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Method for preparing nonlinear resistor based on hydrogenated rare earth nickel-based perovskite oxide

A technology of perovskite oxide and non-linear resistance, applied in the direction of electrical components, etc., can solve the problems of non-linear change of material resistance and reduce the bonding effect of nickel-oxygen octahedron

Active Publication Date: 2017-10-10
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

We found that the protons doped in the rare earth hydride nickel-based compound migrate under a certain activation energy and reduce the bonding with the nickel-oxygen octahedron, thus causing a nonlinear change in the material resistance

Method used

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  • Method for preparing nonlinear resistor based on hydrogenated rare earth nickel-based perovskite oxide
  • Method for preparing nonlinear resistor based on hydrogenated rare earth nickel-based perovskite oxide
  • Method for preparing nonlinear resistor based on hydrogenated rare earth nickel-based perovskite oxide

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Pt / H-SmNiO 3 The preparation and application method of the / Si electrically triggered bidirectional non-linear resistance are as follows: 200 nanometers of samarium nickel oxide (SmNiO) are grown on a square silicon substrate with a side length of 10 mm. 3 ) polycrystalline film. Strip metal platinum catalytic electrodes are prepared on the surface of the film. The electrode size is: 10 mm long, 0.5 mm wide, and 100 nm thick; the platinum strips are arranged in parallel with each other in the array, with a spacing of 1 mm. The samarium-nickel-oxygen thin-film material deposited with platinum-catalyzed electrode arrays was exposed to 1% H 2 / He mixed gas at 300 degrees Celsius for 30 minutes for hydrogenation treatment. In actual use, two adjacent platinum catalytic electrodes are used as signal input and output terminals, and a voltage is applied between the two electrodes to measure the current. figure 1 The device structure is illustrated. figure 2The measured I-...

Embodiment 2

[0027] Pt / H-SmNiO 3 / SrRuO 3 / Si electric trigger unidirectional non-linear resistance preparation and use method, specifically as follows: grow 100 nanometers of strontium rubidium oxide film bottom electrode on the square silicon substrate of side length 10 millimeters, grow 200 nanometers of samarium nickel oxide (SmNiO) on the bottom electrode 3 ) polycrystalline film. A cylindrical metal platinum catalytic electrode is prepared on the surface of the film. The electrode size is 50 microns in diameter and 100 nanometers in thickness; the platinum electrodes in the whole array are arranged in a square two-position lattice, and the distance between the platinum electrodes is 150 microns. The samarium-nickel-oxygen film deposited with the platinum-catalyzed electrode array was exposed to 1% H 2 / He mixed gas at 300 degrees Celsius for 30 minutes for hydrogenation treatment. In actual use, the bottom electrode and each platinum catalytic electrode are used as signal input an...

Embodiment 3

[0029] Pt / H-SmNiO 3 / SrTiO 3 The preparation and application method of the electrically triggered bidirectional non-linear resistance are as follows: in a square strontium titanate (SrTiO 3 ) growth of 200 nm samarium nickel oxide (SmNiO 3 ) polycrystalline film, by controlling the growth conditions to make the epitaxial coherent growth of the film material, that is, the film is a quasi-single crystal material and is in a state of tensile stress. Strip metal platinum catalytic electrodes are prepared on the surface of the film. The electrode size is: 10 mm long, 0.5 mm wide, and 100 nm thick; the platinum strips are arranged in parallel with each other in the array, with a spacing of 1 mm. The samarium-nickel-oxygen thin-film material deposited with platinum-catalyzed electrode arrays was exposed to 1% H 2 / He mixed gas at 300 degrees Celsius for 30 minutes for hydrogenation treatment. In actual use, two adjacent platinum catalytic electrodes are used as signal input and o...

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Abstract

The invention relates to a method for preparing and using a nonlinear resistor based on hydrogenated rare earth nickel-based perovskite oxide, and belongs to the field of electronic strong correlation materials and electronic devices. As doped protons in a material increase with electric field intensity and gradually migrate to trigger transformation of a nickel element in the material from a strong correlation electron localized state insulator phase to a weak electron non-localized state metal or semiconductor phase, thereby realizing variation of material resistance with impressed voltage, i.e., realizing a current-voltage nonlinear variation relation. Through control of conditions of the rare earth element type, crystal structure, crystal particle crystal boundary state and stress state of the material, migration activation energy and a soft breakdown characteristic of protons in hydrogenated rare earth nickel-based perovskite oxide are controlled, thereby realizing control of a dynamic change process of material nonlinear resistance. The preparation method provide by the invention can be applied to aspects of piezoresistors, smoothing and rectification, electrical signal sensing, overvoltage protection and the like. Compared with traditional pressure-sensitive nonlinear resistance materials of zinc oxide, titanium oxide and the like, a device prepared by the method is more suitable for a reducing atmosphere.

Description

technical field [0001] The invention belongs to the field of strongly correlated electron materials and electronic devices, and relates to a preparation method of a non-linear resistance based on hydrogenated rare earth nickel-based perovskite oxide. Background technique [0002] Rare earth nickel-based perovskite oxides (ReNiO 3 : Re=Sm, Nd, Eu, etc.) is a classical metal-insulator phase transition (MIT) electron strongly associated state material [Nat.Commun., 2014, 5, 4860; 031905; Phys. Rev. Lett., 1999, 82, 3871; Phys. Rev. B, 2004, 69, 153105; Phase Transitions, 2008, 81, 729]. The key to realize the transformation from metal state (or semiconductor state) to insulator state lies in the relative adjustment of nickel element valence state and nickel-oxygen bond angle through external conditions. In addition to having the same classic vanadium dioxide (VO 2 ) In addition to the similar temperature-induced phase transition characteristics, through hydrogen to ReNiO 3 ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/8836H10N70/011
Inventor 陈吉堃姜勇徐晓光苗君吴勇孟康康
Owner UNIV OF SCI & TECH BEIJING
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