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A method for preparing high-mobility niobium-doped tin oxide single crystal thin film

A single crystal thin film and tin oxide technology, which is applied in the field of preparation of high mobility niobium doped tin oxide single crystal thin film, can solve the problems that are difficult to meet the application standards of devices, high mobility and low defect density, and affect the electrical properties of materials, etc. , to achieve the effects of easy and precise control of process conditions, excellent photoelectric performance, and easy industrial production

Inactive Publication Date: 2019-10-01
SHANDONG UNIV
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Problems solved by technology

SnO prepared under existing technical conditions 2 It is difficult for thin-film materials to meet the standards for device applications, mainly because it is difficult to obtain single-crystal SnO with high mobility and low defect density by traditional preparation techniques. 2 Doped thin film materials seriously affect the electrical properties of the material

Method used

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  • A method for preparing high-mobility niobium-doped tin oxide single crystal thin film
  • A method for preparing high-mobility niobium-doped tin oxide single crystal thin film
  • A method for preparing high-mobility niobium-doped tin oxide single crystal thin film

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Abstract

The invention relates to a preparation method of niobium-doped stannic oxide monocrystal film with a high migration rate. The method comprises the step of using an MOCVD method to grow the niobium-doped stannic oxide monocrystal film on a magnesium fluoride substrate under the condition of vacuum by using tetraethyltin and niobium ethoxide as metal organic sources, using oxygen as an oxidizing gas, and using nitrogen as a carrier gas. The stannic oxide film is an epitaxial material with a monocrystal structure, no twin crystal and domain structure exist in the film, the carrier migration rate of the niobium-doped stannic oxide film is up to 83.8cm<2>V<-1>s<-1>, and average transmittance of a visible light area reaches 83%. The method can be used for preparing transparent semiconductor devices or ultraviolet electronic devices.

Description

technical field The invention relates to a preparation method of a high-mobility niobium-doped tin oxide single crystal thin film, belonging to the technical field of semiconductor optoelectronic materials. Background technique Tin oxide (SnO 2 ) is a wide bandgap semiconductor material with a direct bandgap. Compared with gallium nitride (GaN, Eg ~ 3.4eV) and zinc oxide (ZnO, Eg ~ 3.37eV, exciton binding energy ~ 60meV), tin oxide materials not only have a wider band gap and higher excitonic Binding energy (~3.7eV and ~130meV respectively at room temperature), and has the advantages of low preparation temperature and stable physical and chemical properties. So far, the research on tin oxide has mainly focused on the aspects of transparent conductivity, gas-sensing properties and nanomaterial properties. At present, tin oxide thin-film materials are mainly used in transparent electrodes of thin-film solar cells and light-emitting devices, and gas sensors. SnO 2 The com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B25/18H01L21/365H01L31/18H01L31/0224H01L33/42
CPCC30B25/18C30B29/16H01L21/0237H01L21/02565H01L21/0257H01L21/02598H01L21/0262H01L31/022425H01L31/022466H01L31/1884H01L33/42H01L2933/0016Y02P70/50
Inventor 栾彩娜马瑾何林安
Owner SHANDONG UNIV
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