Preparation method of flexible OLED light-emitting device based on anode structure of novel laminated film

A technology of anode structure and light-emitting devices, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of fragility and lack of flexibility of the ITO layer, difficulty in preparing flexible devices from ITO, and increasing material conductivity. Achieve high transmittance, good mechanical flexibility and high conductivity

Inactive Publication Date: 2017-11-03
茆胜
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Problems solved by technology

[0004] The main property of ITO is its combination of electrical conductivity and optical transparency, however, a compromise needs to be made in thin film deposition, as a high concentration of charge carriers will increase the conductivity of the material but reduce its transparency
[0005] Tradit

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  • Preparation method of flexible OLED light-emitting device based on anode structure of novel laminated film

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Embodiment Construction

[0025] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings.

[0026] The OLED light-emitting element in a preferred embodiment of the present invention includes a light-emitting layer and a cathode on one side of the light-emitting layer, such as figure 1 As shown, the preparation method of the flexible OLED light-emitting device based on the anode structure of the novel laminated film comprises the following steps:

[0027] S1. Graphene is grown on copper foil by chemical vapor deposition;

[0028] S2, graphene is transferred to flexible PET (polyethylene terephthalate) substrate;

[0029] S3, putting the prepared graphene / PET into HNO3 (nitric acid) solution for soaking, then drying;

[0030] S4, spray PEDOT on the treated graphene: PSS (poly (3,4-ethylenedioxythiophene)-poly ...

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Abstract

The invention relates to a preparation method of a flexible OLED light-emitting device based on the anode structure of a novel laminated film. The OLED light-emitting device comprises a light-emitting layer and a cathode positioned on one side of the light-emitting layer. The method comprises the following steps: S1, growing graphene on a copper foil by adopting a chemical vapor deposition method; S2, transferring the graphene onto a flexible PET substrate; S3, putting the prepared graphene/PET into an HNO3 solution for soaking, and then drying; S4, spraying a PEDOT:PSS solution on the treated graphene, then putting on a heating plate for drying; and S5, putting a prepared graphene/PEDOT:PSS composite film into a vacuum cavity, adopting a vacuum evaporation technology to heat and plate the graphene/PEDOT:PSS composite film on the side, at the back of the cathode, of the light-emitting layer as an anode, and thus preparing the OLED light-emitting device. The graphene serves as the anode of a photoelectric device, so that the anode has the characteristics of high carrier mobility, good mechanical flexibility, high transmittance and the like; and the PEDOT:PSS enables the anode to be of the characteristics of high conductivity, high work function and high transmittance.

Description

technical field [0001] The invention relates to a flexible OLED light-emitting device, more specifically, to a method for preparing a flexible OLED light-emitting device based on a novel laminated film anode structure. Background technique [0002] Flexible organic light-emitting diodes (FOLEDs) have attracted extensive attention due to their many advantages such as low cost, high color purity, light weight, and high luminous efficiency. [0003] Indium tin oxide (ITO) is a mixture of indium (III group) oxide (In2O3) and tin (IV group) oxide (SnO2), usually with a mass ratio of 90% In2O3 and 10% SnO2. It is transparent and slightly brown in film form. In the block state, it is yellowish-gray. Indium tin oxide thin films are most commonly deposited onto surfaces by physical vapor deposition, or some sputter deposition technique. [0004] The main property of ITO is its combination of electrical conductivity and optical transparency, however, a compromise needs to be made i...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/81H10K71/00
Inventor 茆胜
Owner 茆胜
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