A titanium diboride/tungsten coating with nano-layered structure and its preparation method
A titanium diboride and nano-layered technology is applied in the field of titanium diboride/tungsten coating and its preparation, which can solve the problems of no research report, and achieve the effects of simple process, short preparation period and convenient operation.
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Embodiment 1
[0033] Embodiment 1 realizes the present invention according to the following steps:
[0034] (1) Cleaning the substrate: send the polished WC-Co cemented carbide substrate into an ultrasonic cleaning machine, and perform ultrasonic cleaning with acetone and absolute ethanol at 30kHz for 10min respectively, then clean it with deionized water, and then clean it with purity ≥99.5% nitrogen blow dry.
[0035] (2) Vacuumizing and ion beam etching to clean the cavity and substrate: the ion coating machine is equipped with a TiB2 planar target and a metal W columnar target, and the coating chamber is cleaned with a high-power vacuum cleaner. Place the substrate after ultrasonic cleaning on the workpiece support in the vacuum chamber, and pump it to a vacuum degree of 5.0×10- 3Below Pa, then turn on the ion source, pass 80sccm argon gas into the ion source, set the ion source power to 0.9kW, set the workpiece support bias to -300V, and the etching cleaning process lasts for 20min. ...
Embodiment 2
[0041] Embodiment 2 Realize the present invention according to the following steps:
[0042] (1) Cleaning the substrate: Send the polished (100)-oriented single crystal silicon substrate into an ultrasonic cleaning machine, perform ultrasonic cleaning with acetone and absolute ethanol at 30 kHz for 10 min, and then rinse with deionized water. Blow dry with nitrogen with purity ≥99.5%.
[0043] (2) Vacuumizing and ion beam etching to clean the cavity and substrate: the ion coating machine is equipped with a TiB2 planar target and a metal W columnar target, and the coating chamber is cleaned with a high-power vacuum cleaner. Place the substrate after ultrasonic cleaning on the workpiece support in the vacuum chamber, and evacuate the vacuum chamber to a vacuum of 5.0×10- 3 Below Pa, then turn on the ion source, feed 80sccm argon into the ion source, set the ion source power to 0.9kW, set the workpiece support bias to 300V, and the etching and cleaning process lasts for 20 minut...
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