GaN power diode device with vertical structure and manufacturing method thereof

Abstract

The invention provides a fabrication method of a perpendicular-structure GaN power diode device. The fabrication method comprises the steps of 1, providing a substrate and an epitaxial layer on the substrate; 2, patterning a surface of the epitaxial layer, and etching grooves; 3, depositing first positive electrode metal on the surface of the epitaxial layer between the grooves; 4, covering the grooves and a surface of the first positive electrode metal with second positive electrode metal; and 5, fabricating a negative electrode on a back surface of the device. By the fabrication method, a forward output current and a reverse blocking voltage of the device can be increased, and the device performance of the GaN power diode is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride power diode device with a vertical structure and a manufacturing method thereof. Background technique [0002] Modern technology has continuously put forward higher requirements for the volume, reliability, withstand voltage and power consumption of semiconductor power devices. With the shrinking of the transistor feature size, due to the short channel effect and other physical laws and the limitation of production cost, the mainstream silicon-based materials and CMOS technology are developing to the 10nm process node and it is difficult to continue to improve. Gallium nitride has a wide band gap, high thermal conductivity, strong atomic bonds, good chemical stability, high operating temperature, high breakdown voltage, and strong radiation resistance. It is suitable for optoelectronics, high-temperature and high-power devices and Applications such as hi...

AI Technical Summary

Problems solved by technology

High-power gallium nitride-based diodes with a lateral structure using sapphire as the growth substrate have the advantages of large size, low cost, and good CMOS process compatibility, but it is difficult to obtain high output current, low heat dissipation efficiency, and current congestion. Low current density, high production cost, and inevitably suffer from problems such as high voltage current collapse caused by surface states

[0004] In the prior art, in order to solve the heat dissipation problem of high-power gallium nitride-based semiconductor diodes with a lateral structure, flip-chip welding technology has been proposed, but the flip-chip welding technology has complicated processes and high production costs

In addition, the substrate cost of GaN-based diodes with traditional vertical structures is extremely high, and the requirements for substrate lift-off technology are extremely high, which is not easy to realize

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