P-i-n-type antimony selenide thin-film solar cell

A technology of solar cells and antimony selenide, which is applied in the field of solar cells, can solve problems such as low performance and interface defects of antimony selenide solar cells, achieve the effects of reducing high recombination rate, reducing lattice mismatch degree, and broad application prospects

Active Publication Date: 2017-06-27
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a p-i-n type antimony selenide solar cell to solve the problem that the cu...

Method used

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  • P-i-n-type antimony selenide thin-film solar cell

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Embodiment 1

[0022] Such as figure 1 As shown, the structure of the p-i-n type solar cell provided in this embodiment from top to bottom is (along the light direction) glass substrate 11, ITO transparent conductive top electrode layer 12, p-type antimony selenide semiconductor layer 13, intrinsic ZnO semiconductor i-type layer 14 , n-type Ag-doped antimony selenide semiconductor layer 15 and Au bottom electrode layer 16 .

[0023] Concrete preparation steps are as follows:

[0024] (1) Clean the substrate

[0025] Using soda-lime glass as the substrate, the glass was first soaked in electronic cleaner solution for 15 min, then it was taken out, rinsed with plenty of deionized water, and finally blown dry with nitrogen.

[0026] (2) Deposition of ITO transparent conductive top electrode layer

[0027] Use magnetron sputtering technology to deposit ITO transparent conductive top electrode layer (indium tin oxide semiconductor transparent conductive film): fix the cleaned glass substrate o...

Embodiment 2

[0037] Such as figure 2 As shown, the structure of the p-i-n type solar cell provided by this embodiment from top to bottom is (along the light direction BZO top electrode layer 21, p-type antimony selenide semiconductor layer 22, intrinsic antimony selenide semiconductor i-type layer 23. An n-type Cu-doped antimony selenide semiconductor layer 24 , a Mo bottom electrode layer 25 and a stainless steel substrate 26 .

[0038] Concrete preparation steps are as follows:

[0039] (1) Clean the substrate

[0040] Using stainless steel as the substrate, first soak the stainless steel substrate in the electronic cleaner solution for 15 min, then take it out, rinse it with a large amount of deionized water, and dry it with nitrogen.

[0041] (2) Deposit Mo bottom electrode layer

[0042] Using magnetron sputtering technology to deposit Mo (molybdenum) bottom electrode layer: fix the cleaned stainless steel substrate on the support, put it into a vacuum chamber, and the vacuum degr...

Embodiment 3

[0052] Such as image 3 As shown, the structure of the p-i-n type solar cell provided in this embodiment from top to bottom is (along the light direction) Ag top electrode layer 31, p-type sulfur-doped antimony selenide semiconductor layer 32, intrinsic amorphous silicon semiconductor layer i-type layer 33 , n-type Ag-doped antimony selenide single crystal layer 34 and Ag bottom electrode layer 35 .

[0053] Concrete preparation steps are as follows:

[0054] (1) Preparation of n-type Ag-doped antimony selenide single crystal layer

[0055] The n-type Ag-doped antimony selenide single crystal layer with a thickness of 1-100 μm is prepared by Czochralski method, zone melting method or directional solidification method, and it can also be grown and prepared by epitaxial method. Wherein the molar ratio of selenium, antimony and Ag is 3:2:0.001-0.01.

[0056] (2) Deposition of intrinsic amorphous silicon semiconductor i-type layer

[0057] The intrinsic amorphous silicon semic...

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Abstract

The invention discloses a p-i-n-type antimony selenide thin-film solar cell which comprises, from top to bottom, a top electrode layer, a p-type antimony selenide semiconductor layer, an intrinsic semiconductor i-type layer, an n-type antimony selenide semiconductor layer, and a bottom electrode layer. The structure of the solar cell can reduce the lattice mismatch of a pn-junction interface and reduce the high recombination rate due to the high interfacial defect density. Further, the intrinsic semiconductor i-type layer is inserted into the homogeneous antimony selenide pn junction so that a built-in field can be expanded in the intrinsic semiconductor i-type layer, thereby being beneficial to the separation of photon-generated carrier charges, increasing the collection efficiency of the photon-generated carriers, and further improving the performance of the solar cell. The solar cell is simple in preparation process and suitable for industrial production and application.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a p-i-n type antimony selenide solar cell. Background technique [0002] Antimony Selenide (Sb 2 Se 3 ) is a binary compound with a single and stable phase, large reserves of raw materials, low toxicity, cheap price, suitable band gap (1.0eV-1.35eV), and large absorption coefficient (>10 5 cm -1 ), is an ideal photovoltaic material, and its theoretical photoelectric conversion efficiency can reach more than 30%. The research on antimony selenide thin-film solar cell devices first started in 2014. In just two years, the conversion efficiency has reached 6%. It can be seen that antimony selenide is a photovoltaic material of great research significance. [0003] Currently, the solar cell structures using antimony selenide material as the light absorbing layer reported in the literature mainly include two structures: sensitized solar cells and planar solar cells. In the planar str...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/075
CPCH01L31/0324H01L31/075Y02E10/548
Inventor 李志强郭玉婷麦耀华朱红兵陈静伟
Owner HEBEI UNIVERSITY
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