprises the following steps: etching a first cavity for providing a space to a z-axis acceleration sensitive capacitor on a monocrystalline silicon substrate; generating a silicon oxide layer on the monocrystalline silicon substrate etched with the cavity; covering the monocrystalline silicon substrate with a monocrystalline silicon base plate by adopting a silicon-silicon bonding manner after the silicon oxide layer is generated, and thinning to form a sensing device layer; forming a sensing capacitor containing the z-axis acceleration sensing capacitor by using the sensing device layer; generating a silicon oxide film on the sensing device layer, corroding the silicon oxide film except the silicon oxide film at a cantilever beam in the z-axis acceleration sensing capacitor structure; depositing a metal electrode connected with each sensing capacitor on the sensing device layer; and etching the sensing device layer disposed on a corresponding cavity according to a preset structural pattern containing the vertical axial acceleration sensing capacitor. By adopting the acceleration sensor and the manufacturing method thereof, the problem that the z-axis acceleration sensor is low in sensitivity is solved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an acceleration sensor and a manufacturing method thereof. Background technique [0002] MEMS (Micro Electro Mechanical Systems) accelerometers are accelerometers manufactured using MEMS technology. Due to the use of MEMS technology, its size is greatly reduced, and it has the advantages of small size, light weight, and low energy consumption. It is widely used in military, automobile industry, consumer electronics and other fields. [0003] Among them, the capacitive acceleration sensor is more commonly used, and its basic working principle is that the sensitive mass is supported on the base by means of a suspension device, and is connected with movable electrodes at the same time. The movable electrode and the fixed electrode form one or more sensitive capacitors, and the inertial force generated by the acceleration to be measured acting on the sensitive mass causes the plate gap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81C3/00B81B3/00B81B5/00G01P15/125
CPCB81B3/0021B81B3/0051B81B5/00B81C1/0015B81C1/00198B81C1/0065B81C3/00G01P15/125
Inventor 缪建民郭帅
Owner 华景传感科技(无锡)有限公司
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