An optoelectronic device, preparation method and application based on a two-dimensional molybdenum disulfide-rhenium disulfide heterojunction
A technology for optoelectronic devices and heterojunctions, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of insufficient carrier mobility and insufficient response time of photodetectors, and achieve high repeatability and equipment requirements. The effect of low and high switching ratios
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Embodiment 1
[0053] In the optoelectronic device prepared in this embodiment, the substrate is a Si substrate, and the insulating layer is SiO 2 The insulating layer, the first metal transition layer is a Cr metal transition layer, the second metal transition layer is a Ti metal transition layer, and the electrode layer is an Au electrode. N-type Si substrate resistivity 2 The thickness of the insulating layer is 300nm.
[0054] The specific preparation process is:
[0055] (1) Select a thermally oxidized silicon wafer as the substrate, and wash the silicon wafer in acetone (heated at 80°C), isopropanol (heated at 80°C), and deionized water (heated at 100°C) for 5 minutes, respectively. reuseO 2 Plasma cleaned it for 3 minutes, and kept it in a dry environment;
[0056] (2) Prepare scotch tape, and use a method similar to mechanical exfoliation of graphene to exfoliate monolayer MoS on silicon wafers 2 Single crystal, the average diameter of the single-layer film is about 5μm-30μm;
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Embodiment 2
[0068] The optoelectronic device provided in this example is basically the same as the optoelectronic device prepared in Example 2, except that the ReS 2 The layer is 10 layers of ReS 2 Single crystal thin film, the control parameters in the preparation process are the same as those in Implementation 1, and the prepared MoS 2 -ReS 2 heterojunction such as Figure 5 shown.
[0069] The optoelectronic device prepared in this embodiment is also used as a back-gate structure photodetector of the channel layer, and the output characteristics and transfer characteristics of the photodetection of the optoelectronic device are tested. The test results are as follows Image 6 with Figure 7 shown. according to Image 6 with Figure 7 , the field-effect mobility μ of the optoelectronic device prepared in this example FE =0.15cm 2 ·V -1 ·s -1 , the dark field leakage current is 10 -13 A, the on-current is 5×10 under the irradiation of 405nm purple light -6 A, the device swit...
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