Indium tin oxide transparent electrode-based opposed-contact photoconductive switch and fabrication method thereof

Abstract

The present invention discloses an indium tin oxide transparent electrode-based opposed-contact photoconductive switch. The indium tin oxide transparent electrode-based opposed-contact photoconductive switch includes a vanadium-compensated silicon carbide semi-insulating substrate (1), an upper ohmic contact electrode (2), a lower ohmic contact electrode (3), an upper thin film electrode (4) and a lower thin film electrode (5); the upper ohmic contact electrode (2) and the lower ohmic contact electrode (3) are respectively deposited on the front surface and back surface of the vanadium-doped silicon carbide substrate (1); the upper thin film electrode (4) is deposited on the front surface of the vanadium-doped silicon carbide substrate (1) and the surface of the upper ohmic contact (2); the lower thin film electrode (5) is deposited on the back surface of the vanadium-doped silicon carbide substrate (1) and the surface of the lower ohmic contact electrode (3); the upper thin film electrode and the lower thin film electrode are both made of a transparent indium tin oxide material; and therefore, the photoconductive switch can be turned on when the surfaces of the electrodes are under illumination, and the light receiving area of the device is increased, the photon concentration and laser energy utilization rate of a conductive channel can be improved. The photoconductive switch can be used for a high-speed pulse system.

Description

technical field [0001] The invention belongs to the field of microelectronics, in particular to a transparent electrode different-surface photoconductive switch, which can be used as a switch in a high-speed and high-power pulse system. [0002] technical background [0003] In 1974, D.H.Auston of Bell Laboratories prepared the world's first silicon-based photoconductive switch, but due to the limitations of silicon materials, high-performance switches could not be obtained; in 1976, H.L.Chi of the University of Maryland prepared the first The first GaAs photoconductive switch, its performance is far superior to the silicon-based photoconductive switch, so in the following decades, the photoconductive switch of gallium arsenide has been relatively mature research. However, due to the unique Lock-on effect of the GaAs photoconductive switch, its application in a wider range is limited. With the maturity of the third-generation semiconductor silicon carbide material, it has gr...

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Problems solved by technology

[0005] On the one hand, the 532nm laser needs to be irradiated from two sides, and the laser incident area on the side of the device is extremely limited. In this case, the use of the device requires a sophisticated optical fiber system to build an optical path for the switch, which increases the difficulty of using the device.

[0006] On the other hand, when the 532nm laser is irradiated from the side and reaches the bottom of the electrode, the energy of the laser has been greatly attenuated. To reach the saturation state of the device, the energy density of the incident laser needs to be increased, that is, in principle, low energy density triggering cannot be achieved.

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