Aluminum-doped zinc oxide transparent conductive thin film and preparation method, and thin film solar battery

Abstract

The invention provides a preparation method of an aluminum-doped zinc oxide transparent conductive thin film. The preparation method comprises the steps of taking zinc acetate dihydrate as a solute, taking aluminum trichloride hexahydrate as a doping agent, and taking absolute ethyl alcohol as a solvent to prepare a precursor liquid; forming a thin film on a substrate by the precursor liquid; performing heat treatment on the thin film in a nitrogen atmosphere; and performing heat treatment on the thin film in a synthesized atmosphere of nitrogen and hydrogen. The invention also provides the aluminum-doped zinc oxide transparent conductive thin film prepared by the preparation method, and a thin film solar battery which is prepared by taking the zinc oxide thin film as a positive electrode.The preparation method of the aluminum-doped zinc oxide transparent conductive thin film disclosed in the invention has the advantages of low public hazard, simple and convenient manufacturing process, low cost and the like; the aluminum-doped zinc oxide thin film has excellent conductivity, high visible light transmittance and flat surface; and the amorphous silicon single-junction thin film solar battery which takes the aluminum-doped zinc oxide thin film as the positive electrode has the conversion efficiency of about 7%.

Description

technical field [0001] The disclosure belongs to the field of optoelectronic technology, and in particular relates to an aluminum-doped zinc oxide (ZnO:Al) transparent conductive film, a preparation method and a thin-film solar cell. Background technique [0002] Transparent conductive films are a critical material for thin film electronics. It is a semiconductor material with good electrical conductivity and high transmittance in the visible light range. These properties make it widely used in optoelectronic devices such as liquid crystal displays, electroluminescent devices, and thin-film solar cells. [0003] In the 1950s, fluorine-doped tin oxide (SnO 2 : F) and tin-doped indium oxide (In 2 o 3 : Sn) has been developed and realized industrial application successively, both of them have very high doping efficiency, that is, very high carrier concentration, and thus have superior electrical properties. But it is precisely because of the strong carrier absorption that ...

AI Technical Summary

Problems solved by technology

Although the sol-gel method has been used to obtain ZnO-based transparent conductive films with low resistivity, toxic organic solvents such as ethylene glycol methyl ether (2-methoxyethane) and methanol (methanol) are commonly used at present.

In addition, there are few ZnO-based transparent conductive films prepared by the sol-gel method used as transparent electrodes in thin-film solar cells and have achieved good performance.

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