Method of growing Ga2O3 single crystals by way of closed tube chemical vapor transport

Abstract

The invention relates to a method of growing Ga2O3 single crystals by way of closed tube chemical vapor transport. The method comprises the following steps: putting Ga2O3 power as a source in one end of a closed quartz tube while placing seed crystals for growing Ga2O3 in the other end of the closed quartz tube; and controlling temperature distribution in a source region and a growth region to realize vapor transport from the source region to the growth region to grow the Ga2O3 single crystals, wherein in the growing process, carbon powder is put in the source region. According to the method provided by the invention, in the growing process, the growing temperature in the way of closed tube chemical vapor transport is lower than that of physical vapor transport; by adding the carbon powder, the vapor pressure of a decomposed product in the quartz tube is increased, and the growing is accelerated, so that the growing cost is relatively low.

Description

technical field [0001] The invention relates to the technical field of preparation of compound semiconductor materials, in particular to a method of growing Ga 2 o 3 single crystal method. Background technique [0002] Ga 2 o 3 As a wide band gap compound semiconductor material with direct band gap, it has certain electrical conductivity, is not easy to be chemically corroded, has high mechanical strength, stable performance at high temperature, and high transparency of visible light and ultraviolet light, especially in ultraviolet and ultraviolet light. The blue light region is transparent, so it is widely used in various fields such as gas sensors, ultraviolet detectors, solar cells, lithography, surface modification, DNA detection, liquid crystal displays, and transparent electrodes of ultraviolet light-emitting devices. Ga 2 o 3 The bandgap width of gallium oxide is 4.8-4.9ev, which is second only to diamond in semiconductor materials. Gallium oxide, as a transpare...

AI Technical Summary

Problems solved by technology

Due to the relatively high melting point of gallium oxide, the method of solution growth will have some difficulties, and the high temperature resistance requirements for equipment and reaction chambers will be relatively high, and the production cost will be increased.

Ga obtained by conventional chemical vapor transport technique 2 o 3 The single crystal size is relatively small, and it will consume a large amount of carrier gas, and there is a problem of slow growth rate

In addition, there are flame methods and flux methods, which not only introduce a large amount of impurities, but also make it difficult to obtain large-sized Ga 2 o 3 single crystal

Images