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Preparation method of high-density high-hardness high-purity boron target material

A manufacturing method and high-density technology, applied in the field of target manufacturing, can solve the problems of high cost and limited thickness of boron target, and achieve the effects of low cost, short cycle and broad application prospects.

Inactive Publication Date: 2018-01-09
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thickness of the boron target prepared by the above method is limited (usually only a few hundred microns), and the substrate needs to be supported, and the cost is expensive.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] In this embodiment, the high-density and high-hardness high-purity elemental boron target is carried out according to the following steps:

[0028] Step 1, take by weighing 3.6g elemental boron powder;

[0029] Step 2. Fill the weighed boron powder into the graphite mold. The boron powder and the inner wall of the graphite female mold and the boron powder and the upper and lower pressure heads are separated by flexible carbon paper, and then the manual hydraulic press is used for assembly. The graphite mold of good boron powder is pre-pressed, and the pressure is ~10MPa;

[0030] Step 3. Wrap ~5mm thick carbon felt on the periphery of the pre-pressed graphite mold, then place it in the furnace of the spark plasma sintering system, evacuate it to below 5Pa, and pass in a DC pulse current to solidify the boron powder. Knot forming, the process conditions are:

[0031] The axial pressure is 20~50MPa (room temperature to 1000°C: 20MPa; higher than 1000°C: 50MPa);

[0032...

Embodiment 2

[0037] In this embodiment, the high-density and high-hardness high-purity elemental boron target is carried out according to the following steps:

[0038] Step 1, take by weighing 46.8g elemental boron powder;

[0039] Step 2. Fill the weighed boron powder into the graphite mold. The boron powder and the inner wall of the graphite female mold and the boron powder and the upper and lower pressure heads are separated by flexible carbon paper, and then the manual hydraulic press is used to install them. The graphite mold of boron powder is pre-pressed, and the pressure is ~10MPa;

[0040] Step 3. Wrap ~5mm thick carbon felt on the periphery of the pre-pressed graphite mold, then place it in the furnace of the spark plasma sintering system, evacuate it to below 5Pa, and pass in a DC pulse current to solidify the boron powder. Knot forming, the process conditions are:

[0041] The axial pressure is 20~50MPa (room temperature to 1000°C: 20MPa; higher than 1000°C: 50MPa);

[0042]...

Embodiment 3

[0047] In this embodiment, the high-density and high-hardness high-purity elemental boron target is carried out according to the following steps:

[0048] Step 1, take by weighing 275.0g elemental boron powder;

[0049] Step 2. Fill the weighed boron powder into the graphite mold. The boron powder and the inner wall of the graphite female mold and the boron powder and the upper and lower pressure heads are separated by flexible carbon paper, and then the manual hydraulic press is used to install them. The graphite mold of boron powder is pre-pressed, and the pressure is ~10MPa;

[0050] Step 3. Wrap ~5mm thick carbon felt on the periphery of the pre-pressed graphite mold, then place it in the furnace of the spark plasma sintering system, evacuate it to below 5Pa, and pass in a DC pulse current to solidify the boron powder. Knot forming, the process conditions are:

[0051] The axial pressure is 20~50MPa (room temperature to 1000°C: 20MPa; higher than 1000°C: 50MPa);

[0052...

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Abstract

The invention discloses a preparation method of high-density high-hardness high-purity boron target material. The preparation method comprises the following steps that 1, consolidation is carried outon elemental boron powder of which the purity is not lower than 99.9% and the particle size is not greater than 10 [mu]m by adopting a spark plasma sintering technology; and 2, axial pressure of 20-50MPa is exerted on the elemental boron powder in a gradient manner and then the elemental boron powder is heated to 1480-1630 DEG C at the heating rate of 50-150 DEG C per minute and heat preservationis carried out for 3-10 minutes simultaneously, so that the high-hardness high-purity boron target material with the fine and uniform structure is obtained, wherein the size of the boron target material is not less than 20mm, the thickness of the boron target material is not less than 5mm, and the density of the boron target material is not less than 20mm. According to the preparation method, theprocess is simple, the period is short, and the cost is low; the obtained boron target material can become finished product after undergoing subsequent small-scale grinding, and the finished productcan be applied to sputtering deposition in the field of nuclear physics, laser physics and functional glasses; and the application prospect is wide.

Description

technical field [0001] The invention belongs to the field of target material manufacture, and in particular relates to a method for manufacturing a high-melting-point non-metal simple substance target material. Background technique [0002] Boron target is one of the commonly used film targets in the fields of nuclear physics, laser physics and functional glass. The traditional target manufacturing method is to use powder metallurgy technology to press and shape raw material powder with a certain purity, and then sinter it at high temperature. However, conventional sintering methods, such as vacuum sintering, hot pressing, etc., take a long time, consume a lot of energy, and have low efficiency, and the prepared boron target has low density (density less than 80%), poor mechanical strength, and is fragile, so it is not suitable for Used during sputter coating. In recent years, according to different application requirements, boron target preparation technologies such as el...

Claims

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Application Information

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IPC IPC(8): C23C14/34C04B35/515C04B35/645
Inventor 张久兴胡可杨新宇李志
Owner HEFEI UNIV OF TECH