Cadmium telluride thin-film solar cell and manufacturing method
A solar cell and cadmium telluride technology, applied in the field of solar cells, can solve the problems that cadmium telluride thin-film solar cells cannot be made into light-transmitting thin-film solar cells, cannot form ohmic contacts, and affect the performance of thin-film cells, etc., and achieve improvement Effects of open circuit voltage, low sheet resistance, and improved fill factor
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[0046] The invention also discloses a method for preparing a cadmium telluride thin film solar cell, comprising the following steps
[0047] S1, preparing the front substrate 1;
[0048] S2, sequentially prepare a barrier layer 2, a front electrode layer 3, a buffer layer 4, an n-type semiconductor layer 5, a p-type semiconductor layer 6, and a back electrode layer 9 on the front substrate 1 along a direction away from the front substrate 1, the back electrode Layer 9 includes a zinc sulfide film layer 91, a silver or silver alloy or gold or gold alloy film layer 92 and a transparent conductive oxide film layer 93, the zinc sulfide film layer 91 is located on the p-type semiconductor layer 6, the silver or silver The alloy or gold or gold alloy film layer 92 covers the zinc sulfide film layer 91 , and the transparent conductive oxide film layer 93 covers the silver or silver alloy or gold or gold alloy film layer 92 .
[0049] The back electrode layer of traditional cadmium t...
Embodiment 1
[0052] Such as image 3 As shown, soda-lime glass is used as the front substrate 1, and a 100nm silicon oxide layer is formed on the front substrate 1 as the barrier layer 2; then a 400nm cadmium stannate film layer is formed on the silicon oxide layer as the transparent conductive layer 3; then Form a 30nm tin oxide film layer on the cadmium stannate film layer as the buffer layer 4; then form an 80nm cadmium sulfide film layer on the tin oxide film layer as the n-type semiconductor layer 5; then form a thickness of 2um on the cadmium sulfide film layer The cadmium telluride film layer is used as the p-type semiconductor layer 6; then these formed film layers are heat-treated in the environment of cadmium chloride, the heat treatment temperature is 450 ° C, and the heat treatment time is 20 minutes; then, on the cadmium telluride film layer Form a 30nm p-type cadmium sulfide layer 7; then form an 80nm copper-doped cadmium telluride film layer on the p-type cadmium sulfide lay...
Embodiment 2
[0054] Soda-lime glass is used as the front substrate 1, and a 100nm aluminum-doped silicon oxide layer is formed on the front substrate 1 as a barrier layer 2; then a 400nm cadmium stannate film layer is formed on the aluminum-doped silicon oxide layer as a transparent conductive layer 3; then form a 30nm tin oxide film layer on the cadmium stannate film layer as the buffer layer 4; then form a 60nm cadmium zinc sulfide film layer on the tin oxide film layer as the n-type semiconductor layer 5; then form the cadmium zinc sulfide film layer on the tin oxide film layer A cadmium telluride film layer with a thickness of 2um is formed on it as the p-type semiconductor layer 6; then these formed film layers are subjected to heat treatment in the environment of cadmium chloride, the heat treatment temperature is 390°C, and the heat treatment time is 30min; Form a 40nm p-type cadmium sulfide layer 7 on the cadmium sulfide layer; then on the p-type cadmium sulfide layer, a 30nm zinc s...
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