A kind of method for preparing antimony tetrasulfide three copper nanocrystalline material

An antimony tetrasulfide and copper nanotechnology, applied in chemical instruments and methods, inorganic chemistry, antimony compounds, etc., can solve problems such as high cost and complex process, and achieve the effects of easy separation, simple preparation process, and reduced reaction temperature
CN107746076BActive Publication Date: 2019-11-29SHANGHAI INST OF TECH

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI INST OF TECH
Publication Date
2019-11-29

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Abstract

The invention provides a method for preparing a tricopper antimony tetrasulfide nanocrystal material. The method comprises the following steps: adding reactant precursors comprising an antimony-sulfurcompound, a sulfur source, copper oxide or a soluble copper salt, a strong alkali and deionized water into a reactor, wherein the strong alkali is one of sodium hydroxide and potassium hydroxide; andstirring the reactants at room temperature until the reactants are dissolved, sealing the reactor, placing the reactor in a 180-240 DEG C vacuum oven, performing heating for a reaction for 1-5 d, andperforming centrifuging and drying to obtain the Cu3SbS4 semiconductor nanocrystal material. The method has the advantages of wide sources and no environment pollution during use of the adopted raw materials, simple preparation process, good repeatability, and stable chemical properties of the prepared product.
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Description

technical field

[0001] The invention belongs to the field of semiconductor materials and relates to a Cu 3 Sb 4 , specifically a method for preparing antimony tetrasulfide tricopper nanocrystalline material. Background technique

[0002] Thermoelectric conversion technology can use the Seebeck effect and Peltier effect of semiconductor materials to realize direct conversion between thermal energy and electrical energy. Its applications mainly include thermoelectric power generation and thermoelectric refrigeration. The thermoelectric performance of the material is expressed by the quality factor ZT, usually ZT=(S 2 σT) / κ, where S represents Seebeck coefficient, σ represents electrical conductivity, κ represents thermal conductivity, T represents absolute temperature, and S 2 σ is called the power factor. It can be seen that the thermoelectric figure of merit of a thermoelectric material with a large power factor and a low thermal conductivity is relatively large. The la...

Claims

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