Gallium arsenide photoconductive switch preparation method
A photoconductive switch and gallium arsenide technology, which is applied in the field of preparation of gallium arsenide photoconductive switches, can solve problems such as heat generation, damage to photoconductive switches, and large discharge current, and achieve the effects of improving bonding force, reducing volume, and reducing shadows
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Example Embodiment
[0032] Example 1
[0033] Choose crystal orientation The gallium arsenide double polished sheet has a resistivity ≥10Ω·cm, a thickness of 0.6mm and a diameter of 100mm. Clean the gallium arsenide surface with acetone to remove surface impurities. Choose the UV positive AR-P4340 photoresist, coat a layer of transparent and uniform 1μm thick photoresist on the surface of gallium arsenide, and then bake and heat it at 70℃ for 4min to cure the photoresist. After cooling to room temperature, select a suitable exposure mold to expose it, and then bake it again at 70°C for 4 minutes, cool to room temperature, and then develop, and peel off the photoresist at the position where the coating is needed. Then, magnetron sputtering Ti / Ni / Au film is used as the electrode. Finally, a de-glue process is performed to remove the photoresist at the mask position. Finally, a small chip with an appearance size of 13mm×10mm was scribed with a dicing machine, and the electrode gap was 1mm. After c...
Example Embodiment
[0035] Example 2
[0036] Choose crystal orientation The gallium arsenide double polished sheet, the resistivity is ≥10Ω·cm, the thickness is 1mm, and the diameter is 100mm. Clean the gallium arsenide surface with acetone to remove surface impurities. Choose the UV positive AR-P4340 photoresist, coat a layer of transparent and uniform 2μm thick photoresist on the surface of gallium arsenide, and then bake and heat it at 80℃ for 3min to cure the photoresist. After cooling to room temperature, select a suitable exposure mold to expose it, and then bake it again at 80°C for 3 minutes, cool to room temperature, and then develop, and peel off the photoresist at the position where the coating is needed. Then, magnetron sputtering Ti / Ni / Au film is used as the electrode. The gallium arsenide that has been plated is processed to remove the photoresist at the mask position. Finally, a small chip with an appearance size of 13mm×10mm was scribed with a dicing machine, and the electrode g...
Example Embodiment
[0038] Example 3
[0039] Choose crystal orientation The gallium arsenide double polished sheet, the resistivity is ≥10Ω·cm, the thickness is 1mm, and the diameter is 100mm. Clean the gallium arsenide surface with acetone to remove surface impurities. Choose the UV positive AR-P4340 photoresist, coat a layer of transparent and uniform 4μm thick photoresist on the surface of gallium arsenide, and then bake and heat it at 90°C for 2 minutes to cure the photoresist. After cooling to room temperature, select a suitable exposure mold to expose it, then bake it again at 90°C for 2 minutes, cool it to room temperature, and then develop, and peel off the photoresist at the position where the coating is needed. Then, magnetron sputtering Ti / Ni / Au film is used as the electrode. The gallium arsenide that has been plated is processed to remove the photoresist at the mask position. Finally, a small chip with an appearance size of 13mm×10mm was scribed with a dicing machine, and the electr...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Resistivity | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap