GaN power diode device with vertical structure and manufacturing method thereof

A technology of power diodes and manufacturing methods, which is applied in the direction of diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as difficult output current, complex flip-chip welding technology, and current congestion, so as to improve forward output current and Reverse blocking voltage, avoiding semiconductor material damage, and improving the effect of output current
CN108198758BActive Publication Date: 2020-11-20INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2020-11-20

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Abstract

The invention provides a fabrication method of a perpendicular-structure GaN power diode device. The fabrication method comprises the steps of 1, providing a substrate and an epitaxial layer on the substrate; 2, patterning a surface of the epitaxial layer, and etching grooves; 3, depositing first positive electrode metal on the surface of the epitaxial layer between the grooves; 4, covering the grooves and a surface of the first positive electrode metal with second positive electrode metal; and 5, fabricating a negative electrode on a back surface of the device. By the fabrication method, a forward output current and a reverse blocking voltage of the device can be increased, and the device performance of the GaN power diode is improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride power diode device with a vertical structure and a manufacturing method thereof. Background technique

[0002] Modern technology has continuously put forward higher requirements for the volume, reliability, withstand voltage and power consumption of semiconductor power devices. With the shrinking of the transistor feature size, due to the short channel effect and other physical laws and the limitation of production cost, the mainstream silicon-based materials and CMOS technology are developing to the 10nm process node and it is difficult to continue to improve. Gallium nitride has a wide band gap, high thermal conductivity, strong atomic bonds, good chemical stability, high operating temperature, high breakdown voltage, and strong radiation resistance. It is suitable for optoelectronics, high-temperature and high-power devices and Applications such as hi...

Claims

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