Preparation method for metal folding point nanowire array and metal folding point nanowire array
A nanowire array and nanowire technology are applied in the field of metal inflection point nanowire arrays and the field of preparation of metal inflection point nanowire arrays, which can solve the problem of difficulty in preparing metal inflection point nanowire arrays in orderly arrangement, and easily damaged metal nanowires. , can not be bent, etc.
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Embodiment 1
[0056] The preparation method of the metal breakpoint nanowire array of this embodiment comprises the following steps:
[0057] Step 1: spin-coat a layer of photoresist 2 on the upper surface of the substrate 1 made of semiconductor material, dry it, cover it with a mask plate with the same size and distribution density as the required nanowires, and place it on the photolithography Exposure is carried out in the machine, and the exposed photoresist 2 is developed and removed; then, the remaining exposed photoresist 2 is removed by plasma etching, and the unexposed photoresist 2 has an array nanopore structure, such as figure 1 shown;
[0058] In step 2, a layer of titanium film and a layer of gold film are sequentially vapor-deposited on the upper surface of the substrate 1 treated in step 1, such as figure 2 As shown, since the unexposed photoresist 2 acts as a mask, the upper surface of the substrate 1 forms an orderly array of precious metal lattices 3;
[0059] Step 3,...
Embodiment 2
[0082] The preparation method of the metal breakpoint nanowire array of this embodiment is as follows:
[0083]Step 1: First, place a monocrystalline silicon block with a size of 1cm*1cm*0.035cm (length*width*thickness), p-type doping type, resistivity 1-10Ω / cm, and crystal orientation In the mixed hot solution of concentrated sulfuric acid (mass concentration: 96%) and hydrogen peroxide (mass concentration: 30%) with a volume ratio of 1:1, the mixed hot solution is controlled at 60°C and monocrystalline silicon blocks are soaked in it for 10 Minutes to fully remove the oxide on the surface of the monocrystalline silicon block; then take the monocrystalline silicon block out of the mixed hot solution, rinse it with a large amount of deionized water; dry it in a nitrogen stream to obtain a substrate 1. Next, spin-coat a layer of photoresist 2 with a thickness of about 400 nm on the substrate of the base 1, dry it and place it in a photolithography machine for exposure, and th...
Embodiment 3
[0104] According to the method described in Example 2, by changing the etching properties of etching solutions with different components and proportions, nanohole arrays 11 with different numbers of bending points and bending angles are produced on the substrate 1, and then different types of targets are used. The metal 7 is centrifugally plated with the nanohole array 11 to obtain the target metal column array 4, and then the substrate 1 is separated from the target metal column array 4 by wet etching, thereby preparing orderly arranged and bent metal breakpoint nanowires Array 5, such as Figure 13 with Figure 14 shown.
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