A kind of method for preparing antimony tetrasulfide three copper nanocrystalline material

An antimony tetrasulfide and copper nanotechnology, applied in chemical instruments and methods, inorganic chemistry, antimony compounds, etc., can solve problems such as high cost and complex process, and achieve the effects of easy separation, simple preparation process, and reduced reaction temperature

Active Publication Date: 2019-11-29
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the above-mentioned technical problems in the prior art, the invention provides a kind of method for preparing antimony tetrasulfide three copper nanocrystalline material, described this method for preparing antimony tetrasulfide three copper nanocrystalline material should solve the preparation in the prior art The process of antimony tetrasulfide three copper nanocrystalline materials is complicated and the technical problem is high cost

Method used

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  • A kind of method for preparing antimony tetrasulfide three copper nanocrystalline material
  • A kind of method for preparing antimony tetrasulfide three copper nanocrystalline material

Examples

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Embodiment 1

[0020] First, add the reactant precursor 6mmol antimony sulfide, 2mmol copper chloride, 10mmol sulfur powder, 10g potassium hydroxide, and 20mL deionized water into the reaction kettle in turn, stir at room temperature for 15min until the reactants are dissolved, and then seal the reaction kettle Put it in a vacuum oven at 230°C for 2 days, centrifuge and dry to obtain Cu 3 Sb 4 Semiconductor nanocrystalline materials. figure 1 Prepare sulfide Cu for a kind of concentrated alkali hydrothermal method of the present invention 3 Sb 4 Diagram of the crystal structure of the nanocrystal approach.

Embodiment 2

[0022] First, add the reactant precursor 4mmol antimony-sulfur compound, 4mmol copper acetate, 15mmol thiourea, 15g sodium hydroxide, and 25mL deionized water into the reaction kettle in turn, stir at room temperature for 20min until the reactant is dissolved, and then seal the reaction kettle Put it in a vacuum oven at 200°C for 3 days, centrifuge and dry to obtain Cu 3 Sb 4 Semiconductor nanocrystalline materials.

Embodiment 3

[0024] First, add the reactant precursor 12mmol antimony-sulfur compound, 8mmol copper oxide, 20mmol sulfur powder, 20g sodium hydroxide, and 30mL deionized water into the reactor, stir at room temperature for 30min until the reactant is dissolved, and then seal the reactor Put it in a vacuum oven at 240°C for 4 days, centrifuge and dry to obtain Cu 3 Sb 4 Semiconductor nanocrystalline materials.

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Abstract

The invention provides a method for preparing a tricopper antimony tetrasulfide nanocrystal material. The method comprises the following steps: adding reactant precursors comprising an antimony-sulfurcompound, a sulfur source, copper oxide or a soluble copper salt, a strong alkali and deionized water into a reactor, wherein the strong alkali is one of sodium hydroxide and potassium hydroxide; andstirring the reactants at room temperature until the reactants are dissolved, sealing the reactor, placing the reactor in a 180-240 DEG C vacuum oven, performing heating for a reaction for 1-5 d, andperforming centrifuging and drying to obtain the Cu3SbS4 semiconductor nanocrystal material. The method has the advantages of wide sources and no environment pollution during use of the adopted raw materials, simple preparation process, good repeatability, and stable chemical properties of the prepared product.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and relates to a Cu 3 Sb 4 , specifically a method for preparing antimony tetrasulfide tricopper nanocrystalline material. Background technique [0002] Thermoelectric conversion technology can use the Seebeck effect and Peltier effect of semiconductor materials to realize direct conversion between thermal energy and electrical energy. Its applications mainly include thermoelectric power generation and thermoelectric refrigeration. The thermoelectric performance of the material is expressed by the quality factor ZT, usually ZT=(S 2 σT) / κ, where S represents Seebeck coefficient, σ represents electrical conductivity, κ represents thermal conductivity, T represents absolute temperature, and S 2 σ is called the power factor. It can be seen that the thermoelectric figure of merit of a thermoelectric material with a large power factor and a low thermal conductivity is relatively large. The la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G30/00
CPCC01G30/002C01P2002/72
Inventor 房永征郑新峰刘玉峰侯京山张娜赵国营张若愚李倩倩
Owner SHANGHAI INST OF TECH
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