Preparation methods of optical dielectric thin film, Al2O3, silicon-containing thin film and laser cavity surface film

An optical medium and thin film technology, which is applied in the fields of silicon-containing thin film, laser cavity mask preparation, optical dielectric thin film, and Al2O3, can solve the problems of laser conversion efficiency reduction, wavelength drift, etc., and achieve better optical performance, small wavelength drift, Good firmness

Inactive Publication Date: 2017-10-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the preparation process of the laser cavity film, an annealing process is required, and the annealing process will affect the efficiency, wavelength and other properties of the laser, resulting in a decrease in the conversion efficiency of the laser and a shift in the wavelength.

Method used

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  • Preparation methods of optical dielectric thin film, Al2O3, silicon-containing thin film and laser cavity surface film
  • Preparation methods of optical dielectric thin film, Al2O3, silicon-containing thin film and laser cavity surface film
  • Preparation methods of optical dielectric thin film, Al2O3, silicon-containing thin film and laser cavity surface film

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preparation example Construction

[0047] The invention discloses a preparation method of an optical medium thin film, which comprises the following steps:

[0048] Step 1, placing the substrate in the chamber of the electron beam evaporation equipment, and evacuating;

[0049] Step 2, using ionized argon and nitrogen to bombard the surface of the substrate under a high-energy electric field;

[0050] Step 3, the high-energy electrons bombard the target material of the optical medium in batches, and pre-melt the optical medium particles step by step;

[0051] Step 4, depositing optical medium particles on the substrate to complete the preparation of the optical medium thin film.

[0052] The preparation method of the invention does not need an annealing process, and avoids the influence on the optical and mechanical properties of the optical medium film during the annealing process, thereby obtaining high-quality optical medium films and laying a foundation for the preparation of various anti-reflection films ...

Embodiment 1

[0090] This embodiment proposes a high-quality Al 2 o 3 The preparation method of thin film specifically comprises the following steps:

[0091] Step 1. Place the sapphire substrate on the sample holder of the electron beam evaporation equipment, and use the mechanical pump and the cryopump to operate in sequence to pump the chamber vacuum to 8×10 -6 Torr.

[0092] Step 2, cleaning the substrate, that is, heating the substrate to 150°C and keeping it for 1800 seconds; setting the ion source cathode filament current to 20A, the anode drive current to 1.2A, and high-purity argon (Ar) and nitrogen (N 2 ) ionization, argon (8SCCM) plasma and nitrogen (16SCCM) plasma will bombard the surface of the substrate under a high-energy electric field, and the cleaning purpose can be achieved after maintaining for 300 seconds.

[0093] Step 3, the electron gun gradually increases the power, and emits high-energy electrons to bombard Al 2 o 3 Target (i.e. 1.5mm high-purity Al 2 o 3 pa...

Embodiment 2

[0100] This embodiment proposes a high-quality SiO 2 The preparation method of thin film specifically comprises the following steps:

[0101] Step 1. Place the sapphire substrate on the sample holder of the electron beam evaporation equipment, and use the mechanical pump and the cryopump to operate in sequence to pump the chamber vacuum to 8×10 -6 Torr.

[0102] Step 2. Clean the substrate, that is, heat the substrate to 150°C and keep it for 1800 seconds; set the ion source cathode filament current to 20A, anode drive current to 1.2A, and high-purity Ar and N 2 Ionization, argon (8SCCM) plasma and nitrogen (16SCCM) plasma will bombard the surface of the substrate under a high-energy electric field, and the cleaning purpose can be achieved after maintaining for 300 seconds;

[0103] Step 3. The electron gun gradually increases the power and emits high-energy electrons to bombard SiO 2 Target (i.e. 2mm high-purity SiO 2 particles), for SiO 2 The pellets are premelted step ...

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Abstract

The invention discloses preparation methods of an optical dielectric thin film, Al2O3, a silicon-containing thin film and a laser cavity surface film. The preparation method of the optical dielectric thin film comprises the steps that a substrate is placed in a cavity of electron beam evaporation equipment and vacuumized; the surface of the substrate is bombarded under a high-energy electric field through ionized argon and ionized nitrogen; a target material with an optical dielectric is bombarded by high-energy electrons in batches, and optical dielectric particles are pre-molten step by step; and the optical dielectric particles are deposited on the substrate, and thus preparation of the optical dielectric thin film is completed. According to the preparation method of the optical dielectric thin film, the annealing process is not needed, the effects of the annealing process on the optical and mechanical properties and the like of the optical dielectric thin film are avoided, accordingly, the high-quality optical dielectric thin film is obtained, and the foundation is laid for preparation of various anti-reflection films and high reflectivity films.

Description

technical field [0001] The invention belongs to the field of optical film preparation, and more specifically relates to an optical medium film, Al 2 o 3 , a method for preparing a silicon-containing thin film and a laser cavity mask. Background technique [0002] Optical thin film technology is a highly interdisciplinary subject, which involves various fields such as vacuum technology, material science, precision machinery manufacturing, and automatic control technology. Optical film is an important class of optical components, which can split light transmission, light split reflection, light split absorption and change the polarization state or phase of light. It is used in various reflective films, anti-reflection films and interference filters, and is widely used in modern optics. , optical engineering and other related fields of science and technology. With the rapid development of optoelectronic technology in the early 21st century, the application of optical thin fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/46C23C14/08C23C14/10C23C14/06H01S3/08
CPCC23C14/30C23C14/06C23C14/081C23C14/10C23C14/46H01S3/08
Inventor 谢圣文张宇廖永平牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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