Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An infrared luminescent material and a luminescent device comprising it

A technology of infrared light-emitting and light-emitting devices, which is applied in the directions of light-emitting materials, active medium materials, semiconductor devices, etc., can solve the problems of limited emission wavelength and no clear description of infrared light-emitting materials, etc., and achieves strong luminous stability and improved emission intensity. , the effect of excellent luminous efficiency

Active Publication Date: 2021-03-19
GRIREM ADVANCED MATERIALS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, currently known La-based 3 Si 6 N 11 The emission wavelength of luminescent materials with crystal structure is limited to the visible light range
Moreover, there is currently no clear record of La 3 Si 6 N 11 infrared luminescent material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An infrared luminescent material and a luminescent device comprising it
  • An infrared luminescent material and a luminescent device comprising it
  • An infrared luminescent material and a luminescent device comprising it

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0052] The preparation method of the luminescent material of the present invention can be prepared by a method known in the art, such as a high-temperature solid-phase method.

[0053] In a preferred embodiment of the present invention, the raw materials and ratios of the elements required in the general formula for synthesizing the luminescent material are uniformly mixed, and the raw materials of each element are preferably simple substances or compounds of various metal and non-metal elements, Among them, the compound is preferably a nitride; then calcined, the calcined temperature is 1400-2000 ° C, the calcined environment is preferably carried out in a high-pressure or atmospheric furnace with nitrogen, hydrogen or CO gas protection, to ensure the low oxygen content of the environment; after calcined, Keep warm at the highest temperature for 20min-24h. If the holding time is too short, the reaction will not be sufficient, and if the time is too long, the crystal grains wi...

Embodiment 1

[0063] A luminescent material whose chemical formula is La 2.93 Nd 0.07 Si 6 N 11 . The manufacturing method is to weigh LaN, CeN, Si according to the stoichiometric ratio 3 N 4 , NdN, after mixing the above raw materials uniformly in a mortar, heat preservation in a reducing atmosphere at 1600°C for 3 hours, the resulting product is crushed, washed to remove impurities, sieved, and dried to obtain the luminescent material of the present invention.

[0064] figure 1 The powder X-ray diffraction pattern of the luminescent material was obtained for this example.

[0065] Depend on figure 1 It can be seen that the luminescent material and La 3 Si 6 N 11 The powder X-ray diffraction pattern is consistent, so the luminescent material is compatible with La 3 Si 6 N 11 have the same crystal structure.

[0066] Figure 5 It is the infrared emission spectrum diagram of the luminescent materials of Example 1 and Comparative Example 1 under 460nm light excitation. Depend ...

Embodiment 2~20

[0069] The material compositions and main peak wavelengths of the materials in Examples 2-20 are shown in Table 1 below. Examples 2-20 use a similar synthesis method to Example 1.

[0070] The materials obtained in Examples 2-20 all have the following properties: figure 1 The powder X-ray spectrum shown; all Nd-containing luminescent materials infrared luminescence spectrum figure as figure 2 Shown; All Yb-containing luminescent materials infrared luminescence spectrum figure as image 3 Shown; All the luminescent materials containing Er's infrared luminescent spectra are shown in Figure 4 shown.

[0071] Table 1

[0072] chemical components Main peak wavelength / nm Example 2 Nd 0.001 La 2.999 Si 6 N 11

1090 Example 3 Nd 1 Gd 2 Si 5.5 N 10.33

1091 Example 4 Nd 0.067 Lu 2.6 Si 5.5 N 10

1092 Example 5 Nd 0.1 Y 2.4 Si 6 N 10.5

1090 Example 6 Nd 0.1 sc 3.4 Si 6.375 N 12

109...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

An infrared light-emitting material and a light-emitting device comprising it, the light-emitting material comprising an inorganic compound, wherein the chemical formula of the inorganic compound is R w m x J y L z , wherein the R element is one or two of Nd, Er, Ho, Yb and Tm, the M element is one or more of La, Gd, Lu, Y and Sc, and the J element is Si and Ge One or two, the L element is N, or N and O, and 0<w≤1, 2.5≤x+w≤3.5, 5.5≤y≤6.5, 10≤z≤12. The infrared luminescent material of the present invention has high luminous efficiency and strong luminous stability, and the luminescent device containing the luminescent material can be widely used in the fields of lighting and display systems, optical fiber communication, solid-state laser systems, biological analysis sensing systems, biological imaging systems and the like.

Description

technical field [0001] The invention belongs to the field of luminescent materials, and in particular relates to an infrared luminescent material and a luminescent device comprising the same. Background technique [0002] In recent years, infrared luminescent materials have been widely used in military reconnaissance, infrared camouflage, material analysis, medical detection, photosensitivity, photopolymerization, nonlinear optical materials and other fields. Rare earth infrared luminescent materials are an important part of infrared luminescent materials research, which mainly focus on rare earth oxides, fluorides, aluminates, tungstates, phosphates and vanadates and other systems. doped Er 3+ 、Nd 3+ 、Tm 3+ 、Ho 3+ , Yb 3+ Inorganic infrared luminescent crystal materials such as rare earth ions have been widely used in lighting and display systems, optical fiber communications, solid-state laser systems, biological analysis sensing systems, and biological imaging system...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/79
CPCC09K11/7766C09K11/7774H01S3/14H01L33/26
Inventor 刘荣辉方亮薛原刘元红马小乐张霞邵冷冷
Owner GRIREM ADVANCED MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products