Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of organically modified CDS-doped silicon nanotube composite material and its preparation method and application

A technology of composite materials and silicon nanotubes, which is applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems that the back passivation layer material cannot be sensed, so as to improve the efficiency of light energy utilization and strong The effect of sensory ability

Active Publication Date: 2018-06-08
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Purpose of the present invention: To solve the problem that the back passivation layer material of cadmium telluride thin film solar cells cannot be induced to thermal radiation, to provide a kind of organically modified CdS doped silicon nanotube composite material and its preparation method, the composite material It is used to prepare cadmium telluride thin film solar cells, enhance the sensing ability of the cells to thermal radiation, and improve the photoelectric conversion efficiency of the cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of organically modified CDS-doped silicon nanotube composite material and its preparation method and application
  • A kind of organically modified CDS-doped silicon nanotube composite material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Preparation of organically modified CdS-doped silicon nanotube composites:

[0022] (1) Add 2.5 mol of silicon nanotubes and 7.5 mol of deionized water into a three-necked flask, ultrasonically disperse for 1 hour, add 0.5 mol of CdS to the three-necked flask, react hydrothermally at 120-125°C for 5 hours, and filter the obtained product , washed, and dried at 60°C to obtain CdS-doped silicon nanotubes;

[0023] (2) Add 1 mol of polyvinyl alcohol laurate and 0.3 mol of methacryloxysilane to 10 mol of ethanol, stir thoroughly for 0.5 hours, then add 1 mol of CdS-doped silicon nanotubes prepared in step (1), and finally add 0.05molNa 2 SO 4 , stirred and reacted for 3 hours under normal temperature and 200r / min rotating speed conditions, and the organically modified CdS-doped silicon nanotube composite material was prepared.

[0024] Preparation of organically modified CdS-doped silicon nanotube composite back passivation layer cadmium telluride thin film solar cells: ...

Embodiment 2

[0029] Preparation of organically modified CdS-doped silicon nanotube composites:

[0030] (1) Add 4.5 mol of silicon nanotubes and 12.5 mol of deionized water into a three-necked flask, ultrasonically disperse for 2 hours, add 0.5 mol of CdS to the three-necked flask, conduct a hydrothermal reaction at 120-125°C for 8 hours, and filter the resulting product , washed, and dried at 60°C to obtain CdS-doped silicon nanotubes;

[0031] (2) Add 1 mol of polyvinyl alcohol laurate and 0.6 mol of methacryloxysilane to 15 mol of ethanol, stir thoroughly for 0.5 hours, then add 3 mol of CdS-doped silicon nanotubes prepared in step (1), and finally add 0.1molNa 2 SO 4 , stirred and reacted for 5 hours under normal temperature and 200r / min rotating speed conditions, and the organically modified CdS-doped silicon nanotube composite material was prepared.

[0032] Preparation of organically modified CdS-doped silicon nanotube composite back passivation layer cadmium telluride thin film ...

Embodiment 3

[0037] Preparation of organically modified CdS-doped silicon nanotube composites:

[0038] (1) Add 3.5 mol of silicon nanotubes and 10 mol of deionized water into a three-necked flask, ultrasonically disperse for 2 hours, add 0.5 mol of CdS to the three-necked flask, conduct a hydrothermal reaction at 120-125°C for 7 hours, and filter the resulting product, washing and drying at 60°C to obtain CdS-doped silicon nanotubes;

[0039](2) Add 1 mol of polyvinyl alcohol laurate and 0.4 mol of methacryloxysilane to 12 mol of ethanol, stir thoroughly for 0.5 hours, then add 2 mol of CdS-doped silicon nanotubes prepared in step (1), and finally add 0.08molNa 2 SO 4 , stirred and reacted for 4 hours under normal temperature and 200r / min rotating speed conditions, and prepared organically modified CdS-doped silicon nanotube composite material.

[0040] Preparation of organically modified CdS-doped silicon nanotube composite back passivation layer cadmium telluride thin film solar cell...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of preparation of a solar cell, and particularly relates to an organically modified CdS-doped silicon nanotube composite material and a preparation method and application thereof. The organically modified CdS-doped silicon nanotube composite material is provided, CdS is doped into a silicon nanotube to prepare the CdS-doped silicon nanotube, and the CdS-doped silicon nanotube is organically modified by taking polyvinyl laurate as a modification material, organosilane as a coupling agent and an inorganic salt as a catalyst to prepare the organically modified CdS-doped silicon nanotube composite material. The material is used for preparing a cadmium telluride thin film solar cell, the cell can sense sunlight in a front surface, meanwhile, a back passivation layer simultaneously can sense thermal radiation generated by the sunlight, and the light energy utilization efficiency of the solar cell is greatly improved.

Description

technical field [0001] The invention belongs to the field of solar cell preparation, and in particular relates to an organically modified CdS-doped silicon nanotube composite material, a preparation method and application. Background technique [0002] Nanoscale structured materials are referred to as nanometer materials for short, which means that the size of their structural units ranges from 1 nanometer to 100 nanometers. Since its size is already close to the coherence length of electrons, the self-organization brought about by strong coherence changes its properties greatly. Moreover, the scale is close to the wavelength of light, plus the special effect of having a large surface, so the properties it exhibits, such as melting point, magnetism, optics, thermal conductivity, electrical conductivity, etc., are often different from those of the substance in its bulk state. nature. [0003] Silicon is the main semiconductor raw material in the modern electronics industry....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1828Y02E10/543Y02P70/50
Inventor 孙铁囤姚伟忠汤平
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com