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Gallium arsenide photoconductive switch preparation method

A photoconductive switch and gallium arsenide technology, which is applied in the field of preparation of gallium arsenide photoconductive switches, can solve problems such as heat generation, damage to photoconductive switches, and large discharge current, and achieve the effects of improving bonding force, reducing volume, and reducing shadows

Inactive Publication Date: 2017-06-09
有研科技集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, during the ultra-short pulse discharge process, the discharge current is large, and if there is a defect in the photoconductive switch electrode, it will often cause local heating and damage the photoconductive switch.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A gallium arsenide double-polished wafer with crystal orientation is selected, the resistivity is ≥10Ω·cm, the thickness is 0.6mm, and the diameter is 100mm. Clean the gallium arsenide surface with acetone to remove surface impurities. Select UV positive resist AR-P4340 photoresist, coat a layer of transparent and uniform photoresist with a thickness of 1 μm on the surface of gallium arsenide, and then bake and heat it at 70° C. for 4 minutes to cure the photoresist. After cooling to room temperature, select a suitable exposure mold to expose it, then bake it again at 70°C for 4 minutes, cool to room temperature, and then develop to peel off the photoresist at the position where the film needs to be coated. Then, Ti / Ni / Au films were plated by magnetron sputtering as electrodes. Finally, a debonding process is performed to remove the photoresist at the mask position. Finally, a small chip with an appearance size of 13mm×10mm was cut out with a dicing machine, and the ...

Embodiment 2

[0036] A gallium arsenide double-polished wafer with crystal orientation is selected, the resistivity is ≥10Ω·cm, the thickness is 1mm, and the diameter is 100mm. Clean the gallium arsenide surface with acetone to remove surface impurities. Select UV positive resist AR-P4340 photoresist, coat a layer of transparent and uniform photoresist with a thickness of 2 μm on the surface of gallium arsenide, and then bake and heat it at 80° C. for 3 minutes to cure the photoresist. After cooling to room temperature, select a suitable exposure mold to expose it, then bake it again at 80°C for 3 minutes, cool to room temperature, and then develop to peel off the photoresist at the position where the film needs to be coated. Then, Ti / Ni / Au films were plated by magnetron sputtering as electrodes. The coated gallium arsenide is debonded, and the photoresist at the mask position is removed. Finally, a small chip with an appearance size of 13mm×10mm was cut out with a dicing machine, and th...

Embodiment 3

[0039] A gallium arsenide double-polished wafer with crystal orientation is selected, the resistivity is ≥10Ω·cm, the thickness is 1mm, and the diameter is 100mm. Clean the gallium arsenide surface with acetone to remove surface impurities. Select UV positive resist AR-P4340 photoresist, coat a layer of transparent and uniform photoresist with a thickness of 4 μm on the surface of gallium arsenide, and then bake and heat it at 90° C. for 2 minutes to cure the photoresist. After cooling to room temperature, select a suitable exposure mold to expose it, then bake it again at 90°C for 2 minutes, cool to room temperature, and then develop to peel off the photoresist at the position where the film needs to be coated. Then, Ti / Ni / Au films were plated by magnetron sputtering as electrodes. The coated gallium arsenide is debonded, and the photoresist at the mask position is removed. Finally, a small chip with an appearance size of 13mm×10mm was cut out with a dicing machine, and th...

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Abstract

The invention relates to a gallium arsenide photoconductive switch preparation method. The gallium arsenide photoconductive switch preparation method comprises steps that (1) a surface of gallium arsenide is cleaned; (2) a layer of photoresist is coated on the surface of the gallium arsenide; (3) the photoresist is heated and cured; (4) exposure is carried out after cooling, and baking is carried out after the exposure and before development; (5) the development is carried out after the cooling, and the photoresist on a position requiring the coating is stripped; (6) a coated film is used as an electrode; (7)peptization processing is carried out to remove the photoresist on a mask position; (8) a dicing saw is used to dice a wafer of required size; (9) stress relief annealing processing is carried out quickly in a fast annealing furnace after cleaning. By adopting a semiconductor photolithography technology, the electrode is prepared, and the shadows and the burr fins of the edges of the electrode are reduced, and therefore electric field enhancement effect is relieved, and under a condition of not changing raw materials and other technologies, the voltage withstand performance of the working of the gallium arsenide photoconductive switch is improved. By adopting the fast annealing technology, the cohesive force between the electrode and the gallium arsenide is improved, and heterogeneous interface defects are eliminated, and therefore the performance of the gallium arsenide is improved.

Description

technical field [0001] The invention belongs to the technical field of photoconductive switches, in particular to a preparation method of gallium arsenide photoconductive switches. Background technique [0002] The increasingly widespread application of ultrashort laser pulse technology has promoted the development of photoconductive switches. Compared with traditional switches, photoconductive switches have the advantages of simple structure, fast response (nanoseconds to picoseconds), no trigger jitter, low parasitic inductance and capacitance, good photoelectric isolation, and compact structure. In environments with high power and high noise, such as high-speed and high-power pulse sources required for high- and low-voltage broadband pulses and microwave pulses, semiconductor laser diode drivers, ignition devices, picosecond pulse laser detectors, and new ultra-wideband radars Wait. [0003] The resistivity of semiconductor gallium arsenide GaAs material is as high as 1...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/08H01L31/0224
CPCH01L31/0224H01L31/08H01L31/184H01L31/1864Y02P70/50
Inventor 周昊张庆猛唐群杨志民
Owner 有研科技集团有限公司
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