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High-efficiency organic fluorescent light emitting diode (LED) and preparation method thereof

A light-emitting diode and organic technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of complex device structure, difficulty in controlling doping concentration, etc., and achieve simple device structure, less preparation process, Effect of reducing material cost

Active Publication Date: 2018-06-12
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Using materials with thermally activated delayed fluorescence properties as auxiliary hosts, or physical blending of electron transport materials and hole transport materials as hosts, the device structure for sensitizing traditional fluorescent doped guests is relatively complicated, and generally requires three materials to be co-evaporated method, it is difficult to control the doping concentration

Method used

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  • High-efficiency organic fluorescent light emitting diode (LED) and preparation method thereof
  • High-efficiency organic fluorescent light emitting diode (LED) and preparation method thereof
  • High-efficiency organic fluorescent light emitting diode (LED) and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Take a number of ITO conductive glass substrates with the same batch number, the size is 30 mm × 30 mm, the thickness of ITO is about 90 nanometers, and the square resistance is about 20 ohms / square. Sequentially use acetone, special detergent for micron semiconductors, deionized water, and isopropanol to ultrasonically clean for 15 minutes to remove dirt on the surface of the substrate, and then put it in a constant temperature box for drying at 75 degrees Celsius for use. The dried ITO substrate was treated with plasma ignition equipment for 4 minutes to further remove the organic pollutants attached to the surface. Then the ITO substrate was transferred to an anhydrous and oxygen-free glove box filled with high-purity nitrogen. In this glove box, load the device into a vacuum evaporation chamber. Turn on the mechanical pump and molecular pump, when the evaporation chamber reaches 4×10 -4After a high vacuum of Pascal begins the thermal evaporation of the thin film. ...

Embodiment 2

[0053] The preparation process is the same as that in Example 1, but the doped fluorescein is replaced by DCJTB, the doping concentration is still 1%, and the thickness of the space isolation layer mCP is respectively 0, 1, 2, and 3 nanometers. The obtained device structure is: ITO glass substrate / TAPC (70 nm) / DCJTB doped TAPC (15 nm) / space isolation layer mCP (0, 1, 2, 3 nm) / TmPyTZ (85 nm) / lithium fluoride (1 nm) / Al.

[0054] The organic fluorescent light-emitting diode obtained in this embodiment: ITO glass substrate / TAPC (70 nanometers) / DCJTB doped TAPC (15 nanometers) / space isolation layer mCP (0, 1, 2, 3 nanometers) / TmPyTZ (85 nanometers) The current density-brightness-voltage characteristic curve, the external quantum efficiency-current density characteristic curve and the electroluminescence spectrum at different current densities of / lithium fluoride (1 nanometer) / aluminum are respectively Figure 6 , Figure 7 and Figure 8 shown. in Figure 8 In (a), (b), (c), a...

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Abstract

The invention discloses a high-efficiency organic fluorescent LED and a preparation method thereof, and belongs to the field of organic light emitting devices. The organic fluorescent LED is composedof a substrate, an anode, a cavity transmission layer, a spatial isolation layer of a broad band gap material, an electron transmission layer and a cathode laminated successively, and at least one ofthe cavity transmission layer and the electron transmission layer is doped with a fluorescent material. The spatial isolation layer is arranged between the cavity transmission layer and the electron transmission layer, an obtained exciplex within the long range under a non-contact condition serves as an excitation-stage energy donor, the efficiency roll-off under the external quantum efficiency, brightness and high current density of a device is higher than those of the device under the condition that the cavity transmission layer makes contact with the electron transmission layer, the high external quantum efficiency is not relied on utilization of a triplet state exciton of a fluorescence molecule, the structure of the fluorescence molecule is not designed specifically, and the application prospect is good.

Description

technical field [0001] The invention belongs to the field of organic photoelectric devices, and in particular relates to a high-efficiency organic fluorescent light-emitting diode and a preparation method thereof. Background technique [0002] At present, the device structure widely used in organic light-emitting diodes (OLEDs) is anode-hole transport layer-host layer-electron transport layer-cathode, in which the host layer is doped with guest light-emitting materials, and the light-emitting mechanism is generally captured by the traps of doped guests. effect, or the generation of excited states on the host, and the energy transfer effect from the host to the guest is realized. [0003] As organic light-emitting materials as guests, traditional fluorescent materials cannot utilize triplet excitons, and the internal quantum efficiency is only 25%. Phosphorescent materials containing rare metals can use spin coupling to realize the utilization of triplet excitons, but rare m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/155H10K50/165H10K71/00
Inventor 苏仕健李彬彬陈东成彭俊彪曹镛
Owner SOUTH CHINA UNIV OF TECH
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