A kind of cadmium telluride thin film solar cell and preparation method thereof
A technology of solar cells and cadmium telluride, which is applied in the field of solar cells, can solve problems such as the inability to form ohmic contacts, the inability of cadmium telluride thin-film solar cells to be made into light-transmitting thin-film solar cells, and the impact on the performance of thin-film cells to achieve low Sheet resistance, increase in open circuit voltage, and increase the effect of fill factor
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[0046] The invention also discloses a method for preparing a cadmium telluride thin film solar cell, comprising the following steps
[0047] S1, preparing the front substrate 1;
[0048] S2, sequentially prepare a barrier layer 2, a front electrode layer 3, a buffer layer 4, an n-type semiconductor layer 5, a p-type semiconductor layer 6, and a back electrode layer 9 on the front substrate 1 along a direction away from the front substrate 1, the back electrode Layer 9 includes a zinc sulfide film layer 91, a silver or silver alloy or gold or gold alloy film layer 92 and a transparent conductive oxide film layer 93, the zinc sulfide film layer 91 is located on the p-type semiconductor layer 6, the silver or silver The alloy or gold or gold alloy film layer 92 covers the zinc sulfide film layer 91 , and the transparent conductive oxide film layer 93 covers the silver or silver alloy or gold or gold alloy film layer 92 .
[0049] The back electrode layer of traditional cadmium t...
Embodiment 1
[0052] Such as image 3 As shown, soda-lime glass is used as the front substrate 1, and a 100nm silicon oxide layer is formed on the front substrate 1 as the barrier layer 2; then a 400nm cadmium stannate film layer is formed on the silicon oxide layer as the transparent conductive layer 3; then Form a 30nm tin oxide film layer on the cadmium stannate film layer as the buffer layer 4; then form an 80nm cadmium sulfide film layer on the tin oxide film layer as the n-type semiconductor layer 5; then form a thickness of 2um on the cadmium sulfide film layer The cadmium telluride film layer is used as the p-type semiconductor layer 6; then these formed film layers are heat-treated in the environment of cadmium chloride, the heat treatment temperature is 450 ° C, and the heat treatment time is 20 minutes; then, on the cadmium telluride film layer Form a 30nm p-type cadmium sulfide layer 7; then form an 80nm copper-doped cadmium telluride film layer on the p-type cadmium sulfide lay...
Embodiment 2
[0054] Soda-lime glass is used as the front substrate 1, and a 100nm aluminum-doped silicon oxide layer is formed on the front substrate 1 as a barrier layer 2; then a 400nm cadmium stannate film layer is formed on the aluminum-doped silicon oxide layer as a transparent conductive layer 3; then form a 30nm tin oxide film layer on the cadmium stannate film layer as the buffer layer 4; then form a 60nm cadmium zinc sulfide film layer on the tin oxide film layer as the n-type semiconductor layer 5; then form the cadmium zinc sulfide film layer on the tin oxide film layer A cadmium telluride film layer with a thickness of 2um is formed on it as the p-type semiconductor layer 6; then these formed film layers are subjected to heat treatment in the environment of cadmium chloride, the heat treatment temperature is 390°C, and the heat treatment time is 30min; Form a 40nm p-type cadmium sulfide layer 7 on the cadmium sulfide layer; then on the p-type cadmium sulfide layer, a 30nm zinc s...
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