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Quantum dot silk composite material and preparation method thereof

A composite material and quantum dot technology, which is applied in the field of quantum dot silk composite material and its preparation, can solve problems such as low quantum yield, damage to silk quality, and serious application limitations, and achieve simple production process, wide application prospects, and fluorescence rich color effect

Inactive Publication Date: 2017-07-18
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although there are many ways to prepare fluorescent silk, there are some problems in these technologies. For example, the conversion rate of fluorescent substances cannot be controlled by feeding modification, and the conversion rate is usually very low. At the same time, it is harmful to silkworms and will destroy the silk. quality
The virus transfer method is too complicated, high cost, and expensive, and it cannot only be used for specific purposes, and its application is severely limited
Another example is that regenerated silk is generally dissolved in water, so the added quantum dots must be water-soluble, but water-soluble quantum dots generally have poor stability and low quantum yield, and the fluorescence efficiency of the final composite material is generally lower than 5%.

Method used

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  • Quantum dot silk composite material and preparation method thereof
  • Quantum dot silk composite material and preparation method thereof
  • Quantum dot silk composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] a. Synthesis of quantum dot luminescent materials

[0024] CdS / ZnS quantum dot nanomaterials were synthesized by high temperature injection method.

[0025] Take 0.0256g of cadmium oxide, 0.502g of oleic acid, and 6g of octadecene, stir and heat to 260°C under nitrogen, add 1mL of sulfur precursor solution (dissolve 0.032g of sulfur powder in 10mL of octadecene), and reduce the reaction solution to 240 ℃, maintain 10min, inject a certain amount of zinc diethyldithiocarbamate precursor solution (dissolve 0.362g zinc diethyldithiocarbamate in 10mL oleylamine solution), raise the temperature to 180℃, maintain 20min .

[0026] b. Surface treatment of quantum dot luminescent materials

[0027] Take the reacted quantum dot stock solution, add n-hexane-methanol mixed washing solution with a volume ratio of 1:2, wash the quantum dots, repeat several times, and finally obtain a quantum dot n-hexane solution containing a small amount of ligands.

[0028] c. Treatment of silk m...

Embodiment 2

[0037] a. Synthesis of quantum dot luminescent materials

[0038] CdSe@ZnS / ZnS quantum dot nanomaterials were synthesized by high temperature implantation method. A mixed solution of 0.14 mmol of cadmium acetate, 3.41 mmol of zinc oxide and 7 mL of oleic acid was heated to 150° C. in a nitrogen atmosphere, and then 15 mL of octadecene was added, followed by heating to 310° C. Rapidly inject 2 mL of selenium-sulfur precursor solution (dissolve 5 mmol of selenium powder and 5 mmol of sulfur powder in 5 mL of tri-n-octylphosphine), and grow at 310 °C for 10 min. Then inject a mixed solution of 1.6mmol sulfur powder and 2.4mL octadecene, maintain 310°C for 12min, then inject zinc acetate precursor solution (dissolve 2.86mmol zinc acetate in 1mL oleic acid and 4mL octadecene) to reduce the temperature of the reaction solution After cooling down to 270°C, add a mixed solution of 9.65mmol sulfur powder and 5mL tri-n-octylphosphine, and grow at 270°C for 20min.

[0039] b. Surface t...

Embodiment 3

[0050] a. Synthesis of quantum dot luminescent materials

[0051] CdS / ZnS quantum dot nanomaterials were synthesized by high temperature injection method. Take 0.0256g of cadmium oxide, 0.502g of oleic acid, and 6g of octadecene, stir and heat to 260°C under nitrogen, add 1mL of sulfur precursor solution (dissolve 0.032g of sulfur powder in 10mL of octadecene), and reduce the reaction solution to 240 ℃, maintain 10min, inject a certain amount of zinc diethyldithiocarbamate precursor solution (dissolve 0.362g zinc diethyldithiocarbamate in 10mL oleylamine solution), raise the temperature to 180℃, maintain 20min .

[0052] CdSe@ZnS / ZnS quantum dot nanomaterials were synthesized by high temperature implantation method. A mixed solution of 0.14 mmol of cadmium acetate, 3.41 mmol of zinc oxide and 7 mL of oleic acid was heated to 150° C. in a nitrogen atmosphere, and then 15 mL of octadecene was added, followed by heating to 310° C. Rapidly inject 2 mL of selenium-sulfur precurs...

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Abstract

The invention discloses a quantum dot silk composite material and a preparation method thereof and relates to a quantum dot luminescence material and functional modified silk. The quantum dot silk composite material comprises the following components: a mixed oil-soluble quantum dot luminescence material of at least one of CdSe / CdS, CdS / ZnS and CdSe@ZnS / ZnS, and a silk solution dissolved by an organic solvent, wherein the mixed oil-soluble quantum dot luminescence material of at least one of the CdSe / CdS, the CdS / ZnS and the CdSe@ZnS / ZnS is doped into the silk solution dissolved by the organic solvent; carrying out degumming, dissolving, dialyzing, freeze-drying and re-dissolving processes on silkworm cocoons to regenerate a silk material, and dissolving freeze-dried powder into a hexafluoroisopropanol solution to a silk solution; re-dissolving the quantum dot luminescence material of the CdSe / CdS, the CdS / ZnS and the CdSe@ZnS / ZnS into an organic solvent to obtain quantum dots through surface treatment; and mixing the silk solution with the quantum dots and volatilizing the solvent to obtain the quantum dot silk composite material.

Description

technical field [0001] The invention relates to a quantum dot luminescent material and functionalized modified silk, in particular to a quantum dot silk composite material and a preparation method thereof. Background technique [0002] Silk is a natural protein fiber. With the in-depth study of its structure and properties, its unique mechanical properties, good biocompatibility and biodegradability have gradually revealed its advantages. However, with the continuous expansion of research and application, the function of natural silk becomes more and more monotonous. [0003] In recent years, in order to meet the application needs of optoelectronic devices and biological imaging, researchers have conducted more in-depth research on the optical functionalization of silk. For example, Chinese patent CN 105085999 A has invented a biocompatible quantum dot luminescent film and its preparation method, with water-based luminescent quantum dots (such as silicon quantum dots) and t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88C09K11/56
CPCC09K11/025C09K11/565C09K11/883
Inventor 刘向阳孔令庆林乃波
Owner XIAMEN UNIV
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