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Preparation method of nanometer rodlike structure light positive electrode used for quantum dot sensitization solar battery

A technology of quantum dot sensitization and solar cell, which is applied in the field of preparation of quantum dot sensitized solar cell nanorod structure photoanode, and achieves the effects of good firmness, good contact, and improved photoelectric conversion efficiency.

Inactive Publication Date: 2018-04-20
QINGDAO UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report on the in-situ continuous growth of multi-level ZnO / ZnSe / CdSe heterojunction structures on the surface of ZnO nanorods, which can be directly used as photoanodes in quantum dot-sensitized solar cells.

Method used

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  • Preparation method of nanometer rodlike structure light positive electrode used for quantum dot sensitization solar battery
  • Preparation method of nanometer rodlike structure light positive electrode used for quantum dot sensitization solar battery
  • Preparation method of nanometer rodlike structure light positive electrode used for quantum dot sensitization solar battery

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Experimental program
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Effect test

Embodiment 1

[0029] (1) Fluorine-doped tin dioxide (FTO) transparent conductive glass (1.5cm×1.5cm) was cleaned with detergent, deionized water and ethanol by continuous ultrasonic cleaning;

[0030] (2) The surface of the cleaned FTO glass was spin-coated with a ZnO seed layer solution, and after the spin coating was completed, the glass was put into a muffle furnace and fired at a high temperature of 350° C. for 15 minutes. The seed layer solution consists of 0.1M zinc nitrate and 0.1M 2-methoxyethanol;

[0031] (3) Dip the treated conductive glass into a mixed solution containing 0.02M zinc nitrate hexahydrate and 0.02M hexamethylenetetramine, and keep it warm for 12 hours in a water bath environment;

[0032] (4) Rinse the grown ZnO nanorod arrays with deionized water, and then bake them in a muffle furnace at 450°C for 1 h to remove excess organic matter and improve the ZnO crystal form to obtain ZnO nanorods grown in situ on FTO glass, as figure 2 with image 3 shown.

Embodiment 2

[0034] (1) Fluorine-doped tin dioxide (FTO) transparent conductive glass (1.5cm×1.5cm) was cleaned with detergent, deionized water and ethanol by continuous ultrasonic cleaning;

[0035] (2) The surface of the cleaned FTO glass was spin-coated with a ZnO seed layer solution, and after the spin coating was completed, the glass was put into a muffle furnace and fired at a high temperature of 350° C. for 15 minutes. The seed layer solution consists of 0.1M zinc nitrate and 0.1M 2-methoxyethanol;

[0036] (3) Dip the treated conductive glass into a mixed solution containing 0.02M zinc nitrate hexahydrate and 0.02M hexamethylenetetramine, and keep it warm for 12 hours in a water bath environment;

[0037] (4) Rinse the grown ZnO nanorod array with deionized water, and then bake it in a muffle furnace at 450°C for 1 hour to remove excess organic matter and improve the ZnO crystal form;

[0038] (5) Immerse the obtained ZnO nanorods in the selenium ion solution, and react at 50° C. ...

Embodiment 3

[0040] (1) Fluorine-doped tin dioxide (FTO) transparent conductive glass (1.5cm×1.5cm) was cleaned with detergent, deionized water and ethanol by continuous ultrasonic cleaning;

[0041] (2) The surface of the cleaned FTO glass was spin-coated with a ZnO seed layer solution, and after the spin coating was completed, the glass was put into a muffle furnace and fired at a high temperature of 350° C. for 15 minutes. The seed layer solution consists of 0.1M zinc nitrate and 0.1M 2-methoxyethanol;

[0042](3) Dip the treated conductive glass into a mixed solution containing 0.02M zinc nitrate hexahydrate and 0.02M hexamethylenetetramine, and keep it warm for 12 hours in a water bath environment;

[0043] (4) Rinse the grown ZnO nanorod array with deionized water, and then bake it in a muffle furnace at 450°C for 1 hour to remove excess organic matter and improve the ZnO crystal form;

[0044] (5) The obtained ZnO nanorods were immersed in the selenium ion solution, and reacted at ...

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Abstract

The invention discloses a preparation method of a nanometer rodlike structure light positive electrode used for a quantum dot sensitization solar battery. The preparation method comprises the following steps: hydrothermally growing ZnO nanometer rods on the surface of a conducting substrate; selenizing and growing ZnSe on the surfaces of the ZnO nanometer rods; growing CdSe in a cation exchange form; assembling an obtained ZnO / ZnSe / CdSe heterojunction nanometer rod light positive electrode, a copper sheet and an electrolyte into the quantum dot sensitization solar battery; and carrying out battery photoelectric property characterization. According to the preparation method, ZnO / ZnSe / CdSe heterojunction nanometer rods are grown in situ on a conducting transparent glass substrate with a hydro-thermal synthesis and continuous ion adsorption combination method firstly, and the prepared heterojunction nanometer rods are preferable in size and morphology uniformity. Moreover, through in-situgrowth, the contact property of each interface is good, the firmness of the nanometer rods is good, the electronic transmission rate is high, and the photoelectric conversion efficiency of the quantum dot sensitization solar battery can be obviously improved.

Description

technical field [0001] The invention belongs to the preparation of semiconductor heterostructure functional materials and the cross-application of solar cells, and relates to a preparation method for quantum dot-sensitized solar cell nano-rod structure photoanodes. Background technique [0002] With the rapid development of economy and society and the rapid increase of population, people's dependence on fossil energy is increasing day by day, resulting in serious environmental pollution and energy exhaustion. As a clean and renewable alternative energy source, solar energy is a research hotspot. Solar cells are considered to be the most efficient form of solar energy utilization because they can directly convert solar energy into electrical energy. As a new type of solar cell, quantum dot-sensitized solar cells have the potential for low-cost and high-efficiency development. At the same time, it has a higher absorption coefficient and good stability compared to organic mol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/20B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01G9/204Y02E10/542
Inventor 杜中林唐建国王瑶李海东沈文飞杨兰兰
Owner QINGDAO UNIV
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