Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of polyfluorene-inorganic semiconductor compound OLED display material and preparation method

An inorganic semiconductor and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, luminescent materials, etc., can solve the problems of easy aggregation, easy aging of film formation, etc., and achieve the effect of not easy to crystallize, hard to aggregate, and to improve stability.

Active Publication Date: 2019-01-25
CHIFENG TUOJIA PHOTOELECTRIC CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But it also has some problems, mainly because it is easy to aggregate in the solid state, and the film is easy to age, which limits its application.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of polyfluorene-inorganic semiconductor compound OLED display material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Add 50kg of monomeric fluorene or its derivatives, 25kg of boron trifluoride diethyl ether, 2kg of nickel chloride, 20kg of zinc powder and 3kg of bipyridine into the reactor, under the protection of high-purity nitrogen, stir vigorously, and slowly raise the temperature to 85°C. After reacting for 13 hours, the crude product was introduced into a mixed solvent of hydrochloric acid and methanol with a volume concentration of 20%, and then the precipitate obtained by filtration was washed three times with methanol and distilled water successively, and dried in vacuum. The resulting product was precipitated with chloroform and methanol, and extracted to remove small molecules to obtain fluorinated polyfluorene.

[0036] Prepare a sodium hydroxide solution with a mass concentration of 20% and a zinc nitrate solution with a mass concentration of 40%, add fluorinated polyfluorene to 150kg of sodium hydroxide solution, stir to disperse, and add 1kg of ethylenediaminetetraacetic ...

Embodiment 2

[0040] Add 55kg of monomer fluorene or its derivatives, 20kg of boron trifluoride diethyl ether, 2kg of nickel chloride, 20kg of zinc powder and 3kg of bipyridine into the reactor, under the protection of high-purity nitrogen, stir vigorously, and slowly raise the temperature to 90°C. After reacting for 12 h, the crude product was introduced into a mixed solvent of hydrochloric acid and methanol with a volume concentration of 20%, and then the precipitate obtained by filtration was washed three times with methanol and distilled water successively, and dried in vacuum. The resulting product was precipitated with chloroform and methanol, and extracted to remove small molecules to obtain fluorinated polyfluorene.

[0041] Prepare a sodium hydroxide solution with a mass concentration of 20% and a bismuth nitrate solution with a mass concentration of 40%, add fluorinated polyfluorene to 180kg of sodium hydroxide solution, stir and disperse, and add 1.5kg of ethylene glycol bis(2- a...

Embodiment 3

[0044] Add 55kg of monomer fluorene or its derivatives, 10kg of boron trifluoride diethyl ether, 2kg of nickel chloride, 30kg of zinc powder and 3kg of bipyridine into the reactor, under the protection of high-purity nitrogen, stir vigorously, and slowly raise the temperature to 95°C. After reacting for 11 h, the crude product was introduced into a mixed solvent of hydrochloric acid and methanol with a volume concentration of 20%, and then the precipitate obtained by filtration was washed three times with methanol and distilled water successively, and dried in vacuum. The resulting product was precipitated with chloroform and methanol, and extracted to remove small molecules to obtain fluorinated polyfluorene.

[0045] Prepare a sodium hydroxide solution with a mass concentration of 20% and a zinc nitrate solution with a mass concentration of 40%, add fluorinated polyfluorene to 160kg of sodium hydroxide solution, stir to disperse, and add 2kg of ethylenediaminetetraacetic acid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of optoelectronic materials, in particular to a polyfluorene-inorganic semiconductor composite OLED display material and a preparation method thereof. After polyfluorene is fluorinated, it undergoes complexation reaction with soluble nitrate of inorganic semiconductor materials, and then undergoes hydrothermal reaction with aqueous solution of thiourea or Na2S to form polyfluorene dispersed by ZnS, CdS, PbS or BiS semiconductors, which can greatly Improving dispersion stability and charge transferability provides technical support for large-scale, low-cost, and large-area preparation of flexible display materials.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to the improvement of OLED electroluminescent materials, in particular to a polyfluorene-inorganic semiconductor composite OLED display material and its preparation. Background technique [0002] OLED, that is, Organic Light-Emitting Diode (Organic Light-Emitting Diode), has been widely used in MP3 players since 2003 because of its thinness and power-saving characteristics. OLED self-illumination, simple structure, ultra-thin, fast response, wide viewing angle, low power consumption and flexible display, has been given the title of "dream display". In addition, its production equipment investment is much less than that of TFT-LCD. It has won the favor of more manufacturers and has become the main force of the third-generation display devices in the field of display technology. At present, the two main application markets of OLED are display and lighting, among which the devel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/06H01L51/54
CPCC09K11/06C09K2211/188H10K85/111H10K85/30H10K85/381
Inventor 陈庆曾军堂王镭迪
Owner CHIFENG TUOJIA PHOTOELECTRIC CO LTD