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Monocrystalline gas-phase growth method for cadmium selenide with seed crystal heat conduction at top

A technology of vapor phase growth and cadmium selenide, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of uncontrollable crystal orientation, prone to explosion, poor optical quality, etc., to improve crystal quality and avoid cracking , The effect of reducing thermal stress

Active Publication Date: 2018-06-15
黑龙江省工研院资产经营管理有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the existing high-pressure Bridgman method for growing CdSe crystals is complex and prone to explosion, and the crystal orientation of the temperature gradient melt zone melting method and the gas phase pulling method is uncontrollable and the optical quality is poor. problem, and provide a top seed crystal thermal conduction cadmium selenide single crystal vapor phase growth method

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  • Monocrystalline gas-phase growth method for cadmium selenide with seed crystal heat conduction at top
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  • Monocrystalline gas-phase growth method for cadmium selenide with seed crystal heat conduction at top

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specific Embodiment approach 1

[0019] Specific implementation mode 1: This implementation mode is a cadmium selenide single crystal vapor phase growth method with top seed crystal heat conduction, which is specifically completed according to the following steps:

[0020] 1. Preparation of seed wafer: Orientation selection is carried out on the cadmium selenide single crystal, and the cadmium selenide single crystal with the crystal orientation, the cadmium selenide single crystal with the crystal orientation or the cadmium selenide with the crystal orientation is selected. The single crystal is used as the raw material of the seed wafer, and the raw material of the seed wafer is made into a single wafer with a diameter of 10 mm to 20 mm and a thickness of 3 mm to 5 mm, and then the surface is optically polished to a surface roughness of ≤ 10 nm to obtain a seed wafer;

[0021] 2. Loading: Put the high-purity cadmium selenide polycrystalline material into the bottom of the quartz tube, and use platinum wir...

specific Embodiment approach 2

[0029] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in step 1, the raw material of the seed wafer is made into a single wafer with a diameter of 20 mm and a thickness of 5 mm. Others are the same as the first embodiment.

specific Embodiment approach 3

[0030] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: in step 1, the surface is optically polished to a surface roughness ≤ 8nm. Others are the same as those in Embodiment 1 or 2.

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Abstract

The invention relates to a monocrystalline gas-phase growth method for cadmium selenide with seed crystal heat conduction at top. The method solves the problems of complex equipment and easy blast ofa high-pressure bridgman method of the current grown CdSe crystal, and uncontrollable crystal direction and poor optical quality of a temperature gradient melt zone melting method and a gas-phase czochralski method. The monocrystalline gas-phase growth method comprises the following steps: 1) preparing seed crystal sheets; 2) charging to obtain a charging sealed quartz tube; 3) performing crystalgrowth: 1 activating and 2 growing; and 4) performing post-treatment, and obtaining the cadmium selenide monocrystal on the surface of the seed crystal sheet. The method has the advantage that transmittance of a middle and far-infrared wave band can reach more than 65%. The method is used for cadmium selenide monocrystalline gas-phase growth.

Description

technical field [0001] The invention relates to a cadmium selenide single crystal vapor phase growth method. Background technique [0002] Cadmium selenide is a Ⅱ-Ⅵ compound with a large band gap (Eg=117eV). Cadmium selenide single crystal has excellent optical properties in the middle and far infrared bands: large nonlinear coefficient (18pm / V), wide light transmission band (0.75-25μm), and high laser damage threshold (60MW / cm 2 ) and other advantages, it is very suitable for 8-12 μm far-wave high-power pumping, and is often used in laser detectors, various semiconductor light-emitting elements and mid-to-far infrared nonlinear optical devices. However, due to the high melting point (1250°C) of cadmium selenide, the poor thermal conductivity of crystals, and the large heat release of crystallization, it is difficult to obtain large-sized and high-quality cadmium selenide single crystals. At present, the melt growth method mainly used requires high temperature and high pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B23/00C30B27/00
CPCC30B23/00C30B27/00C30B29/48
Inventor 宋梁成朱崇强雷作涛杨春晖赵丹洋
Owner 黑龙江省工研院资产经营管理有限公司